公开(公告)号：US12040268B2

公开(公告)日：2024-07-16

申请号：US17830196

申请日：2022-06-01

申请人： QUALCOMM Incorporated

发明人： Je-Hsiung Lan ,  Jonghae Kim ,  Kai Liu ,  Nosun Park

IPC分类号： H01L23/522 ,  H01C7/00 ,  H01C17/075 ,  H01L23/66 ,  H01L49/02

CPC分类号： H01L23/5228 ,  H01C7/006 ,  H01C17/075 ,  H01L23/5226 ,  H01L23/66 ,  H01L28/10 ,  H01L28/24 ,  H01L2223/6672

摘要： An integrated circuit (IC) includes a substrate and a thin film resistor (TFR) device structure. The TFR device structure includes a first portion of a first metallization layer and a second portion of the first metallization layer on the substrate. The TFR device structure also includes a first portion of a dielectric layer on the first portion of the first metallization layer and a second portion of the dielectric layer on the second portion of the first metallization layer. The TFR device structure further includes a first portion of a second metallization layer on the first portion of the dielectric layer and a second portion of the second metallization layer on the second portion of the dielectric layer. The TFR device structure also includes a first portion of a third metallization layer coupling the first portion of the second metallization layer to the second portion of the second metallization layer.

公开(公告)号：US11967444B2

公开(公告)日：2024-04-23

申请号：US17636286

申请日：2020-09-15

申请人： TDK Electronics AG

发明人： Jan Ihle ,  Thomas Bernert ,  Gerald Kloiber

IPC分类号： H01C7/04 ,  G01K7/22 ,  H01C1/14 ,  H01C17/075

CPC分类号： H01C7/041 ,  G01K7/22 ,  H01C1/1413 ,  H01C7/048 ,  H01C17/075

摘要： In an embodiment a sensor element includes at least one carrier layer having a top side and an underside and at least one functional layer, wherein the functional layer is arranged at the top side of the carrier layer and includes a material having a temperature-dependent electrical resistance, wherein the sensor element is configured to be integrated as a discrete component directly into an electrical system, and wherein the sensor element is configured to measure a temperature.

公开(公告)号：US20230361159A1

公开(公告)日：2023-11-09

申请号：US17834065

申请日：2022-06-07

申请人： Microchip Technology Incorporated

发明人： Yaojian Leng

IPC分类号： H01L49/02 ,  H01C7/00 ,  H01L27/01 ,  H01L23/522 ,  H01L21/768 ,  H01C17/075

CPC分类号： H01L28/24 ,  H01C7/006 ,  H01L27/016 ,  H01L23/5228 ,  H01L21/76816 ,  H01L21/76843 ,  H01C17/075

摘要： A thin film resistor (TFR) module includes a metal cup structure, a dielectric liner region, a TFR element, and a pair of TFR heads electrically connected to the TFR element. The metal cup structure includes a laterally-extending metal cup base and multiple metal cup sidewalls extending upwardly from the laterally-extending metal cup base. The dielectric liner region is formed in an opening defined by the metal cup structure. The TFR element is formed in an opening defined by the dielectric liner region, wherein the TFR element is insulated from the metal cup structure by the dielectric liner region.

公开(公告)号：US09991330B1

公开(公告)日：2018-06-05

申请号：US15403946

申请日：2017-01-11

申请人： International Business Machines Corporation

发明人： Daniel C. Edelstein ,  Chih-Chao Yang

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L49/02 ,  H01C17/075 ,  H01C7/00 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/321 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

CPC分类号： H01L28/24 ,  H01C7/006 ,  H01C17/075 ,  H01L21/02183 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/76802 ,  H01L21/76823 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5228 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329

摘要： The present application provides planar and stacked resistor structures that are embedded within an interconnect dielectric material in which the resistivity of an electrical conducting resistive material or electrical conducting resistive materials of the resistor structure can be tuned to a desired resistivity during the manufacturing of the resistor structure. Notably, a doped metallic insulator layer is formed atop a substrate. A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material layer. The remaining doped metallic insulator layer and the electrical conducting resistive material layer are then patterned to provide the resistor structure.

公开(公告)号：US20180040396A1

公开(公告)日：2018-02-08

申请号：US15346567

申请日：2016-11-08

申请人： NATIONAL PINGTUNG UNIVERSITY OF SCIENCE & TECHNOLOGY

发明人： Ying-Chieh LEE

IPC分类号： H01C7/00 ,  C22C19/05 ,  H01C17/12

CPC分类号： H01C7/006 ,  C22C19/05 ,  H01C7/06 ,  H01C17/075 ,  H01C17/12

摘要： A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.

公开(公告)号：US09736888B2

公开(公告)日：2017-08-15

申请号：US14656220

申请日：2015-03-12

申请人： The Boeing Company

发明人： Jeffrey L. Duce ,  Joseph A. Marshall, IV ,  Ashley House ,  Jason Turner

IPC分类号： H05B1/02 ,  F24H9/18 ,  F24D13/02 ,  H05B3/20 ,  H01C17/02 ,  H01C17/075 ,  H05B3/18 ,  H05B3/06 ,  H05B3/34

CPC分类号： H05B1/0236 ,  F24D13/022 ,  F24D2200/08 ,  F24D2220/2081 ,  F24H9/1872 ,  H01C17/02 ,  H01C17/075 ,  H05B1/0238 ,  H05B3/06 ,  H05B3/18 ,  H05B3/20 ,  H05B3/34 ,  H05B2203/013 ,  H05B2203/017 ,  H05B2203/02 ,  H05B2203/026 ,  H05B2203/029 ,  H05B2206/023 ,  Y02B30/26

摘要： Described herein is a composite panel that includes a first layer made from an electrically non-conductive material. The composite panel also includes a resistance heater printed onto the first layer. Further, the composite panel includes a second layer adjacent the resistance heater, the resistance heater being positioned between the first layer and the second layer. The second layer is made from an electrically non-conductive material.

