公开(公告)号：US20230411051A1

公开(公告)日：2023-12-21

申请号：US18247704

申请日：2021-10-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke SUETSUGU ,  Norimichi NOGUCHI ,  Tatsuya URAKAWA ,  Hiroki ODA ,  Daisuke UEYAMA

IPC: H01C1/142 ,  H01C7/00 ,  H01C17/12 ,  H01C17/00 ,  H01C17/28

CPC classification number: H01C1/142 ,  H01C7/006 ,  H01C17/288 ,  H01C17/006 ,  H01C17/12

Abstract: A chip resistor includes an insulating substrate, a resistance element, and an electrode. The resistance element includes Cr, Si, and N and is disposed on the insulating substrate. The electrode includes at least one refractory metal and is disposed on the resistance element. An atomic ratio of Si to Cr in the resistance element is greater than or equal to ⅔ and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element. An atom percentage of N in the resistance element is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction.

公开(公告)号：US20240347238A1

公开(公告)日：2024-10-17

申请号：US18294878

申请日：2022-07-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke SUETSUGU ,  Norimichi NOGUCHI ,  Nobutoshi TAKAGI ,  Hiroki ODA ,  Tatsuya URAKAWA

IPC: H01C17/00 ,  H01C7/00 ,  H01C7/06 ,  H01C17/12

CPC classification number: H01C17/006 ,  H01C7/006 ,  H01C7/06 ,  H01C17/12

Abstract: A chip resistor capable of achieving both high specific resistance, a low TCR is provided. A chip resistor includes: an insulating substrate; a resistive layer formed of an alloy containing Cr, Si, and N, the resistive layer being provided on the insulating substrate; and a first high-nitrogen-containing layer provided on the resistive layer, the first high-nitrogen-containing layer being made of an alloy having a N atomic percentage higher than a N atomic percentage of the resistive layer.