公开(公告)号：US20240218562A1

公开(公告)日：2024-07-04

申请号：US18398449

申请日：2023-12-28

申请人： GlobalWafers Co., Ltd.

发明人： Manabu Hamano

IPC分类号： C30B25/16 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02

CPC分类号： C30B25/165 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/186 ,  H01L21/02532 ,  H01L21/0262 ,  C30B29/06

摘要： A method of processing semiconductor wafers includes placing a semiconductor wafer in a recess of a susceptor within a heated chamber. The recess is defined in the susceptor by a downwardly depending sidewall. The method also includes determining a distance of a peripheral edge of the wafer from the sidewall. The method also includes supplying a first process gas into the heated chamber at a first gas flow rate and a second process gas into the heated chamber at a second gas flow rate, and supplying heat to the heated chamber. The method also includes modulating the first gas flow rate, the second gas flow rate, and/or the heat supplied to the heated chamber to control a deposition rate of the first and second process gases near the peripheral edge of the wafer based on the determined distance of the peripheral edge of the wafer from the sidewall.

公开(公告)号：US20240158953A1

公开(公告)日：2024-05-16

申请号：US18224396

申请日：2023-07-20

申请人： Korea Institute of Ceramic Engineering and Technology ,  Electronics and Telecommunications Research Institute

发明人： Dae-Woo JEON ,  Ji-Hyeon PARK ,  Jae-Kyoung MUN

IPC分类号： C30B25/04 ,  C30B25/10 ,  C30B25/16 ,  C30B25/22 ,  C30B29/16 ,  C30B29/38

CPC分类号： C30B25/04 ,  C30B25/10 ,  C30B25/165 ,  C30B25/22 ,  C30B29/16 ,  C30B29/38

摘要： Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.

公开(公告)号：US20240150932A1

公开(公告)日：2024-05-09

申请号：US18548938

申请日：2022-02-25

申请人： SILTRONIC AG

发明人： Hannes Hecht ,  Michael Lauer ,  Korbinian Lichtenegger ,  Walter Edmaier

IPC分类号： C30B25/08 ,  C23C16/44 ,  C30B25/16 ,  H01L21/02

CPC分类号： C30B25/08 ,  C23C16/4408 ,  C30B25/165 ,  H01L21/0262 ,  C30B25/20 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0254

摘要： A method produces semiconductor wafers in a chamber of a deposition reactor of a plant. The method includes: repeatedly depositing an epitaxial layer on a substrate wafer in the chamber, producing semiconductor wafers, and at the same time: conditioning a replacement chamber outside the plant by purging the replacement chamber with a purge gas; interrupting the deposition of the epitaxial layer; replacing the chamber with the replacement chamber, after the conditioning, the replacement chamber being sealed and transported in a closed state to the plant or after the conditioning, the replacement chamber is transported to the plant and in this process purge gas is passed through the replacement chamber; and continuing the deposition of the epitaxial layer in the replacement chamber, producing a second number of semiconductor wafers.

公开(公告)号：US11929401B2

公开(公告)日：2024-03-12

申请号：US17567546

申请日：2022-01-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chien-Wei Lee ,  Hsueh-Chang Sung ,  Yen-Ru Lee

IPC分类号： H01L29/165 ,  C30B25/10 ,  C30B25/12 ,  C30B25/16 ,  H01L21/02 ,  H01L21/324 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L29/165 ,  C30B25/10 ,  C30B25/12 ,  C30B25/165 ,  H01L21/02315 ,  H01L21/02658 ,  H01L21/02661 ,  H01L21/3247 ,  H01L29/41791 ,  H01L29/66636 ,  H01L29/66795

摘要： Embodiments provide a way of treating source/drain recesses with a high heat treatment and an optional hydrogen plasma treatment. The high heat treatment smooths the surfaces inside the recesses and remove oxides and etching byproducts. The hydrogen plasma treatment enlarges the recesses vertically and horizontally and inhibits further oxidation of the surfaces in the recesses.

公开(公告)号：US11879184B2

公开(公告)日：2024-01-23

申请号：US17848927

申请日：2022-06-24

申请人： Panasonic Holdings Corporation

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Shigeyoshi Usami ,  Junichi Takino ,  Masayuki Hoteida ,  Shunichi Matsuno

IPC分类号： C30B35/00 ,  C30B25/16 ,  C30B29/40 ,  C23C16/455 ,  C23C16/30 ,  C30B25/14

CPC分类号： C30B25/165 ,  C23C16/303 ,  C23C16/45561 ,  C30B25/14 ,  C30B29/406 ,  C30B35/00

摘要： A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “θ”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L1”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M1”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°

