公开(公告)号：US12077873B2

公开(公告)日：2024-09-03

申请号：US17107034

申请日：2020-11-30

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Kuo-Hsin Lin ,  Li-Duan Tsai ,  Wen-Hsuan Chao ,  Chiu-Ping Huang ,  Pin-Hsin Yang ,  Hsiao-Chun Huang ,  Jiunn-Nan Lin ,  Yu-Ming Lin

IPC分类号： C25B11/075 ,  C01B21/06 ,  C25B1/04 ,  C25B9/73 ,  C25B11/051 ,  C25B11/057 ,  C30B25/06 ,  C30B29/38

CPC分类号： C25B11/075 ,  C01B21/0615 ,  C01B21/0622 ,  C25B1/04 ,  C25B9/73 ,  C25B11/051 ,  C25B11/057 ,  C30B25/06 ,  C30B29/38 ,  C01P2002/02 ,  C01P2002/76

摘要： A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0

公开(公告)号：US10063210B2

公开(公告)日：2018-08-28

申请号：US15293108

申请日：2016-10-13

申请人： Qorvo US, Inc.

发明人： Kevin McCarron ,  John Belsick

IPC分类号： H03H3/02 ,  C30B25/06 ,  C30B25/18 ,  C30B29/40 ,  H03H9/205 ,  H03H9/02

CPC分类号： H03H3/02 ,  C23C14/0036 ,  C23C14/024 ,  C23C14/0617 ,  C23C14/086 ,  C23C14/226 ,  C23C14/3442 ,  C23C14/35 ,  C23C14/566 ,  C23C14/568 ,  C30B25/06 ,  C30B25/186 ,  C30B29/403 ,  H01J37/32715 ,  H01J37/3408 ,  H01J37/3417 ,  H01J37/3447 ,  H01J37/347 ,  H01L41/35 ,  H03H9/02015 ,  H03H9/02047 ,  H03H9/02157 ,  H03H9/125 ,  H03H9/173 ,  H03H9/175 ,  H03H9/205

摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

公开(公告)号：US09922809B2

公开(公告)日：2018-03-20

申请号：US15293063

申请日：2016-10-13

申请人： Qorvo US, Inc.

发明人： Kevin McCarron ,  John Belsick

IPC分类号： C23C14/35 ,  H01J37/34 ,  H01L41/35

CPC分类号： H03H3/02 ,  C23C14/0036 ,  C23C14/024 ,  C23C14/0617 ,  C23C14/086 ,  C23C14/226 ,  C23C14/3442 ,  C23C14/35 ,  C23C14/566 ,  C23C14/568 ,  C30B25/06 ,  C30B25/186 ,  C30B29/403 ,  H01J37/32715 ,  H01J37/3408 ,  H01J37/3417 ,  H01J37/3447 ,  H01J37/347 ,  H01L41/35 ,  H03H9/02015 ,  H03H9/02047 ,  H03H9/02157 ,  H03H9/125 ,  H03H9/173 ,  H03H9/175 ,  H03H9/205

摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

公开(公告)号：US20170088975A1

公开(公告)日：2017-03-30

申请号：US15196119

申请日：2016-06-29

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： RYOSUKE KIKUCHI ,  TORU NAKAMURA ,  SATORU TAMURA ,  HIDEAKI MURASE ,  KAZUHITO HATO

IPC分类号： C30B25/06 ,  C30B29/68 ,  C30B29/16 ,  C25B1/04 ,  H01G9/20 ,  C25B9/06 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  C30B29/38 ,  C25B11/04

CPC分类号： C30B25/06 ,  B01J23/20 ,  B01J35/004 ,  C23C14/0036 ,  C23C14/0042 ,  C23C14/0676 ,  C23C14/083 ,  C23C14/3414 ,  C25B1/04 ,  C25B9/06 ,  C25B11/0405 ,  C25B11/0415 ,  C25B11/0447 ,  C30B23/063 ,  C30B29/16 ,  C30B29/38 ,  C30B29/68 ,  H01G9/2031 ,  Y02E60/364 ,  Y02E60/366

摘要： To provide a method for growing a niobium oxynitride having small carrier density, the present invention is a method for growing a niobium oxynitride layer, the method comprising: (a) growing a first niobium oxynitride film on a crystalline titanium oxide substrate, while a temperature of the crystalline titanium oxide substrate is maintained at not less than 600 Celsius degrees and not more than 750 Celsius degrees; and (b) growing a second nitride oxynitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at not less than 350 Celsius degrees, after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.

