- 专利标题: Film forming system and method for forming film on substrate
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申请号: US16246285申请日: 2019-01-11
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公开(公告)号: US11542592B2公开(公告)日: 2023-01-03
- 发明人: Masato Shinada , Naoki Watanabe , Tetsuya Miyashita , Hiroaki Chihaya
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Fenwick & West LLP
- 优先权: JPJP2018-022894 20180213
- 主分类号: C23C14/22
- IPC分类号: C23C14/22 ; C23C14/35 ; C23C14/50 ; H01J37/34
摘要:
A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.
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