公开(公告)号：US20240347238A1

公开(公告)日：2024-10-17

申请号：US18294878

申请日：2022-07-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke SUETSUGU ,  Norimichi NOGUCHI ,  Nobutoshi TAKAGI ,  Hiroki ODA ,  Tatsuya URAKAWA

IPC: H01C17/00 ,  H01C7/00 ,  H01C7/06 ,  H01C17/12

CPC classification number: H01C17/006 ,  H01C7/006 ,  H01C7/06 ,  H01C17/12

Abstract: A chip resistor capable of achieving both high specific resistance, a low TCR is provided. A chip resistor includes: an insulating substrate; a resistive layer formed of an alloy containing Cr, Si, and N, the resistive layer being provided on the insulating substrate; and a first high-nitrogen-containing layer provided on the resistive layer, the first high-nitrogen-containing layer being made of an alloy having a N atomic percentage higher than a N atomic percentage of the resistive layer.

公开(公告)号：US12040268B2

公开(公告)日：2024-07-16

申请号：US17830196

申请日：2022-06-01

Applicant: QUALCOMM Incorporated

Inventor： Je-Hsiung Lan ,  Jonghae Kim ,  Kai Liu ,  Nosun Park

IPC: H01L23/522 ,  H01C7/00 ,  H01C17/075 ,  H01L23/66 ,  H01L49/02

CPC classification number: H01L23/5228 ,  H01C7/006 ,  H01C17/075 ,  H01L23/5226 ,  H01L23/66 ,  H01L28/10 ,  H01L28/24 ,  H01L2223/6672

Abstract: An integrated circuit (IC) includes a substrate and a thin film resistor (TFR) device structure. The TFR device structure includes a first portion of a first metallization layer and a second portion of the first metallization layer on the substrate. The TFR device structure also includes a first portion of a dielectric layer on the first portion of the first metallization layer and a second portion of the dielectric layer on the second portion of the first metallization layer. The TFR device structure further includes a first portion of a second metallization layer on the first portion of the dielectric layer and a second portion of the second metallization layer on the second portion of the dielectric layer. The TFR device structure also includes a first portion of a third metallization layer coupling the first portion of the second metallization layer to the second portion of the second metallization layer.

公开(公告)号：US20240120350A1

公开(公告)日：2024-04-11

申请号：US18391093

申请日：2023-12-20

Applicant: LG INNOTEK CO., LTD.

Inventor： Mark Allen ITZLER ,  Brian PICCIONE ,  Xudong JIANG ,  Krystyna SLOMKOWSKI

IPC: H01L27/144 ,  G01J1/44 ,  H01L31/02 ,  H01L31/107

CPC classification number: H01L27/1446 ,  G01J1/44 ,  H01L31/02027 ,  H01L31/107 ,  G01J2001/4466 ,  H01C7/006

Abstract: An image sensing device including a Geiger-mode avalanche photodiode (GmAPD), a read out integrated circuit (ROIC), and a limit resistor connected to the GmAPD and the ROIC in series, wherein the ROIC includes an active quenching circuit.

公开(公告)号：US11948967B2

公开(公告)日：2024-04-02

申请号：US17077329

申请日：2020-10-22

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Ding Li ,  Shuai Du ,  Yixing Chu

IPC: H01C7/00 ,  H01C1/14 ,  H01L49/02

CPC classification number: H01L28/24 ,  H01C1/14 ,  H01C7/006

Abstract: A polysilicon resistor is disclosed, to reduce a voltage coefficient of the polysilicon resistor. The polysilicon resistor includes: a polysilicon layer (101), a voltage module (102), and a substrate layer (103), where the voltage module (102) is configured to transmit a voltage on the polysilicon layer (101) to the substrate layer (103).

公开(公告)号：US11948709B2

公开(公告)日：2024-04-02

申请号：US17666716

申请日：2022-02-08

Applicant: Universities Space Research Association

Inventor： Jin-Woo Han ,  Meyya Meyyappan ,  Dong-Il Moon

IPC: H01C7/00 ,  H01C1/034 ,  H01C1/14

CPC classification number: H01C7/006 ,  H01C1/034 ,  H01C1/14

Abstract: An all-printed physically unclonable function based on a single-walled carbon nanotube network. The network may be a mixture of semiconducting and metallic nanotubes randomly tangled with each other through the printing process. The unique distribution of carbon nanotubes in a network can be used for authentication, and this feature can be a secret key for a high level hardware security. The carbon nanotube network does not require any advanced purification process, alignment of nanotubes, high-resolution lithography and patterning. Rather, the intrinsic randomness of carbon nanotubes is leveraged to provide the unclonable aspect.

