公开(公告)号：US20180247860A1

公开(公告)日：2018-08-30

申请号：US15754003

申请日：2016-08-22

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Toru ISHIZUKA ,  Masatake NAKANO

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/322 ,  H01L27/12

CPC classification number: H01L21/76254 ,  C30B15/007 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/02008 ,  H01L21/02236 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203

Abstract: A method for producing a bonded SOI wafer by bonding a bond wafer and a base wafer, each being formed of a silicon single crystal, together with a silicon oxide film placed therebetween, the method including: preparing, as the base wafer, a silicon single crystal wafer whose resistivity is 100 ∩·cm or more and initial interstitial oxygen concentration is 10 ppma or less; forming, on the front surface of the base wafer, a silicon oxide film by performing, on the base wafer, heat treatment in an oxidizing atmosphere at a temperature of 700° C. or higher and 1000° C. or lower for 5 hours or more; bonding the base wafer and the bond wafer together with the silicon oxide film placed therebetween; and thinning the bonded bond wafer to form an SOI layer.

公开(公告)号：US09464364B2

公开(公告)日：2016-10-11

申请号：US13292410

申请日：2011-11-09

Applicant: Frederick M. Carlson ,  Brian T. Helenbrook

Inventor： Frederick M. Carlson ,  Brian T. Helenbrook

IPC: C30B15/30 ,  C30B29/06 ,  C30B15/00 ,  C30B15/06 ,  C30B15/14 ,  C30B15/22

CPC classification number: C30B15/06 ,  C30B15/007 ,  C30B15/14 ,  C30B15/206 ,  C30B15/22 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  Y10T117/1024

Abstract: An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

Abstract translation: 公开了一种用于生长包括热源，各向异性热负荷调平部件，坩埚和冷板部件的硅晶体基板的设备。 各向异性热负荷均衡部件具有高导热性，并且可以放置在热源顶部，以适应于平衡来自热源的温度和热通量变化。 坩埚可以操作以容纳熔融硅，其中熔融硅的顶表面可以被定义为生长界面。 坩埚可以基本上被各向异性热负荷调平部件包围。 冷板组件可以位于坩埚上方以与各向异性热负荷调平组件和热源一起工作以在熔融硅的生长表面处保持均匀的热通量。

公开(公告)号：US09419167B2

公开(公告)日：2016-08-16

申请号：US13990498

申请日：2011-12-01

Applicant: Ralf Jonczyk ,  Emanuel M. Sachs

Inventor： Ralf Jonczyk ,  Emanuel M. Sachs

IPC: C30B29/06 ,  C30B28/10 ,  H01L21/20 ,  C30B11/00 ,  H01L31/18 ,  H01L21/02 ,  C04B41/50 ,  C04B41/45 ,  C30B15/00 ,  C30B15/32 ,  C30B21/06

CPC classification number: H01L31/182 ,  C04B41/4539 ,  C04B41/5096 ,  C30B11/002 ,  C30B15/00 ,  C30B15/007 ,  C30B15/32 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02532 ,  H01L31/1804 ,  Y02E10/546 ,  Y02P70/521

Abstract: An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. It may be secured to the forming surface or deposited upon the melt. The interposer sheet suppresses grain nucleation, and limits heat flow from the melt. It promotes separation of the semiconductor body from the forming surface. It can be fabricated before its use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. The interposer sheet and semiconductor body are free to expand and contract relatively independently of the forming surface.

Abstract translation: 插入片可用于制造诸如硅的半导体本体，例如用于太阳能电池。 它是独立的，非常薄的，柔性的，多孔的并且能够耐受熔融半导体的化学和热环境而不降解。 它通常是陶瓷材料，例如二氧化硅，氮化硅，氮氧化硅，碳氧化硅，碳化硅，碳氮化硅，碳氮氧化硅等。 设置在模板的成形表面和将形成半导体本体的熔融材料之间。 它可以固定到成形表面或沉积在熔体上。 插入片抑制晶粒成核，并限制来自熔体的热流。 它促进半导体主体与成形表面的分离。 它可以在使用之前进行制造。 由于独立且不粘附到成型表面，CTE的失配问题被最小化。 插入片和半导体本体相对于成形表面相对自由地膨胀和收缩。

公开(公告)号：US08956952B2

公开(公告)日：2015-02-17

申请号：US13794327

申请日：2013-03-11

Applicant: Tivra Corporation

Inventor： Francisco Machuca ,  Indranil De

IPC: H01L21/46 ,  H01L21/02 ,  C30B19/12 ,  C30B1/12 ,  C30B23/02 ,  C30B30/02 ,  C30B25/02 ,  C30B23/06 ,  C30B23/08 ,  C30B11/14 ,  C30B25/06 ,  C30B13/34 ,  C30B1/02 ,  H01L29/205 ,  C30B15/00 ,  C30B29/40 ,  C30B25/18

CPC classification number: C30B29/40 ,  C30B1/02 ,  C30B1/12 ,  C30B11/14 ,  C30B13/34 ,  C30B15/007 ,  C30B19/12 ,  C30B23/02 ,  C30B23/025 ,  C30B23/066 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B25/183 ,  C30B29/403 ,  C30B29/52 ,  C30B30/02 ,  H01L21/0237 ,  H01L21/02436 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/205

Abstract: A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor.

