公开(公告)号：US12129571B2

公开(公告)日：2024-10-29

申请号：US17432087

申请日：2020-06-18

申请人： Mitsubishi Electric Corporation

发明人： Hiroyuki Kinoshita

IPC分类号： C30B29/36 ,  H01L29/16 ,  H01L29/778 ,  H01L29/812

CPC分类号： C30B29/36 ,  H01L29/1608 ,  H01L29/778 ,  H01L29/812

摘要： A silicon carbide single crystal has a positive correlation between a temperature and an electric resistivity in a range from room temperature to 400° C., has an electric resistivity of at least 1×107 Ω·cm in the range from room temperature to 400° C., exhibits electric conduction by holes while no significant electric conduction properties by electrons are observed regarding electric conduction at room temperature, and has a concentration of a transition element of 1×1017/cm3 or less.

公开(公告)号：US11967618B2

公开(公告)日：2024-04-23

申请号：US17832984

申请日：2022-06-06

申请人： FLOSFIA INC.

发明人： Isao Takahashi ,  Takashi Shinohe ,  Rie Tokuda ,  Masaya Oda ,  Toshimi Hitora

IPC分类号： H01L29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/12 ,  H01L29/227 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

CPC分类号： H01L29/227 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02433 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

摘要： A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US11824110B2

公开(公告)日：2023-11-21

申请号：US17297060

申请日：2019-11-19

申请人： Nippon Telegraph and Telephone Corporation

发明人： Hiroki Sugiyama

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/205 ,  H01L29/78 ,  H01L29/812

CPC分类号： H01L29/7786 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7806 ,  H01L29/812

摘要： A buffer layer, an etching stop layer, and a channel layer are epitaxially grown in this order on a substrate. The substrate contains InP that has a high resistance by, for example, being doped with Fe. The buffer layer contains a compound semiconductor lattice-matched to InP. The etching stop layer includes InxAl1-xP (0≤x≤0.75). The channel layer contains InyGa1-y As (0

公开(公告)号：US20230352304A1

公开(公告)日：2023-11-02

申请号：US18135099

申请日：2023-04-14

申请人： SCDevice LLC

发明人： Sudarsan Uppili ,  David Lee Snyder ,  Scott Joseph Alberhasky

IPC分类号： H01L21/265 ,  H01L21/266 ,  H01L21/285 ,  H01L29/812 ,  H01L29/872 ,  H01L29/66

CPC分类号： H01L21/26513 ,  H01L21/266 ,  H01L21/28537 ,  H01L29/8122 ,  H01L29/872 ,  H01L29/66848 ,  H01L29/66143 ,  H01L29/1608

摘要： Semiconductor devices and associated fabrication methods are disclosed. In one disclosed approach a process for forming a semiconductor device is provided. The process includes: implanting a first region of semiconductor material using a first channeled implant with a first conductivity type; and implanting, after the first channeled implant, a second region of semiconductor material using a second channeled implant with a second conductivity type. The first channeled implant disrupts a crystal structure of the first region of semiconductor material and does not disrupt a crystal structure of the second region of semiconductor material.

公开(公告)号：US11682702B2

公开(公告)日：2023-06-20

申请号：US17114194

申请日：2020-12-07

申请人： FLOSFIA INC.

发明人： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC分类号： H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/772 ,  H01L29/808 ,  H01L29/78 ,  H01L29/872 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/812 ,  H01L33/44 ,  H01L33/26 ,  H01L33/00

CPC分类号： H01L29/24 ,  H01L21/0242 ,  H01L21/0262 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/739 ,  H01L29/7395 ,  H01L29/778 ,  H01L29/7722 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/872 ,  H01L29/8725 ,  H01L33/005 ,  H01L33/26 ,  H01L33/44

摘要： A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US11563092B2

公开(公告)日：2023-01-24

申请号：US16608556

申请日：2018-04-26

申请人： NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY ,  TAMURA CORPORATION ,  NOVEL CRYSTAL TECHNOLOGY, INC.

