公开(公告)号：US11495446B2

公开(公告)日：2022-11-08

申请号：US17050093

申请日：2019-03-20

Applicant: Tokyo Electron Limited

Inventor： Masato Shinada ,  Hiroyuki Toshima ,  Einstein Noel Abarra

IPC: H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  H01L21/02 ,  H01L21/285

Abstract: A film formation device includes a target holder configured to hold a target for emitting sputtering particles in a processing space inside a processing chamber, a sputtering particle emitting part configured to emit the sputtering particles from the target, a sputtering particle shielding plate having a passage hole through which the emitted sputtering particles pass, a shielding member provided to shield the passage hole, a movement mechanism configured to move the shielding member in the horizontal direction, and a controller. The controller controls the shielding member, which has the placement portion on which a substrate is placed, to be moved in one direction of the horizontal direction, and controls the sputtering particles to be emitted from the target. The sputtering particles passed through the passage hole are deposited on the substrate.

公开(公告)号：US20220081757A1

公开(公告)日：2022-03-17

申请号：US17469250

申请日：2021-09-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Naoki Watanabe ,  Tetsuya Miyashita ,  Hiroyuki Toshima ,  Einstein Noel Abarra ,  Shota Ishibashi

IPC: C23C14/34 ,  C23C14/54

Abstract: A film forming apparatus is provided. The apparatus comprises a processing chamber accommodating a plurality of substrates; a plurality of substrate supporting units disposed in the processing chamber and configured to place the substrates thereon; a substrate moving mechanism configured to linearly move the substrate supporting units in a first direction; sputter particle emitting units, each having a target for emitting sputter particles into the processing chamber; and a controller configured to control the sputter particle emitting units and the substrate moving mechanism. The controller controls the substrate moving mechanism to linearly move the substrate supporting units on which the substrates are placed in the first direction and controls the sputter particle emitting units to emit sputter particles to be deposited on the substrates.

公开(公告)号：US11664207B2

公开(公告)日：2023-05-30

申请号：US16531782

申请日：2019-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Hiroyuki Toshima

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/50 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01J37/3417 ,  C23C14/34 ,  C23C14/505 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/3447 ,  H01J2237/026 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/332 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742

Abstract: A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

公开(公告)号：US11512388B2

公开(公告)日：2022-11-29

申请号：US16534116

申请日：2019-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Hiroyuki Toshima

IPC: C23C14/34 ,  H01L21/67 ,  H01J37/34 ,  H01L21/02

Abstract: There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.

公开(公告)号：US11939665B2

公开(公告)日：2024-03-26

申请号：US17184089

申请日：2021-02-24

Applicant: Tokyo Electron Limited

Inventor： Masato Shinada ,  Tamaki Takeyama ,  Kazunaga Ono ,  Naoyuki Suzuki ,  Hiroaki Chihaya ,  Einstein Noel Abarra

IPC: C23C14/54 ,  G01B11/06 ,  G01S7/481 ,  G01S17/08 ,  H01F41/32 ,  H01L21/66 ,  H10N50/01

CPC classification number: C23C14/547 ,  G01B11/0625 ,  G01S7/4814 ,  G01S17/08 ,  H01F41/32 ,  H01L22/12 ,  H10N50/01

Abstract: A film thickness measurement apparatus includes: a stage that places a substrate having a film formed thereon and measures a thickness of the film in-situ in a film forming apparatus; a film thickness meter including a light emitter that emits light toward the substrate disposed on the stage and a light receiving sensor that receives the light reflected by the substrate for measuring the thickness of the film in-situ; a moving mechanism including a multi-joint arm that moves an irradiation point of the light on the substrate; a distance meter that measures a distance between the light receiving sensor and the irradiation point on the substrate; and a distance adjustor that adjusts the distance between the light receiving sensor and the irradiation point on the substrate.

公开(公告)号：US11851750B2

公开(公告)日：2023-12-26

申请号：US17384058

申请日：2021-07-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Einstein Noel Abarra ,  Hiroyuki Toshima ,  Shota Ishibashi

IPC: C23C14/35 ,  C23C14/04 ,  H01J37/34 ,  G02B27/30

CPC classification number: C23C14/354 ,  C23C14/04 ,  H01J37/3447 ,  G02B27/30

Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.

公开(公告)号：US11742190B2

公开(公告)日：2023-08-29

申请号：US17388638

申请日：2021-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Einstein Noel Abarra ,  Hiroyuki Toshima ,  Shota Ishibashi ,  Hiroyuki Iwashita ,  Tatsuo Hirasawa ,  Masato Shinada

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/35

CPC classification number: H01J37/3447 ,  C23C14/3464 ,  C23C14/35 ,  H01J37/32715 ,  H01J37/3417

Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.

公开(公告)号：US11542592B2

公开(公告)日：2023-01-03

申请号：US16246285

申请日：2019-01-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Naoki Watanabe ,  Tetsuya Miyashita ,  Hiroaki Chihaya

IPC: C23C14/22 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

Abstract: A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.

公开(公告)号：US12002667B2

公开(公告)日：2024-06-04

申请号：US17556025

申请日：2021-12-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Tetsuya Miyashita ,  Einstein Noel Abarra

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32

CPC classification number: H01J37/3441 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32715

Abstract: There is provided a sputtering apparatus comprising: a target from which sputtered particles are emitted; a substrate support configured to support a substrate; a substrate moving mechanism configured to move the substrate in one direction; and a shielding member disposed between the target and the substrate support and having an opening through which the sputtered particles pass. The shielding member includes a first shielding member and a second shielding member disposed in a vertical direction.

公开(公告)号：US20240120182A1

公开(公告)日：2024-04-11

申请号：US18477047

申请日：2023-09-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke KIKUCHI ,  Masato Shinada

IPC: H01J37/32 ,  C23C14/35 ,  C23C14/50

CPC classification number: H01J37/32724 ,  C23C14/352 ,  C23C14/50 ,  H01J37/345 ,  H01J2237/002 ,  H01J2237/2007 ,  H01J2237/332

Abstract: There is a placing table comprising: an electrostatic chuck having a chuck electrode, wherein the electrostatic chuck is configured to attract and hold a substrate on a placing surface and to be rotatable; a freezing device having a contact surface in contact with or separated from a surface of the electrostatic chuck opposite to the placing surface and configured to cool the electrostatic chuck; and a power controller configured to superimpose a radio frequency (RF) bias voltage applied to the electrostatic chuck on a chuck voltage applied to the chuck electrode.