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    Methods and Devices for Impedance Multiplication
    1.
    发明申请
    Methods and Devices for Impedance Multiplication 审中-公开

    公开(公告)号：US20190148848A1

    公开(公告)日：2019-05-16

    申请号：US16136124

    申请日：2018-09-19

    申请人： PsiQuantum

    发明人： Faraz Najafi ,  Qiaodan Jin Stone

    IPC分类号： H01R4/68 ,  H01L39/12 ,  H01B12/14

    CPC分类号： H01R4/68 ,  H01B12/14 ,  H01L27/18 ,  H01L39/12 ,  H01L39/16 ,  H03K19/195

    摘要： The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting circuits. In one aspect, an electric circuit includes: (1) a first superconducting component having a first terminal, a second terminal, and a constriction region between the first terminal and the second terminal; (2) a second superconducting component having a third terminal and a fourth terminal; and (3) a first electrically-insulating component that thermally couples the first superconducting component and the second superconducting component such that heat produced at the constriction region is transferred through the first component to the second superconducting component.

    PURPOSING AND REPURPOSING A GROUP OF COMPOUNDS THAT CAN BE USED AS HIGH TEMPERATURE SUPERCONDUCTORS
    5.
    发明申请
    PURPOSING AND REPURPOSING A GROUP OF COMPOUNDS THAT CAN BE USED AS HIGH TEMPERATURE SUPERCONDUCTORS 审中-公开

    公开(公告)号：US20170279028A1

    公开(公告)日：2017-09-28

    申请号：US15077683

    申请日：2016-03-22

    申请人： Dong Zhao ,  George Jin Zhao

    发明人： Dong Zhao ,  George Jin Zhao

    IPC分类号： H01L39/12 ,  C01F15/00

    CPC分类号： H01L39/12 ,  C01F15/00 ,  C01F17/00 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2006/40 ,  H01L39/005

    摘要： This disclosure will describe a novel finding and make the claim for the first time on a group of old compounds and formulated new compounds. These compounds have superconducting property at high temperatures, i.e., 151K or higher. Several compounds were prepared, though not well-purified, at around middle of 1900s. Their chemical, structural, electric and magnetic properties were studied and reported but their superconducting property has not been known and has never been exploited because the idea of type-II superconductivity was not proposed at that time. Consequently, we claim this finding as an invention even though our invention is based on the studies of the compounds' electric and magnetic properties along with their crystallographic features from the previous publications. The experiments to further verify their high temperature superconductivity require the utilization of sophisticated facilities on synthesizing highly pure compounds and the deregulation from government security authorities on purchasing the starting materials.

    Double-masking technique for increasing fabrication yield in superconducting electronics
    6.
    发明授权
    Double-masking technique for increasing fabrication yield in superconducting electronics 有权
    双屏蔽技术，用于提高超导电子产品的制造成本

    公开(公告)号：US09595656B2

    公开(公告)日：2017-03-14

    申请号：US14850634

    申请日：2015-09-10

    申请人： Hypres Inc.

    发明人： Sergey K. Tolpygo

    IPC分类号： H01L29/06 ,  H01L39/24 ,  H01L39/02 ,  H01L39/12 ,  H01L39/22 ,  H01L27/18

    CPC分类号： H01L27/18 ,  H01L39/025 ,  H01L39/12 ,  H01L39/223 ,  H01L39/2406 ,  H01L39/249 ,  H01L39/2493

    摘要： An improved microfabrication technique for Josephson junctions in superconducting integrated circuits, based on the use of a double-layer lithographic mask for partial anodization of the side-walls and base electrode of the junctions. The top layer of the mask is a resist material, and the bottom layer is a dielectric material chosen so to maximize adhesion between the resist and the underlying superconducting layer, be etch-compatible with the underlying superconducting layer, and be insoluble in the resist and anodization processing chemistries. The superconductor is preferably niobium, under a silicon dioxide layer, with a conventional photoresist or electron-beam resist as the top layer. This combination results in a substantial increase in the fabrication yield of high-density superconducting integrated circuits, increase in junction uniformity and reduction in defect density. A dry etch more compatible with microlithography may be employed.

