公开(公告)号：US12012654B2

公开(公告)日：2024-06-18

申请号：US17051871

申请日：2019-04-30

申请人： AIXTRON SE

发明人： Alexandre Jouvray ,  Matthew Perry

IPC分类号： C23C16/26 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  C23C16/54

CPC分类号： C23C16/46 ,  C23C16/26 ,  C23C16/45502 ,  C23C16/52 ,  C23C16/545

摘要： In a device for depositing graphene, carbon nano-tubes or other, in particular carbon-contained coatings on a strip-shaped substrate, the substrate enters a reactor housing through an inlet opening and is transported in a transport direction through a process area that is tempered by a tempering device, before being exiting the reactor housing through an outlet opening. Heat-transport-inhibiting means are arranged between the process area and the inlet opening and/or the outlet opening by means of which a heat transport from the process area to the inlet opening or the outlet opening is reduced. Guide elements are also provided in order to guide the substrate into and out of regions directly adjacent to the inlet and outlet openings.

公开(公告)号：US20240011154A1

公开(公告)日：2024-01-11

申请号：US18125435

申请日：2023-03-23

申请人： Samsung Electronics Co., Ltd.

发明人： HYUNJU LEE ,  BYEONGHOON KIM ,  HYOUNCHEOL KIM ,  JAEHYUNG LEE ,  BYUNGHWAN KONG

IPC分类号： C23C16/455 ,  H01L21/673 ,  C23C16/458 ,  C23C16/46

CPC分类号： C23C16/45502 ,  H01L21/6732 ,  C23C16/4583 ,  C23C16/46

摘要： A substrate processing apparatus may include an inner tube providing a process space extending vertically, an outer tube enclosing the inner tube, a gas supplying conduit connected to the process space, and a boat configured to be disposed in the process space. A first inner diameter of the inner tube at a first position may be different from a second inner diameter of the inner tube at a second position, and a level of the second position may be higher than a level of the first position.

公开(公告)号：US20230399744A1

公开(公告)日：2023-12-14

申请号：US18126948

申请日：2023-03-27

申请人： AGILENT TECHNOLOGIES, INC.

发明人： Elizabeth CARR ,  Frank STRELLER ,  Li-Chih HU ,  David Michael LYNCH ,  Richard CLOSSER

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/52

CPC分类号： C23C16/45542 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/4404 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/52

摘要： A device, including a hydrophilic layer on a portion of an inner surface of a transparent polymer forming a body; wherein the hydrophilic layer includes a sulfonated inner surface of the transparent polymer, a silica, a silicon oxycarbide, an O2 plasma treatment of the transparent polymer, or a combination thereof. The device can be a nebulizer or a spray chamber, for example used in an inductively coupled plasma device. A method of making the device is also disclosed.

公开(公告)号：US20230374698A1

公开(公告)日：2023-11-23

申请号：US18361951

申请日：2023-07-31

申请人： ROHM CO., LTD.

发明人： Makoto TAKAMURA ,  Takuji MAEKAWA ,  Mitsuru MORIMOTO ,  Noriyuki MASAGO ,  Takayasu OKA

IPC分类号： C30B25/12 ,  H01L21/02 ,  C30B25/10 ,  C30B25/20 ,  C30B29/36 ,  C30B25/14 ,  C23C16/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC分类号： C30B25/12 ,  H01L21/02529 ,  H01L21/02378 ,  H01L21/02634 ,  C30B25/10 ,  C30B25/20 ,  C30B29/36 ,  C30B25/14 ,  C23C16/325 ,  C23C16/4587 ,  C23C16/46 ,  C23C16/45502

摘要： A fabricating apparatus (2) of an sic epitaxial wafer disclosed herein includes: a growth furnace (100A); a gas mixing preliminary chamber (107) disposed outside the growth furnace and configured to mix carrier gas and/or material gas and to regulate a pressure thereof; a wafer boat (210) configured so that a plurality of SiC wafer pairs (200WP), in which two substrates each having an SiC single crystal in contact with each other in a back-to-back manner, are disposed at equal intervals with a gap therebetween; and a heating unit (101) configured to heat the wafer boat disposed in the growth furnace to an epitaxial growth temperature. The carrier gas and/or the material gas are introduced into the growth furnace after preliminarily being mixed and pressure-regulated in the gas mixing preliminary chamber (107) to grow an SiC layer on a surface of each of the plurality of SiC wafer pairs.

公开(公告)号：US20230313365A1

公开(公告)日：2023-10-05

申请号：US18332638

申请日：2023-06-09

申请人： Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

发明人： Kyung-Eun BYUN ,  Hyoungsub KIM ,  Taejin PARK ,  Hyeonjin SHIN ,  Hoijoon KIM ,  Wonsik AHN ,  Mirine LEEM

IPC分类号： C23C16/30 ,  B22F7/00 ,  C23C16/46 ,  C23C16/448 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L31/032

CPC分类号： C23C16/305 ,  B22F7/008 ,  C23C16/46 ,  C23C16/448 ,  C23C16/45502 ,  C23C16/45514 ,  H01L21/02568 ,  H01L21/02581 ,  H01L21/28568 ,  H01L31/0324 ,  B22F2207/01 ,  B22F2302/45

