公开(公告)号：US12119173B2

公开(公告)日：2024-10-15

申请号：US17607599

申请日：2019-04-29

Applicant: Applied Materials, Inc.

Inventor： Henning Aust ,  Timo Adler ,  Clemens Pihan

IPC: H01F7/02 ,  C23C14/50 ,  C23C14/56 ,  C23C16/458 ,  C23C16/54 ,  H01L21/677

CPC classification number: H01F7/0236 ,  C23C14/50 ,  C23C14/568 ,  C23C16/4587 ,  C23C16/54 ,  H01L21/67709 ,  H01L21/6776

Abstract: A magnetic levitation system for transporting a carrier is described. The magnetic levitation system includes a base defining a transportation track, a carrier movable relative to the base along the transportation track, and a plurality of active magnetic bearings provided at the base and configured to face a guided structure of the carrier. The guided structure includes a first guided zone and a second guided zone configured to interact with the plurality of active magnetic bearings and a recessed zone. The recessed zone is arranged between the first guided zone and the second guided zone in a transport direction of the carrier and is recessed with respect to the first guided zone and the second guided zone.

公开(公告)号：US20240249923A1

公开(公告)日：2024-07-25

申请号：US18624655

申请日：2024-04-02

Applicant: Kokusai Electric Corporation

Inventor： Akihiro SATO ,  Tsuyoshi Takeda ,  Yukitomo Hirochi

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01L21/02 ,  H05H1/46

CPC classification number: H01J37/32568 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H05H1/46 ,  H01J2237/327 ,  H01J2237/3323 ,  H01L21/02211 ,  H01L21/0228

Abstract: There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

公开(公告)号：US11948826B2

公开(公告)日：2024-04-02

申请号：US17985764

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Jaeyong Cho ,  Vijay D. Parkhe ,  Haitao Wang ,  Kartik Ramaswamy ,  Chunlei Zhang

IPC: H01L21/683 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01L21/6833 ,  C23C16/4586 ,  C23C16/4587 ,  C23C16/466 ,  C23C16/505 ,  H01J37/32697 ,  H01J37/32724

Abstract: An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

公开(公告)号：US11869785B2

公开(公告)日：2024-01-09

申请号：US17576549

申请日：2022-01-14

Applicant: Kokusai Electric Corporation

Inventor： Tomoyuki Miyada ,  Hajime Abiko ,  Junichi Kawasaki ,  Tadashi Okazaki

IPC: H01L21/67 ,  C23C8/10 ,  C23C16/458 ,  H01L21/673 ,  H01L21/677 ,  H01L21/66

CPC classification number: H01L21/67288 ,  C23C8/10 ,  C23C16/4587 ,  H01L21/67259 ,  H01L21/67303 ,  H01L21/67778 ,  H01L22/12

Abstract: Described herein is a technique capable of detecting a substrate state without contacting the substrate. According to one aspect of the technique, there is provided (a) loading a substrate retainer, where a plurality of substrates is placed, into a reaction tube; (b) processing the plurality of the substrates by supplying a gas into the reaction tube; (c) unloading the substrate retainer out of the reaction tube after the plurality of the substrates is processed; and (d) detecting the plurality of the substrates placed on the substrate retainer after the substrate retainer is rotated by a first angle with respect to a transferable position, wherein the plurality of the substrates is transferable to/from the substrate retainer in the transferable position.

公开(公告)号：US20230374698A1

公开(公告)日：2023-11-23

申请号：US18361951

申请日：2023-07-31

Applicant: ROHM CO., LTD.

Inventor： Makoto TAKAMURA ,  Takuji MAEKAWA ,  Mitsuru MORIMOTO ,  Noriyuki MASAGO ,  Takayasu OKA

IPC: C30B25/12 ,  H01L21/02 ,  C30B25/10 ,  C30B25/20 ,  C30B29/36 ,  C30B25/14 ,  C23C16/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC classification number: C30B25/12 ,  H01L21/02529 ,  H01L21/02378 ,  H01L21/02634 ,  C30B25/10 ,  C30B25/20 ,  C30B29/36 ,  C30B25/14 ,  C23C16/325 ,  C23C16/4587 ,  C23C16/46 ,  C23C16/45502

Abstract: A fabricating apparatus (2) of an sic epitaxial wafer disclosed herein includes: a growth furnace (100A); a gas mixing preliminary chamber (107) disposed outside the growth furnace and configured to mix carrier gas and/or material gas and to regulate a pressure thereof; a wafer boat (210) configured so that a plurality of SiC wafer pairs (200WP), in which two substrates each having an SiC single crystal in contact with each other in a back-to-back manner, are disposed at equal intervals with a gap therebetween; and a heating unit (101) configured to heat the wafer boat disposed in the growth furnace to an epitaxial growth temperature. The carrier gas and/or the material gas are introduced into the growth furnace after preliminarily being mixed and pressure-regulated in the gas mixing preliminary chamber (107) to grow an SiC layer on a surface of each of the plurality of SiC wafer pairs.

