公开(公告)号：US11152472B2

公开(公告)日：2021-10-19

申请号：US16724494

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao Takahashi ,  Tatsuya Toriyama ,  Masahiro Sugimoto ,  Takashi Shinohe ,  Hideyuki Uehigashi ,  Junji Ohara ,  Fusao Hirose ,  Hideo Matsuki

IPC: H01L29/24 ,  H01L21/02 ,  C23C16/448 ,  H01L23/367 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H02M3/335

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US11107892B2

公开(公告)日：2021-08-31

申请号：US16616780

申请日：2018-04-19

Applicant: SHOWA DENKO K.K. ,  Central Research Institute of Electric Power Industry ,  DENSO CORPORATION

Inventor： Keisuke Fukada ,  Naoto Ishibashi ,  Akira Bando ,  Masahiko Ito ,  Isaho Kamata ,  Hidekazu Tsuchida ,  Kazukuni Hara ,  Masami Naito ,  Hideyuki Uehigashi ,  Hiroaki Fujibayashi ,  Hirofumi Aoki ,  Toshikazu Sugiura ,  Katsumi Suzuki

IPC: H01L29/16 ,  C23C16/42 ,  C30B29/36 ,  H01L21/02

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

公开(公告)号：US09337276B2

公开(公告)日：2016-05-10

申请号：US14420381

申请日：2013-09-12

Applicant: DENSO CORPORATION

Inventor： Hideyuki Uehigashi ,  Masami Naito ,  Tomoo Morino

IPC: H01L29/15 ,  H01L29/16 ,  H01L29/872 ,  H01L29/06 ,  H01L21/265 ,  H01L29/47 ,  H01L29/04

CPC classification number: H01L29/1608 ,  H01L21/265 ,  H01L29/045 ,  H01L29/06 ,  H01L29/0692 ,  H01L29/47 ,  H01L29/872

Abstract: A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier diode, and a plurality of second conductivity type layers. The Schottky barrier diode includes a Schottky electrode and an ohmic electrode. A PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.

Abstract translation: 碳化硅半导体器件包括包括衬底，漂移层，绝缘膜，肖特基势垒二极管和多个第二导电类型层的结势垒肖特基二极管。 肖特基势垒二极管包括肖特基电极和欧姆电极。 PN二极管由多个第二导电类型层和漂移层构成，并且多个第二导电类型层仅在与棒状堆垛层错平行的方向上形成条纹。

公开(公告)号：US11618969B2

公开(公告)日：2023-04-04

申请号：US16349418

申请日：2017-11-14

Applicant: SHOWA DENKO K.K. ,  DENSO CORPORATION

Inventor： Yohei Fujikawa ,  Hideyuki Uehigashi

IPC: C30B29/36 ,  C01B32/956 ,  C30B23/02

Abstract: A SiC single crystal composite includes: a central portion positioned at a center in plan view; and an outer circumferential portion surrounding an outer circumference of the central portion, in which crystal planes of the central portion and the outer circumferential portion are inclined to each other or different from each other, a boundary is present between the central portion and the outer circumferential portion, and a direction of a crystal constituting the central portion and a direction of a crystal constituting the outer circumferential portion are different from each other via the boundary.

公开(公告)号：US11846040B2

公开(公告)日：2023-12-19

申请号：US17123338

申请日：2020-12-16

Applicant: DENSO CORPORATION ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY

Inventor： Yuichiro Tokuda ,  Hideyuki Uehigashi ,  Norihiro Hoshino ,  Hidekazu Tsuchida ,  Isaho Kamata

IPC: C30B29/36 ,  C30B25/20 ,  C01B32/956

CPC classification number: C30B29/36 ,  C30B25/20 ,  C01B32/956

Abstract: A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm−3 or more.

公开(公告)号：US20150206941A1

公开(公告)日：2015-07-23

申请号：US14420381

申请日：2013-09-12

Applicant: DENSO CORPORATION

Inventor： Hideyuki Uehigashi ,  Masami Naito ,  Tomoo Morino

IPC: H01L29/16 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L21/265 ,  H01L29/045 ,  H01L29/06 ,  H01L29/0692 ,  H01L29/47 ,  H01L29/872

Abstract: A silicon carbide semiconductor device includes a junction barrier Schottky diode including a substrate, a drift layer, an insulating film, a Schottky barrier diode, and a plurality of second conductivity type layers. The Schottky barrier diode includes a Schottky electrode and an ohmic electrode. A PN diode is configured by the plurality of second conductivity type layers and the drift layer, and the plurality of second conductivity type layers is formed in stripes only in a direction parallel to a rod-shaped stacking fault.

Abstract translation: 碳化硅半导体器件包括包括衬底，漂移层，绝缘膜，肖特基势垒二极管和多个第二导电类型层的结势垒肖特基二极管。 肖特基势垒二极管包括肖特基电极和欧姆电极。 PN二极管由多个第二导电类型层和漂移层构成，并且多个第二导电类型层仅在与棒状堆垛层错平行的方向上形成条纹。