公开(公告)号：US09200379B2

公开(公告)日：2015-12-01

申请号：US13888187

申请日：2013-05-06

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Hitoshi Noguchi

IPC分类号： C30B25/18 ,  C30B25/06 ,  C30B29/02 ,  C30B29/04 ,  C30B29/16 ,  C30B29/36 ,  C30B33/08

CPC分类号： C30B25/183 ,  C30B25/06 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  C30B29/16 ,  C30B29/36 ,  C30B33/08

摘要： A base material for growing a single crystal diamond that includes at least a single crystal SiC substrate, and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.

摘要翻译： 用于生长包括至少单晶SiC衬底的单晶金刚石的基材，以及在要生长单晶金刚石的单晶SiC衬底的一侧异质外延生长的铱膜或铑膜。 结果，提供了用于生长单晶金刚石的基材和用于制造单晶金刚石基底的方法，该单晶金刚石基底可以生长具有大面积和良好结晶度的单晶金刚石，并且生产高质量的单晶金刚石基底 低成本。

公开(公告)号：US20150332817A1

公开(公告)日：2015-11-19

申请号：US14652653

申请日：2013-12-04

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Toshiaki Fujita ,  Hiroshi Tanaka ,  Noriaki Nagatomo

IPC分类号： H01C7/00 ,  C30B25/06 ,  C30B29/60 ,  G01K7/22 ,  C30B29/38

CPC分类号： H01C7/008 ,  C23C14/0036 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/081 ,  C30B25/06 ,  C30B29/38 ,  C30B29/605 ,  G01K7/22 ,  H01C7/006 ,  H01C7/04 ,  H01C7/041

摘要： Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrxAly(N1-wOw)z (where 0.70≦y/(x+y)≦0.95, 0.45≦z≦0.55, 0

摘要翻译： 提供了一种用于热敏电阻的金属氮化物材料，其具有高可靠性和高耐热性，并且可以直接在不烧制的膜等上沉积，其制造方法和膜型热敏电阻传感器。 用于热敏电阻的金属氮化物材料由以下通式表示的金属氮化物组成：CrxAly（N1-wOw）z（其中0.70和nlE; y /（x + y）＆nlE; 0.95,0.45＆nlE; z和nlE; w＆nlE; 0.35和x + y + z = 1），其中其晶体结构是六方纤锌矿型单相。

公开(公告)号：US20150308013A1

公开(公告)日：2015-10-29

申请号：US14532387

申请日：2014-11-04

申请人： Rubicon Technology, Inc.

发明人： John P. CIRALDO ,  Jonathan B. LEVINE

IPC分类号： C30B23/02 ,  C30B23/08 ,  C30B25/06 ,  C30B25/18 ,  C30B29/20 ,  C30B29/68

CPC分类号： C30B23/025 ,  C30B23/08 ,  C30B25/06 ,  C30B25/183 ,  C30B29/20 ,  C30B29/68 ,  C30B33/06 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/28194 ,  H01L29/1054 ,  H01L29/511 ,  H01L29/517

摘要： A method for producing one or more free-standing aluminum oxide windows or laminates by using a substrate of aluminum oxide and one or more sacrificial layers that each separates one or more deposited aluminum oxide layer. The sacrificial layer may be decomposed to producing one or more a free-standing aluminum oxide windows. The free-standing windows or laminates are substantially in finished form requiring little or no post growth processing. The produced windows or laminates may be hard, scratch resistant net-shaped sapphire ready for use in cell phones, electronic devices, a tablet computer, watches, glass applications, or the like.

摘要翻译： 一种通过使用氧化铝衬底和一个或多个牺牲层来制造一个或多个独立的氧化铝窗或层压板的方法，每个牺牲层分离一个或多个沉积的氧化铝层。 牺牲层可能被分解以产生一个或多个独立的氧化铝窗口。 独立的窗户或层压板基本上是完成形式，需要很少或没有后生长处理。 生产的窗户或层压板可以是准备用于手机，电子设备，平板计算机，手表，玻璃应用等的硬的，耐划伤的网状蓝宝石。

公开(公告)号：US20150179430A1

公开(公告)日：2015-06-25

申请号：US14633639

申请日：2015-02-27

申请人： Oerlikon Advanced Technologies AG

发明人： Lorenzo Castaldi ,  Martin Kratzer ,  Heinz Felzer ,  Robert Mamazza, JR. ,  Bernd Heinz

IPC分类号： H01L21/02 ,  C30B29/40 ,  C30B25/18 ,  H01L21/3065 ,  C30B25/06

CPC分类号： H01L21/0254 ,  C30B25/06 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02631 ,  H01L21/02661 ,  H01L21/3065

摘要： A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminium film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminium film by a sputtering method under an atmosphere of Nitrogen and Argon.