公开(公告)号：US20230332328A1

公开(公告)日：2023-10-19

申请号：US18125877

申请日：2023-03-24

申请人： Shanghai Huali Integrated Circuit Corporation

发明人： Hui Wang ,  Huojin Tu ,  Jiaqi Hong ,  Jun Tan ,  Jingxun Fang

IPC分类号： C30B25/14 ,  C30B25/16 ,  C23C16/455

CPC分类号： C30B25/14 ,  C23C16/45563 ,  C30B25/165

摘要： The present application provides a reaction device for improving epitaxial growth uniformity, provided with a main inject port on one side and an exhaust port on the other side, wherein a base is provided between the main inject port and the exhaust port; the reaction cavity is provided with first and second inject pipes; the length directions of the first and second inject pipes are perpendicular to a connecting line between the main inject port and the exhaust port; the lengths of the first and second inject pipes are both equal to the radius of the base; the first and second inject pipes are located in a straight line along the length directions; the first and second inject pipes are each provided with a plurality of holes; and the plurality of holes on the first and second inject pipes are located above the wafer placed on the base.

公开(公告)号：US11760641B2

公开(公告)日：2023-09-19

申请号：US17295242

申请日：2019-10-14

申请人： PEKING UNIVERSITY

发明人： Hailin Peng ,  Liming Zheng ,  Bing Deng

IPC分类号： C01B32/194 ,  C30B25/10 ,  C30B25/16 ,  C30B25/18 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： C01B32/194 ,  C30B25/10 ,  C30B25/165 ,  C30B25/18 ,  B82Y30/00 ,  B82Y40/00 ,  C01B2204/04

摘要： A method for preparing suspended graphene support film by selectively etching growth substrate is disclosed in present invention. The transfer process of graphene is avoided. The process of present invention is efficient and low in cost, suspended graphene support film can be prepared in a single etching step. The prepared graphene support film does not need any support by polymer film and polymer fiber. The prepared graphene support film has controllable number of layers and high intactness (90%-97%), large suspended area (diameter is 10-50 μm), wide clean area (>100 nm) and can be mass-produced. In addition, the graphene support film can be directly used as transmission electron microscope support film, and can be used to achieve high resolution imaging of nanoparticles.

公开(公告)号：US20230212787A1

公开(公告)日：2023-07-06

申请号：US18121823

申请日：2023-03-15

申请人： AZUR SPACE Solar Power GmbH

发明人： Clemens WAECHTER ,  Jan STRATE

IPC分类号： C30B25/16 ,  C30B25/14 ,  C23C16/448 ,  C23C16/52

CPC分类号： C30B25/165 ,  C23C16/52 ,  C23C16/4482 ,  C30B25/14

摘要： A Metalorganic chemical vapor phase epitaxy or vapor phase deposition apparatus, having a first gas source system, a reactor, an exhaust gas system, and a control unit, wherein the first gas source system has a carrier gas source, a bubbler with an organometallic starting compound, and a first supply section leading to the reactor either directly or through a first control valve, the carrier gas source is connected to an inlet of the bubbler through a first mass flow controller by a second supply section, an outlet of the bubbler is connected to the first supply section, and the carrier gas source is connected to the first supply section through a second mass flow controller by a third supply section, the first supply section is connected to an inlet of the reactor through a third mass flow controller.

公开(公告)号：US11683997B2

公开(公告)日：2023-06-20

申请号：US15733204

申请日：2018-12-12

申请人： Quantum Designed Materials Ltd.

发明人： Refael Gatt

IPC分类号： H01L39/12 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  C30B23/00 ,  C30B23/02 ,  C30B25/16 ,  C30B25/18 ,  C30B29/22 ,  H01B1/08 ,  H01L39/22 ,  H01L39/24

CPC分类号： H01L39/12 ,  C23C16/0272 ,  C23C16/408 ,  C23C16/45531 ,  C23C16/56 ,  C30B23/005 ,  C30B23/025 ,  C30B25/165 ,  C30B25/183 ,  C30B29/22 ,  H01B1/08 ,  H01L39/223 ,  H01L39/24

摘要： A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

公开(公告)号：US11680318B2

公开(公告)日：2023-06-20

申请号：US17804668

申请日：2022-05-31

申请人： Edwards Semiconductor Solutions LLC

发明人： Egbert Woelk ,  Ronald L. Dicarlo, Jr.

IPC分类号： C23C16/455 ,  C30B25/14 ,  C30B25/16 ,  B01F23/10 ,  B01F35/221 ,  C23C16/52 ,  H01L21/205 ,  C23C16/448 ,  C30B29/40

CPC分类号： C23C16/45512 ,  B01F23/191 ,  B01F35/221 ,  C23C16/4481 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/205 ,  C30B29/40 ,  Y10T137/0318 ,  Y10T137/2509

摘要： A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.