公开(公告)号：US11862367B2

公开(公告)日：2024-01-02

申请号：US17643685

申请日：2021-12-10

Applicant: QUALCOMM Incorporated

Inventor： Jonghae Kim ,  Sang-June Park ,  Je-Hsiung Lan ,  Ranadeep Dutta

IPC: H01C7/00

CPC classification number: H01C7/006

Abstract: Disclosed is a sheet resistor designed to operate in a high frequency environment. Unlike conventional sheet resistors, the equivalent series inductance (ESL) is minimized or even eliminated altogether when using the designed sheet resistor. As a result, better signal isolation can be achieved.

公开(公告)号：US11824079B2

公开(公告)日：2023-11-21

申请号：US17233285

申请日：2021-04-16

Applicant: Microchip Technology Incorporated

Inventor： Yaojian Leng

IPC: H01C7/00 ,  H01L21/768 ,  H01L23/532 ,  H01L49/02

CPC classification number: H01L28/24 ,  H01C7/006 ,  H01L21/76807 ,  H01L23/53238

Abstract: A thin-film resistor (TFR) module is formed in an integrated circuit device. The TFR module includes a pair of metal TFR heads (e.g., copper damascene trench structures), a TFR element formed directly on the metal TFR heads to define a conductive path between the pair of TFR heads through the TFR element, and TFR contacts connected to the TFR heads. The TFR heads may be formed in a metal interconnect layer, along with various interconnect elements of the integrated circuit device. The TFR element may be formed by depositing and patterning a TFR element/diffusion barrier layer over the TFR heads and interconnect elements formed in the metal interconnect layer. The TFR element may be formed from a material that also provides a barrier against metal diffusion (e.g., copper diffusion) from each metal TFR head and interconnect element. For example, the TFR element may be formed from tantalum nitride (TaN).

公开(公告)号：US20230361159A1

公开(公告)日：2023-11-09

申请号：US17834065

申请日：2022-06-07

Applicant: Microchip Technology Incorporated

Inventor： Yaojian Leng

IPC: H01L49/02 ,  H01C7/00 ,  H01L27/01 ,  H01L23/522 ,  H01L21/768 ,  H01C17/075

CPC classification number: H01L28/24 ,  H01C7/006 ,  H01L27/016 ,  H01L23/5228 ,  H01L21/76816 ,  H01L21/76843 ,  H01C17/075

Abstract: A thin film resistor (TFR) module includes a metal cup structure, a dielectric liner region, a TFR element, and a pair of TFR heads electrically connected to the TFR element. The metal cup structure includes a laterally-extending metal cup base and multiple metal cup sidewalls extending upwardly from the laterally-extending metal cup base. The dielectric liner region is formed in an opening defined by the metal cup structure. The TFR element is formed in an opening defined by the dielectric liner region, wherein the TFR element is insulated from the metal cup structure by the dielectric liner region.

公开(公告)号：US20230326634A1

公开(公告)日：2023-10-12

申请号：US17716276

申请日：2022-04-08

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Chuan WANG ,  Chim Seng SEET ,  Yudi SETIAWAN

IPC: H01C7/00 ,  H01C17/08 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01C7/006 ,  H01C17/08 ,  H01L23/5283 ,  H01L23/5228 ,  H01L21/76802

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a thin film resistor and methods of manufacture. A structure includes: a thin film resistor having an opening and being between an upper insulator material and a lower insulator material; and a contact extending through the opening in the thin film resistor and into the lower insulator material.

公开(公告)号：US11765831B1

公开(公告)日：2023-09-19

申请号：US18120638

申请日：2023-03-13

Applicant: NOKIA SOLUTIONS AND NETWORKS OY

Inventor： Darrell Barabash ,  Abhijit Ghose ,  Joseph Smetana

IPC: H01C7/06 ,  H01C7/13 ,  H05K1/16 ,  H01C7/00

CPC classification number: H05K1/167 ,  H01C7/006

Abstract: According to an aspect, there is provided a printed circuit board-based resistive device. The resistive device comprises, arranged on a substrate of the printed circuit board of the printed circuit board: a first conductive pad; a second conductive pad; a resistive patch having a first longitudinal end connected to the first conductive pad and a second longitudinal end connected to the second conductive pad, wherein a width of the resistive patch varies along a length of the resistive patch and has a maximum at a point between the first and second longitudinal ends.