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    Showerhead with reduced backside plasma ignition
    1.
    发明授权
    Showerhead with reduced backside plasma ignition 有权

    公开(公告)号：US10745807B2

    公开(公告)日：2020-08-18

    申请号：US16418994

    申请日：2019-05-21

    Applicant: Applied Materials, Inc.

    Inventor： Haitao Wang ,  Hamid Noorbakhsh ,  Chunlei Zhang ,  Sergio Fukuda Shoji ,  Kartik Ramaswamy ,  Roland Smith ,  Brad L. Mays

    IPC: C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32

    Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.

    Methods for etching materials using synchronized RF pulses
    3.
    发明授权
    Methods for etching materials using synchronized RF pulses 有权
    使用同步RF脉冲蚀刻材料的方法

    公开(公告)号：US09269587B2

    公开(公告)日：2016-02-23

    申请号：US14020773

    申请日：2013-09-06

    Applicant: Applied Materials, Inc.

    Inventor： Daisuke Shimizu ,  Jong Mun Kim ,  Katsumasa Kawasaki ,  Sergio Fukuda Shoji

    IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/31116

    Abstract: Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

    Abstract translation: 本发明的实施例提供了使用同步RF脉冲来蚀刻材料层的方法。 在一个实施例中，一种方法包括将气体混合物提供到处理室中，在第一时间点将第一RF源功率施加到处理室以在气体混合物中形成等离子体，在第二时间施加第一RF偏置功率 指向处理室，以对基板执行蚀刻处理，在第三时间点关闭第一RF偏置功率，同时从第一时间点到第二时间点和第三时间点持续保持第一RF源功率接通，以及 在第四时间点关闭第一RF源功率，同时从第一时间点到第二，第三和第四时间点连续地将气体混合物提供到处理室。

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