摘要翻译： 提供了一种在衬底上沉积氮化铝层的方法，包括：提供硅衬底; 将基板放置在真空室中; 通过蚀刻来调节衬底的表面并提供调理表面; 在氩气气氛下通过溅射法在基板的调理表面上沉积铝膜，并在氮气和氩气氛下通过溅射法在铝膜上沉积外延氮化铝层。

公开(公告)号：US20150107988A1

公开(公告)日：2015-04-23

申请号：US14280975

申请日：2014-05-19

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI

IPC分类号： H01L21/02 ,  C30B29/22 ,  C30B25/06

CPC分类号： H01L21/02631 ,  C30B23/02 ,  C30B23/08 ,  C30B25/06 ,  C30B29/22 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02601 ,  H01L29/66969 ,  H01L29/785 ,  H01L29/7869 ,  H01L29/78696

摘要： A method for forming an oxide semiconductor film using a sputtering apparatus including a target containing a crystalline In—Ga—Zn oxide, a substrate, and a magnet includes the following steps: generating plasma between the target and the substrate; and separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order. The flat-plate-like In—Ga—Zn oxide passes through the plasma and thus is negatively charged. Then, while keeping crystallinity, the oxide gets close to a top surface of the substrate, moves over the top surface of the substrate due to a magnetic field of the magnet and current flowing from the substrate to the target, and then is deposited.

摘要翻译： 使用包括包含结晶In-Ga-Zn氧化物，基板和磁体的靶的溅射装置形成氧化物半导体膜的方法包括以下步骤：在靶和基板之间产生等离子体; 以及分离其中包含镓原子，锌原子和氧原子的第一层，包含铟原子和氧原子的第二层的平板状In-Ga-Zn氧化物，以及包括 镓原子，锌原子和氧原子按顺序堆叠。 平板状In-Ga-Zn氧化物通过等离子体，由此带负电。 然后，在保持结晶性的同时，氧化物接近基板的顶面，由于磁体的磁场和从基板流向目标物的电流而在基板的上表面上移动，然后沉积。

公开(公告)号：US08956952B2

公开(公告)日：2015-02-17

申请号：US13794327

申请日：2013-03-11

申请人： Tivra Corporation

发明人： Francisco Machuca ,  Indranil De

IPC分类号： H01L21/46 ,  H01L21/02 ,  C30B19/12 ,  C30B1/12 ,  C30B23/02 ,  C30B30/02 ,  C30B25/02 ,  C30B23/06 ,  C30B23/08 ,  C30B11/14 ,  C30B25/06 ,  C30B13/34 ,  C30B1/02 ,  H01L29/205 ,  C30B15/00 ,  C30B29/40 ,  C30B25/18

CPC分类号： C30B29/40 ,  C30B1/02 ,  C30B1/12 ,  C30B11/14 ,  C30B13/34 ,  C30B15/007 ,  C30B19/12 ,  C30B23/02 ,  C30B23/025 ,  C30B23/066 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B25/183 ,  C30B29/403 ,  C30B29/52 ,  C30B30/02 ,  H01L21/0237 ,  H01L21/02436 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/205

摘要： A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor.

摘要翻译： 多层衬底结构包括衬底，形成在衬底上的热匹配层和在热匹配层上方的晶格匹配层。 热匹配层包括钼，钼 - 铜，莫来石，蓝宝石，石墨，铝 - 氧氮化物，硅，碳化硅，氧化锌和稀土氧化物中的至少一种。 晶格匹配层包括第一化学元素和第二化学元素以形成合金。 第一和第二化学元素具有相似的晶体结构和化学性质。 热匹配层的热膨胀系数和晶格匹配层的晶格参数大致等于III-V族化合物半导体的成员的热膨胀系数。 晶格匹配层的晶格常数近似等于III-V族化合物半导体的晶格常数。