摘要： Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

公开(公告)号：US11746415B2

公开(公告)日：2023-09-05

申请号：US16872394

申请日：2020-05-12

申请人： CARBONCOMPETENCE GMBH

发明人： Doris Steinmuller-Nethl ,  Detlef Steinmuller

IPC分类号： C30B25/10 ,  C23C16/455 ,  C23C16/27 ,  C30B25/16 ,  C30B29/04 ,  C23C16/448 ,  C30B25/14

CPC分类号： C23C16/45502 ,  C23C16/27 ,  C23C16/448 ,  C23C16/4488 ,  C23C16/4557 ,  C23C16/45578 ,  C30B25/10 ,  C30B25/14 ,  C30B25/165 ,  C30B29/04

摘要： The invention relates to a device (1) and method for applying a carbon layer, in particular a diamond layer, to a substrate (2, 2a) by means of chemical vapour deposition, comprising a deposition chamber (3) into which a process gas, in particular molecular hydrogen and/or a mixture of molecular hydrogen and a carbon-containing gas, such as methane can be supplied, wherein a gas inlet and gas activation element (7) is provided in the form of a hollow body with a flow channel (7b) for the process gas, a wall (7a) surrounding the flow channel (7b), and an outlet opening (16) feeding from the flow channel (7b) into the deposition chamber (3), and a heating device (8) is provided for heating the wall (7a) of the gas inlet and gas activation element (7).

公开(公告)号：US11735415B2

公开(公告)日：2023-08-22

申请号：US17267768

申请日：2019-06-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Takaya Miyase ,  Keiji Wada

IPC分类号： H01L21/02 ,  C23C16/32 ,  C23C16/455

CPC分类号： H01L21/02378 ,  C23C16/325 ,  C23C16/45502 ,  H01L21/02271 ,  H01L21/02433

摘要： A first main surface is a (000-1) plane or a plane inclined by an angle of less than or equal to 8° relative to the (000-1) plane. A reaction chamber has a cross-sectional area of more than or equal to 132 cm2 and less than or equal to 220 cm2 in a plane perpendicular to a direction of movement of a mixed gas. When an X axis indicates a first value and a Y axis indicates a second value, the first value and the second value fall within a hexagonal region surrounded by first coordinates, second coordinates, third coordinates, fourth coordinates, fifth coordinates and sixth coordinates in XY plane coordinates, where the first coordinates are (0.038, 0.0019), the second coordinates are (0.069, 0.0028), the third coordinates are (0.177, 0.0032), the fourth coordinates are (0.038, 0.0573), the fifth coordinates are (0.069, 0.0849), and the sixth coordinates are (0.177, 0.0964).

公开(公告)号：US09987657B2

公开(公告)日：2018-06-05

申请号：US14581154

申请日：2014-12-23

申请人： UCHICAGO ARGONNE, LLC

发明人： Jie Li ,  Yung Liu

IPC分类号： B01J2/00 ,  C23C16/44 ,  C23C16/442 ,  C23C16/455 ,  B05C19/02 ,  B05C19/06 ,  B05D1/24 ,  B01J2/16

CPC分类号： B05C19/02 ,  B01J2/006 ,  B01J2/16 ,  B05C19/06 ,  B05D1/24 ,  C23C16/4417 ,  C23C16/442 ,  C23C16/45502

摘要： The invention provides a method for dispersing particles within a reaction field, the method comprising confining the particles to the reaction field using a standing wave. The invention also provides a system for coating particles, the system comprising a reaction zone; a means for producing fluidized particles within the reaction zone; a fluid to produce a standing wave within the reaction zone; and a means for introducing coating moieties to the reaction zone. The invention also provides a method for coating particles, the method comprising fluidizing the particles, subjecting the particles to a standing wave; and contacting the subjected particles with a coating moiety.

公开(公告)号：US09934960B2

公开(公告)日：2018-04-03

申请号：US15059591

申请日：2016-03-03

申请人： Hitachi Kokusai Electric Inc.

发明人： Hideki Horita ,  Risa Yamakoshi ,  Masato Terasaki

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/4408 ,  C23C16/45502 ,  C23C16/45527 ,  C23C16/45561 ,  H01L21/02211 ,  H01L21/0228

摘要： A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including: (a) supplying a source gas to a substrate in a process container; (b) supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing (a); (c) supplying a reactive gas to the substrate; and (d) supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing (c).

公开(公告)号：US09890455B2

公开(公告)日：2018-02-13

申请号：US13250906

申请日：2011-09-30

申请人： Nyi O. Myo ,  John S. Webb ,  Masato Ishii ,  Xuebin Li ,  Zhiyuan Ye ,  Ali Zojaji

发明人： Nyi O. Myo ,  John S. Webb ,  Masato Ishii ,  Xuebin Li ,  Zhiyuan Ye ,  Ali Zojaji

IPC分类号： C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  H01L21/673

CPC分类号： C23C16/45591 ,  C23C16/45502 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/67386 ,  H01L21/687 ,  H01L21/68792

摘要： Embodiments of the present invention generally relates to apparatus for use in film depositions. The apparatus generally include pre-heat rings adapted to be positioned in a processing chamber. In one embodiment, a pre-heat ring includes a ring having an inner edge and an outer edge. The outer edge has a constant radius. The inner edge is oblong-shaped and may have a first portion having a constant radius measured from a center of a circle defined by an outer circumference of the ring. A second portion may have a constant radius measured from a location other than the center of the outer circumference. In another embodiment, a processing chamber includes a pre-heat ring positioned around the periphery of a substrate support. The pre-heat ring includes an inner edge having a first portion, a second portion, and one or more linear portions positioned between the first portion and the second portion.