公开(公告)号：US20250011970A1

公开(公告)日：2025-01-09

申请号：US18705632

申请日：2023-01-26

Applicant: Gaianixx Inc.

Inventor： Takeshi Kijima

IPC: C30B29/68 ,  C30B23/02 ,  C30B25/18 ,  C30B29/02 ,  C30B29/16 ,  C30B29/38

Abstract: Provided are a laminated structure including an epitaxial film having good adhesion and crystallinity, an electronic device, an electronic apparatus, and a manufacturing method that can provide the same in an industrially advantageous manner.
In a method for manufacturing a laminated structure in which an epitaxial layer is laminated on a crystal substrate with at least a compound film interposed therebetween, the lamination is performed by a step of providing a compound element supply sacrificial layer containing a compound element on the crystal substrate and a step of forming the epitaxial layer using the compound element of the compound element supply sacrificial layer.

公开(公告)号：US12163248B2

公开(公告)日：2024-12-10

申请号：US17611748

申请日：2020-05-15

Applicant: Kennametal Inc.

Inventor： Zhenyu Liu

IPC: C30B28/14 ,  C30B29/20 ,  C30B29/36 ,  C30B29/38

Abstract: In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.

公开(公告)号：US12077873B2

公开(公告)日：2024-09-03

申请号：US17107034

申请日：2020-11-30

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Hsin Lin ,  Li-Duan Tsai ,  Wen-Hsuan Chao ,  Chiu-Ping Huang ,  Pin-Hsin Yang ,  Hsiao-Chun Huang ,  Jiunn-Nan Lin ,  Yu-Ming Lin

IPC: C25B11/075 ,  C01B21/06 ,  C25B1/04 ,  C25B9/73 ,  C25B11/051 ,  C25B11/057 ,  C30B25/06 ,  C30B29/38

CPC classification number: C25B11/075 ,  C01B21/0615 ,  C01B21/0622 ,  C25B1/04 ,  C25B9/73 ,  C25B11/051 ,  C25B11/057 ,  C30B25/06 ,  C30B29/38 ,  C01P2002/02 ,  C01P2002/76

Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0

公开(公告)号：US12009206B2

公开(公告)日：2024-06-11

申请号：US18112750

申请日：2023-02-22

Applicant: National University Corporation Nagoya University ,  TOYODA GOSEI CO., LTD

Inventor： Shugo Nitta ,  Yoshio Honda ,  Kentaro Nagamatsu ,  Hiroshi Amano ,  Naoki Fujimoto

IPC: C30B35/00 ,  C30B29/16 ,  C30B29/36 ,  C30B29/38 ,  H01L21/02 ,  C30B23/02 ,  C30B23/06

CPC classification number: H01L21/02518 ,  C30B29/16 ,  C30B29/36 ,  C30B29/38 ,  C30B35/007 ,  C30B23/02 ,  C30B23/06 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/00

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

公开(公告)号：US20240105449A1

公开(公告)日：2024-03-28

申请号：US18374744

申请日：2023-09-29

Applicant: MITSUBISHI CHEMICAL CORPORATION

Inventor： Yutaka MIKAWA ,  Hideo FUJISAWA ,  Tae MOCHIZUKI ,  Hideo NAMITA ,  Shinichiro KAWABATA

IPC: H01L21/02 ,  C30B7/10 ,  C30B29/38 ,  C30B29/40 ,  C30B33/06 ,  H01L29/20 ,  H01L33/00

CPC classification number: H01L21/02389 ,  C30B7/10 ,  C30B29/38 ,  C30B29/406 ,  C30B33/06 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L33/0093 ,  H01L21/02433

Abstract: A conductive C-plane GaN substrate has a resistivity of 2×10−2 Ω·cm or less or an n-type carrier concentration of 1×1018 cm−3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

公开(公告)号：US20230413569A1

公开(公告)日：2023-12-21

申请号：US18319869

申请日：2023-05-18

Applicant: Applied Materials, Inc.

