公开(公告)号：US20200066566A1

公开(公告)日：2020-02-27

申请号：US16674974

申请日：2019-11-05

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Anwar Husain ,  Haitao Wang ,  Evans Yip Lee ,  Jaeyong Cho ,  Hamid Noorbakhsh ,  Kenny L. Doan ,  Sergio Fukuda Shoji ,  Chunlei Zhang

IPC: H01L21/683 ,  H01L21/687

Abstract: Embodiments include an electrostatic chuck assembly having an electrostatic chuck mounted on an insulator. The electrostatic chuck and insulator may be within a chamber volume of a process chamber. In an embodiment, a ground shield surrounds the electrostatic chuck and the insulator, and a gap between the ground shield and the electrostatic chuck provides an environment at risk for electric field emission. A dielectric filler can be placed within the gap to reduce a likelihood of electric field emission. The dielectric filler can have a flexible outer surface that covers or attaches to the electrostatic chuck, or an interface between the electrostatic chuck and the insulator Other embodiments are also described and claimed.

公开(公告)号：US09748366B2

公开(公告)日：2017-08-29

申请号：US14491828

申请日：2014-09-19

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Kenny L. Doan ,  Li Ling ,  Jairaj Payyapilly ,  Srinivas D. Nemani ,  Daisuke Shimizu ,  Yuju Huang

IPC: H01L21/31 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L29/66833 ,  H01L21/31116

Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.

公开(公告)号：US10930540B2

公开(公告)日：2021-02-23

申请号：US16674974

申请日：2019-11-05

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Anwar Husain ,  Haitao Wang ,  Evans Yip Lee ,  Jaeyong Cho ,  Hamid Noorbakhsh ,  Kenny L. Doan ,  Sergio Fukuda Shoji ,  Chunlei Zhang

IPC: C23C14/35 ,  H01L21/683 ,  H01L21/687

Abstract: Embodiments include an electrostatic chuck assembly having an electrostatic chuck mounted on an insulator. The electrostatic chuck and insulator may be within a chamber volume of a process chamber. In an embodiment, a ground shield surrounds the electrostatic chuck and the insulator, and a gap between the ground shield and the electrostatic chuck provides an environment at risk for electric field emission. A dielectric filler can be placed within the gap to reduce a likelihood of electric field emission. The dielectric filler can have a flexible outer surface that covers or attaches to the electrostatic chuck, or an interface between the electrostatic chuck and the insulator Other embodiments are also described and claimed.

公开(公告)号：US20180308736A1

公开(公告)日：2018-10-25

申请号：US15495909

申请日：2017-04-24

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Anwar Husain ,  Haitao Wang ,  Evans Yip Lee ,  Jaeyong Cho ,  Hamid Noorbakhsh ,  Kenny L. Doan ,  Sergio Fukuda Shoji ,  Chunlei Zhang

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H01L21/67069

Abstract: Embodiments include an electrostatic chuck assembly having an electrostatic chuck mounted on an insulator. The electrostatic chuck and insulator may be within a chamber volume of a process chamber. In an embodiment, a ground shield surrounds the electrostatic chuck and the insulator, and a gap between the ground shield and the electrostatic chuck provides an environment at risk for electric field emission. A dielectric filler can be placed within the gap to reduce a likelihood of electric field emission. The dielectric filler can have a flexible outer surface that covers or attaches to the electrostatic chuck, or an interface between the electrostatic chuck and the insulator Other embodiments are also described and claimed.

公开(公告)号：US20150097276A1

公开(公告)日：2015-04-09

申请号：US14491828

申请日：2014-09-19

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Kenny L. Doan ,  Li Ling ,  Jairaj Payyapilly ,  Srinivas D. Nemani ,  Daisuke Shimizu ,  Yuju Huang

IPC: H01L29/792 ,  H01L21/66 ,  H01L21/3065

CPC classification number: H01L29/66833 ,  H01L21/31116

Abstract: An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.

Abstract translation: 通过蚀刻工艺蚀刻具有交替的氧化物层和氮化物层的制品。 蚀刻工艺包括在蚀刻反应器的室中提供包含C 4 F 6 H 2的第一气体，使含有C 4 F 6 H 2的气体电离以产生包含多个离子的等离子体，并使用多个离子蚀刻该制品。