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公开(公告)号：US11551918B2
公开(公告)日：2023-01-10
申请号：US16883543
申请日：2020-05-26
摘要： A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.
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公开(公告)号：US20240363410A1
公开(公告)日：2024-10-31
申请号：US18620326
申请日：2024-03-28
发明人： Ryota Yonezawa , Kai-Hung Yu , Yuji Otsuki , Kenichi Imakita , Atsushi Gomi , Kohichi Satoh , Tadahiro Ishizaka , Takashi Sakuma , Hidenao Suzuki
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , H01L21/76804 , H01L21/76805
摘要： A method for forming a semiconductor device can include providing a substrate including a via in a dielectric layer, forming a ruthenium metal plug in the via, and at least part of the ruthenium metal plug can be formed directly on the dielectric layer in the via, forming a metal cap layer directly on the ruthenium metal plug, and forming a metallization layer, such as a copper-containing trench, over the ruthenium metal plug, such that the metal cap layer is between the metallization layer and the ruthenium metal plug, which can prevent intermixing of the ruthenium of the ruthenium metal plug with the metal or metals in the metallization layer.
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3.发明申请公开(公告)号：US20220415634A1
公开(公告)日：2022-12-29
申请号：US17843076
申请日：2022-06-17
发明人： Kenichi Imakita , Hiroaki Chihaya , Toru Kitada , Atsushi Gomi
摘要： A film forming apparatus for forming a film by magnetron sputtering includes a substrate support supporting the substrate, a holder holding a target for emitting sputtered particles, a magnet unit having a magnet, first and second movement mechanisms configured to periodically move the substrate support and the magnet unit, respectively, and a controller. The controller is configured to control the first movement mechanism and the second movement mechanism so that a phase in a periodic movement of the substrate support remains the same at a start of film formation and at an end of film formation, a phase in a periodic movement of the magnet unit remains the same at a start of film formation and at an end of film formation, and the phase in the periodic movement of the substrate support and the phase in the periodic movement of the magnet unit do not match during film formation.
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4.发明申请公开(公告)号：US20170117460A1
公开(公告)日：2017-04-27
申请号：US15297467
申请日：2016-10-19
发明人： Kenichi Imakita
摘要： Manufacturing a magnetoresistive element excellent in RA and MR ratio is enabled. A method of manufacturing a magnetoresistive element of an embodiment includes forming a first laminate constituting a lower electrode on a base substrate, forming a second laminate which is a magnetoresistive effect laminate on the first laminate, and forming an upper electrode on the second laminate. The step of forming a first laminate includes forming a metal layer on the base substrate, forming a conductive amorphous layer on the metal layer, and performing ion etching on the conductive amorphous layer.
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