公开(公告)号：US12077848B2

公开(公告)日：2024-09-03

申请号：US17659018

申请日：2022-04-13

Applicant: Tokyo Electron Limited

Inventor： Kanto Nakamura ,  Hiroyuki Yokohara ,  Yuki Motomura

IPC: H01J37/34 ,  C23C14/34 ,  C23C16/44 ,  H01J37/32

CPC classification number: C23C14/3464 ,  C23C16/4412 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/3447

Abstract: A vacuum processing apparatus includes: a stage on which a substrate is placed; and a shutter configured to be able to move between a shielding position at which the stage is covered and a retracted position that is retracted from the shielding position, wherein the shutter arranged at the shielding position forms a processing space between the shutter and the stage, and includes: a gas supplier configured to supply a gas into the processing space; and a gas exhauster provided closer to a center side of the processing space than the gas supplier and configured to exhaust the gas from the processing space.

公开(公告)号：US12014911B2

公开(公告)日：2024-06-18

申请号：US17206738

申请日：2021-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota Ishibashi ,  Tatsuo Hirasawa ,  Hiroyuki Toshima ,  Hiroyuki Iwashita

IPC: H01J37/34 ,  C23C14/04 ,  C23C14/34

CPC classification number: H01J37/3447 ,  C23C14/044 ,  C23C14/3464 ,  H01J37/3417 ,  H01J2237/0458

Abstract: An example of a sputtering apparatus comprises a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, a shielding plate disposed between the first and the second target and the substrate and having a through-hole through which the sputter particles pass, and an obstructing mechanism. The through-hole has a first opening region through which the sputter particles emitted from the fit target pass and a second opening region through which the sputter particles emitted from the second target pass, and the obstructing mechanism is configured to obstruct the sputter particles emitted from the first target in passing through the second opening region and the sputter particles emitted in the second target from passing through the first opening region.

公开(公告)号：US20240177979A1

公开(公告)日：2024-05-30

申请号：US18285042

申请日：2022-03-21

Applicant: INFICON AG

Inventor： Astrid WALDNER ,  Bernhard ANDREAUS ,  Urs WÄLCHLI ,  Stefan KAISER

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32981 ,  H01J37/32018 ,  H01J37/32211 ,  H01J37/3244 ,  H01J37/32825 ,  H01J37/32972 ,  H01J37/3447

Abstract: The present invention relates to a device for plasma generation in a wide pressure range. The device comprises a first plasma source (1) in a first discharge chamber (2) in order to generate a first plasma in a low-pressure range, a second plasma source (3) in a second discharge chamber (4) in order to generate a second plasma in a high-pressure range, a first coupling element (5) for coupling the device to a system, in order to guide gas out of the system, and a second coupling element (6) for coupling the device to an optical sensor (12). The first discharge chamber (2) has a first optical connection with at least one optical lens (7, 8) to the second coupling element (6) and the second discharge chamber (4) has a second optical connection with at least one optical lens (8) to the second coupling element (6). This invention further relates to a system for optical gas analysis or gas detection and corresponding methods for plasma generation and for operating the system.

公开(公告)号：US11898238B2

公开(公告)日：2024-02-13

申请号：US17494017

申请日：2021-10-05

Applicant: SKY TECH INC.

Inventor： Jing-Cheng Lin ,  Yu-Te Shen

IPC: H01J37/34 ,  C23C14/56 ,  C23C14/02

CPC classification number: C23C14/564 ,  C23C14/021 ,  H01J37/3441 ,  H01J37/3447

Abstract: The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-shield member, a second-shield member and a driver. The first-shield member has a first-inner-edge surface disposed with a protrusion. The second-shield member has a second-inner-edge surface disposed with a cavity. The driver interconnects and drives the first-shield member and the second-shield member to sway in opposite directions. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

公开(公告)号：US20240021421A1

公开(公告)日：2024-01-18

申请号：US18346967

申请日：2023-07-05

Applicant: Ascentool, Inc.

Inventor： George Xinsheng Guo

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3405 ,  H01J37/3455 ,  H01J37/32669 ,  H01J37/3452 ,  H01J37/3447 ,  H01J37/3461

Abstract: A plasma deposition apparatus includes a first plasma source that can produce a plasma confined in a magnetic field. The first plasma source includes a closed-loop electrode defining a center region therein and a central axis through the central region, and one or more magnets that are outside an inner surface of the closed-loop electrode. The magnets can produce a magnetic field in the center region. The one or more magnets can be at least partially embedded in the closed-loop electrode. The closed-loop electrode and the magnets can produce a plasma of ions to sputter atoms off a sputtering target or a backing plate.

公开(公告)号：US11827968B2

公开(公告)日：2023-11-28

申请号：US17418829

申请日：2019-12-18

Applicant: Volframi Oy Ltd

Inventor： Jukka Vuoristo

IPC: C23C14/34 ,  C23C14/04 ,  C23C14/54 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/042 ,  C23C14/34 ,  C23C14/541 ,  C23C14/56 ,  H01J37/32513 ,  H01J37/32724 ,  H01J37/32899 ,  H01J37/3447

Abstract: The disclosure relates to an apparatus for forming patterns on a surface of a substrate plate by a sputtering process, and the apparatus comprises a first vacuum chamber, a sputtering source inside the first vacuum chamber, and an arrangement to place a mask between the sputtering source and the surface of the substrate plate. The disclosure also relates to a method for forming patterns on a surface of a substrate plate by a sputtering process.

公开(公告)号：US20230374654A1

公开(公告)日：2023-11-23

申请号：US18230669

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hsi Wang ,  Yen-Yu Chen ,  Jen-Hao Chien

IPC: C23C14/54 ,  G01N23/2273 ,  C23C14/06 ,  C23C14/34 ,  C23C14/52 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/548 ,  G01N23/2273 ,  C23C14/067 ,  C23C14/3492 ,  C23C14/52 ,  C23C14/352 ,  C23C14/3407 ,  H01J37/3429 ,  H01J37/3447 ,  H01J37/345 ,  G01N2223/6116 ,  H01J37/3435 ,  H10N50/10

Abstract: A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.

公开(公告)号：US11823879B2

公开(公告)日：2023-11-21

申请号：US17573368

申请日：2022-01-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Tetsuya Miyashita ,  Naoki Watanabe

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3429 ,  C23C14/3464 ,  H01J37/3435 ,  H01J37/3441 ,  H01J37/3447 ,  H01J2237/332

Abstract: There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.

公开(公告)号：US11810770B2

公开(公告)日：2023-11-07

申请号：US17490840

申请日：2021-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  C23C14/54

CPC classification number: H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/345 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20230260770A1

公开(公告)日：2023-08-17

申请号：US17651272

申请日：2022-02-16

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chia-Hung TSAI ,  Chin-Szu LEE ,  Szu-Hua WU ,  Jui-Hung HO ,  Chi-Hung LIAO ,  Yu-Jen CHIEN

IPC: H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  C23C14/35 ,  C23C14/54 ,  H05K9/00

CPC classification number: H01J37/3488 ,  H01L21/2855 ,  H01L21/76879 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3476 ,  H05K9/0088 ,  H01L23/53238

Abstract: A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.