Inventor： Hsiang Yu Lee ,  Pradeep K. Subrahmanyan

IPC: H10B43/35 ,  C30B29/06 ,  C30B29/38 ,  C30B29/16 ,  C30B29/68 ,  C30B33/08 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B43/35 ,  C30B29/06 ,  C30B29/38 ,  H10B43/27 ,  C30B29/68 ,  C30B33/08 ,  H10B43/10 ,  C30B29/16

Abstract: A three-dimensional NAND flash memory structure may include solid channel cores of epitaxial silicon that are grown directly from a silicon substrate reference. The alternating oxide-nitride material layers may be formed as a stack, and a channel hole may be etched through the material layers that extends down to the silicon substrate. A tunneling layer may be formed around the channel hole to contact the alternating material layers, and an epitaxial silicon core may be grown from the silicon substrate up through the channel holes. In some implementations, support structures may be formed in channel holes or in slits of the memory array to provide physical support while the epitaxial silicon cores are grown through the channels.

公开(公告)号：US11732380B2

公开(公告)日：2023-08-22

申请号：US16410224

申请日：2019-05-13

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Fumimasa Horikiri ,  Takeshi Kimura

IPC: C30B29/38 ,  C30B33/00 ,  C30B25/18

CPC classification number: C30B29/38 ,  C30B25/18 ,  C30B33/00

Abstract: There is provided a nitride crystal substrate having a main surface and formed of group-III nitride crystal, wherein NIR/NElec, satisfies formula (1) below, which is a ratio of a carrier concentration NIR at a center of the main surface relative to a carrier concentration NElec: 0.5≤NIR/NElec≤1.5 . . . (1) where NIR is the carrier concentration on the main surface side of the nitride crystal substrate obtained based on a reflectance of the main surface measured by a reflection type Fourier transform infrared spectroscopy, and NElec is the carrier concentration in the nitride crystal substrate obtained based on a specific resistance of the nitride crystal substrate and a mobility of the nitride crystal substrate measured by an eddy current method.

公开(公告)号：US11640906B2

公开(公告)日：2023-05-02

申请号：US16617799

申请日：2018-04-19

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED ,  HOSEI UNIVERSITY

Inventor： Fumimasa Horikiri ,  Takehiro Yoshida ,  Tomoyoshi Mishima

IPC: H01L21/20 ,  C30B25/20 ,  C30B29/38 ,  C30B31/22 ,  H01L21/265

Abstract: Provided is a crystal laminate including: a crystal substrate formed from a monocrystal of group III nitride expressed by a compositional formula InxAlyGa1-x-yN (where 0≤x≤1, 0≤y≤1, 0≤x+y≤1), the crystal substrate containing at least any one of n-type impurity selected from the group consisting of Si, Ge, and O; and a crystal layer formed by a group III nitride crystal epitaxially grown on a main surface of the crystal substrate, at least any one of p-type impurity selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb being ion-implanted in the crystal layer. The crystal laminate is configured in a manner such that an absorption coefficient of the crystal substrate for light with a wavelength of 2000 nm when the crystal substrate is irradiated with the light falls within a range of 1.8 cm−1 or more and 4.6 cm−1 or less under a temperature condition of normal temperature.

公开(公告)号：US20220267928A1

公开(公告)日：2022-08-25

申请号：US17703849

申请日：2022-03-24

Applicant: Emmanuelle Charpentier ,  The Regents of the University of California ,  University of Vienna

Inventor： Jennifer A. Doudna ,  Martin Jinek ,  Krzysztof Chylinski ,  Emmanuelle Charpentier

IPC: C30B29/40 ,  H01L33/00 ,  H01L33/32 ,  C30B29/38 ,  H01L21/205

Abstract: The present disclosure provides a DNA-targeting RNA that comprises a targeting sequence and, together with a modifying polypeptide, provides for site-specific modification of a target DNA and/or a polypeptide associated with the target DNA. The present disclosure further provides site-specific modifying polypeptides. The present disclosure further provides methods of site-specific modification of a target DNA and/or a polypeptide associated with the target DNA The present disclosure provides methods of modulating transcription of a target nucleic acid in a target cell, generally involving contacting the target nucleic acid with an enzymatically inactive Cas9 polypeptide and a DNA-targeting RNA. Kits and compositions for carrying out the methods are also provided. The present disclosure provides genetically modified cells that produce Cas9; and Cas9 transgenic non-human multicellular organisms.

公开(公告)号：US20220235487A1

公开(公告)日：2022-07-28

申请号：US17611748

申请日：2020-05-15

Applicant: Kennametal Inc.

Inventor： Zhenyu LIU

IPC: C30B28/14 ,  C30B29/20 ,  C30B29/36 ,  C30B29/38

Abstract: In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.