Abstract translation: 多层衬底结构包括衬底，形成在衬底上的热匹配层和在热匹配层上方的晶格匹配层。 热匹配层包括钼，钼 - 铜，莫来石，蓝宝石，石墨，铝 - 氧氮化物，硅，碳化硅，氧化锌和稀土氧化物中的至少一种。 晶格匹配层包括第一化学元素和第二化学元素以形成合金。 第一和第二化学元素具有相似的晶体结构和化学性质。 热匹配层的热膨胀系数和晶格匹配层的晶格参数大致等于III-V族化合物半导体的成员的热膨胀系数。 晶格匹配层的晶格常数近似等于III-V族化合物半导体的晶格常数。

公开(公告)号：US08591795B2

公开(公告)日：2013-11-26

申请号：US12631054

申请日：2009-12-04

Applicant: Prantik Mazumder ,  Balram Suman

Inventor： Prantik Mazumder ,  Balram Suman

IPC: C30B28/04

CPC classification number: C30B15/007 ,  C30B11/00 ,  C30B19/062 ,  C30B29/06

Abstract: A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.

Abstract translation: 制造半导体材料制品的方法包括选择制品的目标厚度，然后将模具浸入熔融半导体材料中以便浸入时间有效地在模具的外表面上形成半导体材料的固体层，其中 固体层的厚度基本上等于目标厚度。 浸入时间被选择为基本上等于转变时间，其从具有特定属性的模具的实心层厚度对浸没时间的图确定，包括模具成分，模具厚度和初始模具温度。 过渡时间，从而浸没时间对应于固体层厚度对于特定模具的固体层厚度与浸没时间曲线的最大值。

公开(公告)号：US08540920B2

公开(公告)日：2013-09-24

申请号：US12466104

申请日：2009-05-14

Applicant: Prantik Mazumder ,  Sergey Potapenko ,  Natesan Venkataraman

Inventor： Prantik Mazumder ,  Sergey Potapenko ,  Natesan Venkataraman

IPC: B29D7/00 ,  C01B33/00 ,  C04B35/00

CPC classification number: C30B28/04 ,  C30B15/007 ,  C30B28/10 ,  C30B29/06

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract translation: 本发明涉及制造由此形成的半导体材料制品和半导体材料制品的方法，例如可用于制造光伏电池的半导体材料制品。

公开(公告)号：US20120288418A1

公开(公告)日：2012-11-15

申请号：US13304497

申请日：2011-11-25

Applicant: JIN SEOK LEE ,  BO YUN JANG ,  YOUNG SOO AHN

Inventor： JIN SEOK LEE ,  BO YUN JANG ,  YOUNG SOO AHN

IPC: C30B35/00

CPC classification number: C30B15/007 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002

Abstract: A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.

Abstract translation: 公开了一种用于硅熔化的双坩埚和包括其的硅薄膜的制造装置。 用于硅熔化的双坩埚包括形成为容器形状的石墨坩埚，其具有形成在其中的出口部分的开口顶部和底部，以排出硅熔体，所述石墨坩埚包括被配置为连接出口部分和内部 彼此相对于出口部分的顶表面具有预定斜率的壁和与石墨坩埚相对应地插入地连接到石墨坩埚的石英坩埚，石英坩埚具有硅基底 填充的材料。

公开(公告)号：US08256373B2

公开(公告)日：2012-09-04

申请号：US10584698

申请日：2004-12-10

Applicant: Christian Belouet ,  Claude Remy

Inventor： Christian Belouet ,  Claude Remy

IPC: B05C3/12

CPC classification number: C30B15/007 ,  C23C2/006 ,  C30B28/10 ,  C30B29/06

Abstract: The present invention relates to a device (100) for depositing a layer based on polycrystalline silicon onto a substantially plane, elongate, moving support (4) having two longitudinal faces (43, 44) and two longitudinal side edges (41, 42), the device comprising: a crucible (1) containing a bath (2) of molten silicon, said support (4) being designed to be dipped at least in part in the bath and to pass substantially vertically in its long direction through the equilibrium surface (21) of the bath; and at least one edge control element (5, 5′), each edge control element being maintained substantially vertically close to one of the two longitudinal side edges (41, 42); each edge control element comprising walls (51 to 53′) defining a longitudinal slot (54, 54′) beside the corresponding longitudinal side edge, each slot being dipped in part in the bath (2) so as to raise the level of the bath by capillarity in the vicinity of the corresponding longitudinal side edge, the device being characterized in that at least one of the walls (51 to 52′), referred to as an “insertion” wall, facing part of one of the longitudinal faces, is substantially plane.