    摘要翻译： 基于使用双层光刻掩模对结点的侧壁和基极进行部分阳极氧化的改进的超导集成电路中约瑟夫森结的微细加工技术。 掩模的顶层是抗蚀剂材料，并且底层是选择的电介质材料，以使抗蚀剂和下面的超导层之间的粘合力最大化，与下面的超导层进行蚀刻兼容，并且不溶于抗蚀剂， 阳极氧化处理化学品。 超导体优选是在二氧化硅层下的铌，其中常规的光致抗蚀剂或电子束抗蚀剂作为顶层。 这种组合导致高密度超导集成电路的制造产量的显着增加，结点均匀性的增加和缺陷密度的降低。 可以采用与微光刻相容的干蚀刻。

    Efficient polarization independent single photon detector
    7.
    发明授权
    Efficient polarization independent single photon detector 有权
    高效偏振无关单光子探测器

    公开(公告)号：US09577175B1

    公开(公告)日：2017-02-21

    申请号：US14698442

    申请日：2015-04-28

    申请人： NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

    发明人： Sae Woo Nam ,  Burm Baek ,  Francesco Marsili ,  Varun Verma

    IPC分类号： H01L39/10 ,  H01L39/02 ,  G01J1/42

    CPC分类号： H01L39/02 ,  G01J1/42 ,  H01L39/10 ,  H01L39/12 ,  H01L39/24

    摘要： An apparatus includes a base layer; and a superconducting nanowire disposed on the base layer in a continuous meander pattern and including an amorphous metal-metalloid alloy such that the apparatus is configured to detect single photons, and the continuous meander pattern includes: a plurality of parallel line segments; and a plurality of curved segments, wherein adjacent parallel line segments are joined by a curved segment. A method for making an apparatus for detecting single photons includes forming a base layer; forming a superconducting layer on the base layer; patterning the superconducting layer; and forming a continuous meander pattern from the superconducting layer, the continuous meander pattern includes a plurality of parallel line segments; and a plurality of curved segments, wherein adjacent parallel line segments are joined by a curved segment; and forming a dielectric layer on the continuous meander pattern, the dielectric layer including a dielectric material that is substantially transparent to a predetermined photon wavelength, wherein the apparatus is configured to detect single photons.

    摘要翻译： 一种装置包括：基层; 以及超导纳米线，其以连续的曲折图案设置在基底层上并且包括无定形金属 - 准金属合金，使得该装置被配置为检测单个光子，并且连续曲折图案包括：多个平行线段; 以及多个弯曲段，其中相邻的平行线段通过弯曲段连接。 用于制造用于检测单个光子的装置的方法包括形成基层; 在基层上形成超导层; 图案化超导层; 以及从所述超导层形成连续曲折图案，所述连续曲折图案包括多个平行线段; 以及多个弯曲段，其中相邻的平行线段通过弯曲段连接; 以及在所述连续弯曲图案上形成电介质层，所述电介质层包括对预定光子波长基本透明的介电材料，其中所述装置被配置为检测单个光子。

    MAGNETIC TOPOLOGICAL NANOWIRES
    8.
    发明申请
    MAGNETIC TOPOLOGICAL NANOWIRES 有权
    磁性拓扑学纳米级

    公开(公告)号：US20160035470A1

    公开(公告)日：2016-02-04

    申请号：US14818002

    申请日：2015-08-04

    申请人： THE TRUSTEES OF PRINCETON UNIVERSITY

    发明人： Ali Yazdani ,  Andrei Bernevig

    IPC分类号： H01F6/06

    CPC分类号： H01L39/22 ,  B82Y10/00 ,  G06N99/002 ,  H01F1/0072 ,  H01L39/12

    摘要： A magnetic topological nanowire structure comprises a superconductor and a quasi-1D magnetic nanowire. The quasi-1D magnetic nanowire is coupled to or embedded in the superconductor to produce a self-contained interaction resulting in a spatially separated pair of Majorana fermions. The pair of Majorana fermions corresponds to the topological superconductor and each of the pair of the Majorana fermions are localized near a respective endpoint of the nanowire.

    摘要翻译： 磁拓扑纳米线结构包括超导体和准1D磁纳米线。 准1D磁纳米线与超导体耦合或嵌入超导体中以产生独立的相互作用，从而产生空间上分离的马萨诸塞州费米子对。 一对Majorana费米子对应于拓扑超导体，并且一对Majorana费米子中的每一个都位于纳米线的相应端点附近。