发明人： Masataka Higashiwaki ,  Yoshiaki Nakata ,  Takafumi Kamimura ,  Man Hoi Wong ,  Kohei Sasaki ,  Daiki Wakimoto

IPC分类号： H01L29/10 ,  H01L29/24 ,  H01L29/06 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872

摘要： A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.

公开(公告)号：US20220393653A1

公开(公告)日：2022-12-08

申请号：US17820497

申请日：2022-08-17

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, JR. ,  Hongxiao Shao ,  Tin Myint Ko ,  Matthew Thomas Ozalas ,  Hong Shen ,  Mehran Janani ,  Jens Albrecht Riege ,  Hsiang-Chih Sun ,  David Steven Ripley ,  Philip John Lehtola

IPC分类号： H03F3/213 ,  H03F3/19 ,  H03F1/02 ,  H03F3/21 ,  H03F3/195 ,  H01L23/00 ,  H01L21/768 ,  H03F3/24 ,  H01L23/552 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L21/8252 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H01L23/66 ,  H01L29/20 ,  H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/66 ,  H01L23/31 ,  H01L23/522

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US11469312B2

公开(公告)日：2022-10-11

申请号：US16841167

申请日：2020-04-06

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Mohammed T. Quddus ,  Mihir Mudholkar ,  Ali Salih

IPC分类号： H01L29/66 ,  H01L29/872 ,  H01L21/762 ,  H01L29/812 ,  H01L29/423

摘要： A semiconductor device structure comprises a region of semiconductor material comprising a first conductivity type, a first major surface, and a second major surface opposite to the first major surface. A first trench gate structure includes a first trench extending from the first major surface into the region of semiconductor material, a first dielectric structure is over sidewall surfaces and a portion of a lower surface of the first trench, wherein the first dielectric structure comprises a first opening adjacent to the lower surface of the first trench, a first recessed contact extends through the first opening, and a first contact region is over the first recessed contact within the first trench, wherein the first recessed contact and the first contact region comprise different materials. A first doped region comprising a second dopant conductivity type opposite to the first conductivity type is in the region of semiconductor material and is spaced apart from the first major surface and below the first trench. A gate contact region is in the region of semiconductor material and is electrically connected to the first doped region.

公开(公告)号：US20220199820A1

公开(公告)日：2022-06-23

申请号：US17605442

申请日：2020-03-06

申请人： ROHM CO., LTD.

发明人： Hirotaka OTAKE ,  Kentaro CHIKAMATSU ,  Minoru AKUTSU ,  Shinya TAKADO

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/812

摘要： A nitride semiconductor device 1 includes a first nitride semiconductor layer that constitutes an electron transit layer, a second nitride semiconductor layer that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer, a gate portion that is formed on the second nitride semiconductor layer, and a source electrode and a drain electrode that, on the second nitride semiconductor layer, are opposingly disposed across the gate portion. The gate portion includes a third nitride semiconductor layer of a ridge shape that is formed on the second nitride semiconductor layer and contains an acceptor type impurity and a gate electrode that is formed on the third nitride semiconductor layer. A film thickness of the third nitride semiconductor layer is greater than 100 nm.

公开(公告)号：US20220029009A1

公开(公告)日：2022-01-27

申请号：US17297060

申请日：2019-11-19

申请人： Nippon Telegraph and Telephone Corporation

发明人： Hiroki Sugiyama

IPC分类号： H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/66 ,  H01L29/205

摘要： A buffer layer, an etching stop layer, and a channel layer are epitaxially grown in this order on a substrate. The substrate contains InP that has a high resistance by, for example, being doped with Fe. The buffer layer contains a compound semiconductor lattice-matched to InP. The etching stop layer includes InxAl1-xP (0≤x≤0.75). The channel layer contains InyGa1-y As (0