公开(公告)号：US09659691B2

公开(公告)日：2017-05-23

申请号：US14111932

申请日：2013-07-09

申请人： SEMITEC Corporation

发明人： Kenji Ito ,  Tadashi Toyoda

IPC分类号： H01C7/10 ,  H01C7/04 ,  C22F1/14 ,  H01C17/075

CPC分类号： H01C7/041 ,  C22F1/14 ,  H01C7/04 ,  H01C17/075

摘要： Provided is a thin-film thermistor element including a Si substrate 2, a thermistor thin film 5 formed on the Si substrate 2, and an electrode 3 made of platinum, an alloy thereof or the like and formed on, under or inside the thermistor thin film 5. The electrode 3 is formed from a film deposited containing oxygen and nitrogen and then crystallized by heat treatment.

公开(公告)号：US20170064774A1

公开(公告)日：2017-03-02

申请号：US15351347

申请日：2016-11-14

申请人： KOREA ELECTRONICS TECHNOLOGY INSTITUTE

发明人： Yoonjin KIM ,  Jinwoo CHO

IPC分类号： H05B3/14 ,  H01C17/075 ,  H05B3/46

CPC分类号： H05B3/14 ,  H01C17/065 ,  H01C17/0652 ,  H01C17/06586 ,  H01C17/06593 ,  H01C17/075 ,  H05B3/0095 ,  H05B3/145 ,  H05B3/262 ,  H05B3/46 ,  H05B2203/013 ,  H05B2203/017 ,  H05B2214/04

摘要： A heating paste composition, and a sheet heating element, a heating roller, a heating unit and a heating module, which use the composition, are disclosed. In one aspect, the heating paste composition includes 0.2 parts to 6 parts by weight of carbon nanotube particles, 0.5 parts to 30 parts by weight of graphite particles, 5 parts to 30 parts by weight of a binder mixture, 29 parts to 80 parts by weight of an organic solvent and 0.5 parts to 5 parts by weight of a dispersant, wherein the weights are with respect to 100 parts by weight of the heating paste composition.

摘要翻译： 公开了一种使用该组合物的加热糊组合物，片加热元件，加热辊，加热单元和加热模块。 一方面，加热糊组合物包含0.2〜6重量份的碳纳米管颗粒，0.5〜30重量份的石墨颗粒，5〜30重量份的粘合剂混合物，29〜80重量份 有机溶剂的重量和0.5〜5重量份的分散剂，其中重量相对于加热糊组合物100重量份。

公开(公告)号：US20150069574A1

公开(公告)日：2015-03-12

申请号：US14019986

申请日：2013-09-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Yuan-Tai TSENG ,  Ming-Chyi LIU ,  Chung-Yen CHOU ,  Chia-Shiung TSAI

IPC分类号： H01L49/02 ,  H01L21/70

CPC分类号： H01L23/485 ,  H01C7/006 ,  H01C17/075 ,  H01L21/707 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76895 ,  H01L23/5228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A novel integrated circuit and method thereof are provided. The integrated circuit includes a plurality of first interconnect pads, a plurality of second interconnect pads, a first inter-level dielectric layer, a thin film resistor, and at least two end-caps. The end-caps, which are connectors for the thin film resistor, are positioned at the same level with the plurality of second interconnect pads. Therefore, an electrical connection between the end-caps and the plurality of second interconnect pads can be formed by directly connection of them. An integrated circuit with a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

摘要翻译： 提供了一种新颖的集成电路及其方法。 集成电路包括多个第一互连焊盘，多个第二互连焊盘，第一层间电介质层，薄膜电阻器和至少两个端盖。 作为薄膜电阻器的连接器的端盖与多个第二互连焊盘定位在相同的高度。 因此，端盖与多个第二互连焊盘之间的电连接可以通过它们直接连接而形成。 因此，可以以成本有益的方式制造具有薄膜电阻器的集成电路，以克服上述缺点。

公开(公告)号：US08921799B2

公开(公告)日：2014-12-30

申请号：US13525067

申请日：2012-06-15

申请人： Jeffrey W. Elam ,  Anil U. Mane

发明人： Jeffrey W. Elam ,  Anil U. Mane

IPC分类号： G01T3/00

CPC分类号： H01C17/075 ,  C23C16/30 ,  C23C16/45531 ,  H01C7/006

摘要： A method and article of manufacture of intermixed tunable resistance composite materials. A conducting material and an insulating material are deposited by such methods as ALD or CVD to construct composites with intermixed materials which do not have structure or properties like their bulk counterparts.

摘要翻译： 混合可调电阻复合材料的制备方法和制造方法。 导电材料和绝缘材料通过诸如ALD或CVD的方法沉积，以构建不具有其体积对应物的结构或性质的混合材料的复合材料。