公开(公告)号：US20190214302A1

公开(公告)日：2019-07-11

申请号：US16335911

申请日：2017-08-24

Applicant: NexWafe GmbH

Inventor： Stefan Reber ,  Kai Schillinger

IPC: H01L21/78 ,  C23C16/458 ,  H01L21/02 ,  C25F3/12

CPC classification number: H01L21/7806 ,  C23C16/4587 ,  C25F3/12 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02658 ,  H01L31/1892 ,  Y02E10/50

Abstract: A method for arranging a plurality of semiconductor seed substrates on a carrier element, in which for applying a semiconductor layer to the seed substrates, the seed substrates are arranged on the carrier element by integral bonding. A carrier element having integrally bonded seed substrates for coating with a semiconductor layer is also provided.

公开(公告)号：US20180274092A1

公开(公告)日：2018-09-27

申请号：US15695929

申请日：2017-09-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Masayuki KITAMURA ,  Atsuko SAKATA ,  Satoshi WAKATSUKI

IPC: C23C16/44 ,  H01L21/285 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  C30B29/06

CPC classification number: C23C16/4401 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45565 ,  C23C16/4587 ,  C30B29/06 ,  H01L21/205 ,  H01L21/28556 ,  H01L21/76877

Abstract: A semiconductor manufacturing apparatus includes a reaction chamber configured to perform a process on a semiconductor substrate using a gas mixture comprising a first gas, and a first path configured to exhaust resultant gas that comprises the first gas from the reaction chamber. The semiconductor manufacturing apparatus further includes a first trap provided in the first path and configured to extract at least a portion of the first gas from the resultant gas, and a second path in which the trap is not provided and configured to exhaust the resultant gas from the reaction chamber.

公开(公告)号：US20180245217A1

公开(公告)日：2018-08-30

申请号：US15901145

申请日：2018-02-21

Applicant: Ascentool, Inc.

Inventor： George Xinsheng Guo

IPC: C23C16/458 ,  C23C16/04 ,  C23C16/46 ,  C23C16/513

CPC classification number: C23C16/4587 ,  C23C14/044 ,  C23C14/352 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45563 ,  C23C16/46 ,  C23C16/50 ,  C23C16/513 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/345

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

公开(公告)号：US20160208380A1

公开(公告)日：2016-07-21

申请号：US14988582

申请日：2016-01-05

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Suhail ANWAR ,  Jozef KUDELA ,  Carl A. SORENSEN ,  Tae Kyung WON ,  Seon-Mee CHO ,  Soo Young CHOI ,  Beom Soo Park ,  Benjamin M. JOHNSTON

IPC: C23C16/455 ,  C23C16/513

CPC classification number: C23C16/455 ,  C23C16/45578 ,  C23C16/4587 ,  C23C16/511 ,  C23C16/513 ,  C23C16/54

Abstract: An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.

公开(公告)号：US20160196997A1

公开(公告)日：2016-07-07

申请号：US14916019

申请日：2014-09-18

Applicant: Applied Materials, Inc.

Inventor： John M. WHITE ,  Zuoqian WANG

IPC: H01L21/683 ,  H01L21/67 ,  H05B3/03 ,  C23C16/458 ,  F26B3/00 ,  F27B1/08 ,  H01L21/673 ,  C23C14/50

CPC classification number: H01L21/6833 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/50 ,  C23C14/541 ,  C23C14/562 ,  C23C16/042 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45578 ,  C23C16/4587 ,  C23C16/463 ,  C23C16/545 ,  F26B3/00 ,  F27B1/08 ,  H01L21/67109 ,  H01L21/6732 ,  H01L21/67706 ,  H01L21/67712 ,  H01L21/67718 ,  H01L21/67742 ,  H05B3/03

Abstract: A substrate carrier adapted to use in a processing system includes an electrode assembly and a support base. The electrode assembly is configured to generate an electrostatic chucking force for securing a substrate to the substrate carrier. The support base has a heating/cooling reservoir formed therein. The electrode assembly and the support base form an unitary body configured for transport within a processing system. A quick disconnect is coupled to the body and configured to trap a heat regulating medium in the reservoir heating/cooling reservoir when the body is decoupled from a source of heat regulating medium.

Abstract translation: 适于在处理系统中使用的基板载体包括电极组件和支撑基座。 电极组件被配置为产生用于将衬底固定到衬底载体的静电吸附力。 支撑基座上形成有加热/冷却储存器。 电极组件和支撑基座形成整体，其构造成用于在处理系统内运输。 快速断开连接到主体并且构造成当身体与热调节介质源解耦时，将热调节介质捕获在储存器加热/冷却储存器中。