公开(公告)号：US20230411051A1

公开(公告)日：2023-12-21

申请号：US18247704

申请日：2021-10-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke SUETSUGU ,  Norimichi NOGUCHI ,  Tatsuya URAKAWA ,  Hiroki ODA ,  Daisuke UEYAMA

IPC: H01C1/142 ,  H01C7/00 ,  H01C17/12 ,  H01C17/00 ,  H01C17/28

CPC classification number: H01C1/142 ,  H01C7/006 ,  H01C17/288 ,  H01C17/006 ,  H01C17/12

Abstract: A chip resistor includes an insulating substrate, a resistance element, and an electrode. The resistance element includes Cr, Si, and N and is disposed on the insulating substrate. The electrode includes at least one refractory metal and is disposed on the resistance element. An atomic ratio of Si to Cr in the resistance element is greater than or equal to ⅔ and less than or equal to 4 at least at a center of the resistance element in a thickness direction defined with respect to the resistance element. An atom percentage of N in the resistance element is lower than or equal to 50 atom % at least at the center of the resistance element in the thickness direction.

公开(公告)号：US20240175764A1

公开(公告)日：2024-05-30

申请号：US18549305

申请日：2022-03-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Norimichi NOGUCHI ,  Daisuke SUETSUGU ,  Yuki OHYAMA ,  Kazuhiro KANDA ,  Yuji YASUOKA

IPC: G01K7/16

CPC classification number: G01K7/16

Abstract: A temperature sensor according to the present disclosure includes an alumina substrate, a planarization film, a first resistive portion, and at least one second resistive portion. The planarization film contains alumina as a main component thereof and is formed on the alumina substrate. The first resistive portion is formed on the planarization film. The at least one second resistive portion is formed on the planarization film and forms a bridge circuit along with the first resistive portion.

公开(公告)号：US20240347238A1

公开(公告)日：2024-10-17

申请号：US18294878

申请日：2022-07-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daisuke SUETSUGU ,  Norimichi NOGUCHI ,  Nobutoshi TAKAGI ,  Hiroki ODA ,  Tatsuya URAKAWA

IPC: H01C17/00 ,  H01C7/00 ,  H01C7/06 ,  H01C17/12

CPC classification number: H01C17/006 ,  H01C7/006 ,  H01C7/06 ,  H01C17/12

Abstract: A chip resistor capable of achieving both high specific resistance, a low TCR is provided. A chip resistor includes: an insulating substrate; a resistive layer formed of an alloy containing Cr, Si, and N, the resistive layer being provided on the insulating substrate; and a first high-nitrogen-containing layer provided on the resistive layer, the first high-nitrogen-containing layer being made of an alloy having a N atomic percentage higher than a N atomic percentage of the resistive layer.