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公开(公告)号：US11542592B2
公开(公告)日：2023-01-03
申请号：US16246285
申请日：2019-01-11
摘要： A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.
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2.发明申请公开(公告)号：US20220415634A1
公开(公告)日：2022-12-29
申请号：US17843076
申请日：2022-06-17
发明人： Kenichi Imakita , Hiroaki Chihaya , Toru Kitada , Atsushi Gomi
摘要： A film forming apparatus for forming a film by magnetron sputtering includes a substrate support supporting the substrate, a holder holding a target for emitting sputtered particles, a magnet unit having a magnet, first and second movement mechanisms configured to periodically move the substrate support and the magnet unit, respectively, and a controller. The controller is configured to control the first movement mechanism and the second movement mechanism so that a phase in a periodic movement of the substrate support remains the same at a start of film formation and at an end of film formation, a phase in a periodic movement of the magnet unit remains the same at a start of film formation and at an end of film formation, and the phase in the periodic movement of the substrate support and the phase in the periodic movement of the magnet unit do not match during film formation.
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公开(公告)号：US11939665B2
公开(公告)日：2024-03-26
申请号：US17184089
申请日：2021-02-24
发明人： Masato Shinada , Tamaki Takeyama , Kazunaga Ono , Naoyuki Suzuki , Hiroaki Chihaya , Einstein Noel Abarra
CPC分类号： C23C14/547 , G01B11/0625 , G01S7/4814 , G01S17/08 , H01F41/32 , H01L22/12 , H10N50/01
摘要： A film thickness measurement apparatus includes: a stage that places a substrate having a film formed thereon and measures a thickness of the film in-situ in a film forming apparatus; a film thickness meter including a light emitter that emits light toward the substrate disposed on the stage and a light receiving sensor that receives the light reflected by the substrate for measuring the thickness of the film in-situ; a moving mechanism including a multi-joint arm that moves an irradiation point of the light on the substrate; a distance meter that measures a distance between the light receiving sensor and the irradiation point on the substrate; and a distance adjustor that adjusts the distance between the light receiving sensor and the irradiation point on the substrate.
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4.发明授权公开(公告)号：US11715671B2
公开(公告)日：2023-08-01
申请号：US17021846
申请日：2020-09-15
IPC分类号： H01L21/66 , G01R33/032 , G01N27/72 , C23C14/56 , H10N50/01
CPC分类号： H01L22/14 , C23C14/566 , G01N27/72 , G01R33/032 , H10N50/01
摘要： A film forming system for forming a magnetic film is provided. The film forming system includes a processing module configured to form the magnetic film on a substrate, a magnetization characteristic measuring device configured to measure magnetization characteristics of the magnetic film formed on the substrate in the processing module, and a transfer unit configured to transfer the substrate between the processing module and the magnetization characteristic measuring device. The magnetization characteristic measuring device includes a magnetic field applying mechanism having a permanent magnet magnetic circuit configured to apply a magnetic field to the substrate and adjust the magnetic field to be applied to the substrate, and a detector configured to detect magnetization characteristics of the substrate.
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公开(公告)号：US10748750B2
公开(公告)日：2020-08-18
申请号：US16208391
申请日：2018-12-03
发明人： Hiroaki Chihaya , Hiroshi Sone
摘要： A substrate processing apparatus includes a supporting table having a mounting region for a substrate. A rotation shaft supporting a shutter extends in a vertical direction. The shutter is moved between a first region above the supporting table and a second region by rotating the rotation shaft about its central axis. The shutter includes a pipe having gas output holes. When the shutter is disposed in the first region, the gas output holes are located outside the mounting region in a rotation direction from the second region toward the first region. The minimum distance between the central axis and the gas output holes is smaller than or equal to the minimum distance between the central axis and the mounting region. The maximum distance between the central axis and the gas output holes is greater than equal to the maximum distance between the central axis and the mounting region.
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