Abstract translation: 本发明涉及一种用于将基于多晶硅的层沉积到具有两个纵向面（43,44）和两个纵向侧边缘（41,42）的大致平面，细长的移动支撑件（4）上的装置（100） 该装置包括：含有熔融硅浴槽（2）的坩埚（1），所述支撑件（4）被设计成至少部分地浸入浴中并且在其长方向上基本垂直地穿过平衡表面（ 21）洗澡; 和至少一个边缘控制元件（5,5'），每个边缘控制元件基本垂直地保持靠近所述两个纵向侧边缘（41,42）中的一个; 每个边缘控制元件包括在对应的纵向侧边缘旁边限定纵向狭槽（54,54'）的壁（51至53'），每个槽部分地浸入浴槽（2）中，以便提高浴缸的水平 通过相应的纵向侧边缘附近的毛细作用，该装置的特征在于，面向纵向面之一的称为“插入”壁的壁（51至52'）中的至少一个是 基本上平面。

公开(公告)号：US20110280784A1

公开(公告)日：2011-11-17

申请号：US13129313

申请日：2009-11-13

Applicant: Birger Erik Ydstie ,  Sudhir Ranjan ,  Balaji Sukumar ,  Sridhar Seetharaman

Inventor： Birger Erik Ydstie ,  Sudhir Ranjan ,  Balaji Sukumar ,  Sridhar Seetharaman

IPC: C01B33/02 ,  C30B35/00 ,  C30B11/02

CPC classification number: B22D11/01 ,  C01B33/037 ,  C30B15/002 ,  C30B15/007 ,  C30B15/06 ,  C30B15/14 ,  C30B15/22 ,  C30B15/28 ,  C30B15/30 ,  C30B29/06 ,  C30B29/60 ,  C30B29/64 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

Abstract: A method for producing a solid layer material (42), comprising providing (70) a first layer (30); providing (72) a second liquid layer (32) on the first layer (30); providing (74) a third liquid layer (34) on the second liquid layer (32), wherein the third liquid layer has a melting point that is higher than a melting point of the second liquid layer, and wherein the second liquid layer is between the first and third layers; cooling (76) a surface of the third liquid layer to a temperature less than the melting point of the third liquid layer; forming (78) the solid layer from the third liquid layer while cooling the third layer liquid; and removing (80) the solid layer.

Abstract translation: 一种制备固体层材料的方法，包括提供（70）第一层（30）; 在第一层（30）上提供（72）第二液体层（32）; 在所述第二液体层（32）上提供（74）第三液体层（34），其中所述第三液体层具有高于所述第二液体层的熔点的熔点，并且其中所述第二液体层在 第一和第三层; 将第三液体层的表面冷却（76）至低于第三液体层的熔点的温度; 在冷却第三层液体的同时，从第三液体层形成（78）固体层; 并去除（80）固体层。

公开(公告)号：US20110256377A1

公开(公告)日：2011-10-20

申请号：US12948019

申请日：2010-11-17

Applicant: Shivkumar Chiruvolu ,  Neeraj Pakala ,  Scott Ferguson ,  Kieran Drain

Inventor： Shivkumar Chiruvolu ,  Neeraj Pakala ,  Scott Ferguson ,  Kieran Drain

IPC: B32B9/00 ,  H01L21/225 ,  B32B37/00 ,  B05C5/00 ,  C23C16/00 ,  H01L21/31 ,  B05B13/02

CPC classification number: H01L31/1804 ,  C30B15/007 ,  C30B15/04 ,  C30B15/24 ,  C30B25/00 ,  C30B29/06 ,  H01L31/042 ,  H01L31/048 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: Photovoltaic elements can be formed by in-motion processing of a silicon ribbon. In some embodiments, only a single surface of a silicon ribbon is processed in-motion. In other embodiments both surfaces of a silicon ribbon is processed in-motion. In-motion processing can include, but is not limited to, formation of patterned or uniform doped regions within or along the silicon ribbon as well as the formation of patterned or uniform dielectric layers and/or electrically conductive elements on the silicon ribbon. After performing in-motion processing, additional processing steps can be performed after the ribbon is cut into portions. Furthermore, post-cut processing can include, but is not limited to, the formation of solar cells, photovoltaic modules, and solar panels.

Abstract translation: 可以通过硅带的运动内处理来形成光伏元件。 在一些实施例中，只有硅带的单个表面被运动地处理。 在其它实施例中，硅带的两个表面被运动地处理。 运动内处理可以包括但不限于在硅带内或沿着硅带形成图案化或均匀的掺杂区，以及在硅带上形成图案化或均匀的电介质层和/或导电元件。 在执行运动处理之后，可以在色带被切割成部分之后执行附加的处理步骤。 此外，后切割处理可以包括但不限于形成太阳能电池，光伏模块和太阳能电池板。