公开(公告)号：US11532497B2

公开(公告)日：2022-12-20

申请号：US15383035

申请日：2016-12-19

申请人： APPLIED MATERIALS, INC.

发明人： Jaeyong Cho ,  Vijay D. Parkhe ,  Haitao Wang ,  Kartik Ramaswamy ,  Chunlei Zhang

IPC分类号： H01L21/683 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  C23C16/46

摘要： An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

公开(公告)号：US11164723B2

公开(公告)日：2021-11-02

申请号：US17151349

申请日：2021-01-18

申请人： APPLIED MATERIALS, INC.

发明人： Daisuke Shimizu ,  Taiki Hatakeyama ,  Sean S. Kang ,  Katsumasa Kawasaki ,  Chunlei Zhang

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/311

摘要： Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US11127619B2

公开(公告)日：2021-09-21

申请号：US15364973

申请日：2016-11-30

申请人： APPLIED MATERIALS, INC.

发明人： Kartik Ramaswamy ,  Chunlei Zhang ,  Haitao Wang ,  Vijay D. Parkhe ,  Jaeyong Cho

IPC分类号： H01L21/683 ,  H01L21/687 ,  H01J37/32

摘要： A workpiece carrier suitable for high power processes is described. It may include a puck to carry the workpiece, a plate bonded to the puck by an adhesive, a mounting ring surrounding the puck and the cooling plate, and a gasket between the mounting ring and the plate, the gasket configured to protect the adhesive.

公开(公告)号：US10784132B2

公开(公告)日：2020-09-22

申请号：US16269484

申请日：2019-02-06

申请人： Applied Materials, Inc.

发明人： Haitao Wang ,  Wonseok Lee ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Kartik Ramaswamy

IPC分类号： H01L21/67 ,  H01L21/683

摘要： A method and apparatus for de-chucking a workpiece is described that uses a swing voltage sequence. One example pertains to a method that includes applying a mechanical force from an electrostatic chuck against the back side of a workpiece that is electrostatically clamped to the chuck, applying a sequence of voltage pulses with a same polarity to the electrodes, each pulse of the sequence having a lower voltage than the preceding pulse, each pulse of the sequence having a lower voltage than the preceding pulse, and determining whether the workpiece is released from the chuck after the sequence of additional voltage pulses and if the workpiece is not released then repeating applying the sequence of voltage pulses.

公开(公告)号：US10440777B2

公开(公告)日：2019-10-08

申请号：US14997842

申请日：2016-01-18

申请人： Applied Materials, Inc.

发明人： Chunlei Zhang ,  Phillip Criminale ,  Steven E. Babayan ,  David Ullstrom

IPC分类号： H05B3/68 ,  C23C16/00 ,  H05B1/02 ,  H01L21/67 ,  H01L21/66 ,  H01L21/683

摘要： Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on the ESC having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate from a target result profile. The first temperature profile is adjusted to a second temperature profile on the ESC based on the deviation profile. Adjusting to the second temperature profile includes incrementing the power to one or more spatially tunable heaters in one or more discrete locations corresponding to the deviations profile. A second substrate is then processed on the ESC using the second temperature profile.

公开(公告)号：US10242893B2

公开(公告)日：2019-03-26

申请号：US15628396

申请日：2017-06-20

申请人： Applied Materials, Inc.

发明人： Haitao Wang ,  Wonseok Lee ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Kartik Ramaswamy

IPC分类号： H01L21/67 ,  H01L21/683

摘要： A method and apparatus for de-chucking a workpiece is described that uses a swing voltage sequence. One example pertains to a method that includes applying a mechanical force from an electrostatic chuck against the back side of a workpiece that is electrostatically clamped to the chuck, applying a sequence of voltage pulses with a same polarity to the electrodes, each pulse of the sequence having a lower voltage than the preceding pulse, each pulse of the sequence having a lower voltage than the preceding pulse, and determining whether the workpiece is released from the chuck after the sequence of additional voltage pulses and if the workpiece is not released then repeating applying the sequence of voltage pulses.

公开(公告)号：US20230089982A1

公开(公告)日：2023-03-23

申请号：US17903581

申请日：2022-09-06

申请人： Applied Materials, Inc.

发明人： Phillip Criminale ,  Andrew Myles ,  Chunlei Zhang ,  Vivek B. Shah ,  Upendra Ummethala

IPC分类号： H01L21/687 ,  H01L21/67 ,  B65G47/90 ,  G06N3/08

摘要： An electronic device manufacturing system includes a transfer chamber, a tool station situated within the transfer chamber, a process chamber coupled to the transfer chamber, and a transfer chamber robot. The transfer chamber robot is configured to transfer substrates to and from the process chamber. The transfer chamber robot is further configured to be coupled to a sensor tool comprising one or more sensors configured to take measurements inside the process chamber. The sensor tool is retrievable from the tool station by an end effector of the transfer chamber robot.

公开(公告)号：US20230076170A1

公开(公告)日：2023-03-09

申请号：US17466403

申请日：2021-09-03

申请人： Applied Materials, Inc.

发明人： Kenneth Brian Doering ,  Vivek B. Shah ,  Ashutosh Agarwal ,  Sanjeev Baluja ,  Shrihari Sampathkumar ,  Chunlei Zhang

IPC分类号： H01L21/67 ,  H01L21/66

摘要： Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.

公开(公告)号：US10930471B2

公开(公告)日：2021-02-23

申请号：US16777220

申请日：2020-01-30

申请人： APPLIED MATERIALS, INC.

发明人： Daisuke Shimizu ,  Taiki Hatakeyama ,  Sean S Kang ,  Katsumasa Kawasaki ,  Chunlei Zhang

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/311

摘要： Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

公开(公告)号：US10854425B2

公开(公告)日：2020-12-01

申请号：US15013795

申请日：2016-02-02

申请人： Applied Materials, Inc.

发明人： Chetan Mahadeswaraswamy ,  Walter R Merry ,  Sergio Fukuda Shoji ,  Chunlei Zhang ,  Yashaswini Pattar ,  Duy D Nguyen ,  Tina Tsong ,  Shane C Nevil ,  Douglas A Buchberger, Jr. ,  Fernando M Silveira ,  Brad L Mays ,  Kartik Ramaswamy ,  Hamid Noorbakhsh

IPC分类号： H01J37/32 ,  G05B6/02 ,  H05H1/00

摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.