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公开(公告)号:US20220195623A1
公开(公告)日:2022-06-23
申请号:US17338152
申请日:2021-06-03
Applicant: Linton Kayex Technology Co., Ltd
Inventor: Jiaqi YIN , John A. REESE , Joel C. STEFL
Abstract: A crystal growing system can include a spool-balanced seed lift assembly for rotating and lifting a seed crystal supported by a cable. The seed crystal is supported along and rotated about a lift axis. The spool-balanced seed lift assembly includes a spool that rotates on, and has a center of gravity along, an axis that intersects the lift axis. As the spool rotates, it moves axially along its axis to avoid displacing the cable from the lift axis. A guide pulley positioned below the spool is used to direct the cable between the lift axis and a spool-tangent axis to minimize displacement of the cable as it is raised and rotated.
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2.
公开(公告)号:US20200080225A1
公开(公告)日:2020-03-12
申请号:US16682624
申请日:2019-11-13
Applicant: GlobalWafers Co., Ltd.
Inventor: Seok Min Yun , Seong Su Park , Jun Hwan Ji , Won-Jin Choi , UiSung Jung , Young Jung Lee , Tae Su Koo , Sung-Jin Kim
IPC: C30B15/02 , G01S19/13 , G01S11/02 , B66D1/12 , B64G1/64 , B64G1/58 , C30B35/00 , C30B30/04 , C30B15/32 , C30B15/20 , C30B29/06
Abstract: A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.
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3.
公开(公告)号:US20170191182A1
公开(公告)日:2017-07-06
申请号:US15399390
申请日:2017-01-05
Inventor: Parthiv Daggolu , Benjamin Michael Meyer , William L. Luter , Soubir Basak , Sumeet S. Bhagavat , Nan Zhang , Gaurab Samanta
Abstract: Crystal pulling systems for growing monocrystalline ingots from a melt of semiconductor or solar-grade material are described. The crystal pulling systems include seed chuck assemblies designed to reduce formation of deposits on components of the crystal pulling systems by reducing and inhibiting the formation of gas flow recirculation cells within the crystal pulling systems.
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公开(公告)号:US09657407B2
公开(公告)日:2017-05-23
申请号:US14522640
申请日:2014-10-24
Applicant: Siemens Medical Solutions USA, Inc.
Inventor: Mark S. Andreaco , James L. Corbeil , Brant Quinton , Troy Marlar , Ronald Nutt
CPC classification number: C30B15/00 , C30B13/285 , C30B15/28 , C30B15/30 , C30B15/32 , C30B29/34 , C30B35/00 , Y10T117/1004
Abstract: A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale.
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公开(公告)号:US6139633A
公开(公告)日:2000-10-31
申请号:US254087
申请日:1999-03-01
Applicant: Kiyofumi Nishiura
Inventor: Kiyofumi Nishiura
CPC classification number: C30B15/32 , C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
Abstract: Apparatus for pulling a single crystal of this invention is suitable as a silicon single crystal pulling technology that meets the needs for increased efficiency in the manufacture of semiconductors and can thus be utilized in the field of manufacturing semiconductors. The apparatus includes pulling means for forming an engaging stepped portion on a single crystal and a holding mechanism for gripping the engaging stepped portion of the single crystal. As the weight of the single crystal increases as the single crystal pulling operation proceeds, the apparatus causes the holding mechanism to start holding the single crystal before the weight of the single crystal reaches the limit of a load that can be borne by the dash neck portion. As a result of such construction, even when pulling a single crystal that is heavy, the apparatus can engage and grip such single crystal reliably, thereby implementing safe production of single crystals free from falling accidents.
Abstract translation: PCT No.PCT / JP97 / 03042 Sec。 371日期1999年3月1日 102(e)1999年3月1日PCT 1997年8月29日PCT PCT。 公开号WO98 / 10125 1998年3月12日提交本发明的单晶拉制装置适用于满足半导体制造效率提高的需要的硅单晶拉制技术,因此可用于制造半导体领域。 该装置包括用于在单晶上形成接合阶梯部分的拉动装置和用于夹持单晶的接合阶梯部分的保持机构。 随着单晶拉制操作的进行,随着单晶的重量的增加,装置使得保持机构在单晶的重量达到可由破折号颈部承载的载荷的极限之前开始保持单晶 。 作为这种结构的结果,即使在拉出重的单晶时,该装置可以可靠地接合和夹持这样的单晶,从而实现单晶的安全生产而没有下落的事故。
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公开(公告)号:US5833750A
公开(公告)日:1998-11-10
申请号:US760984
申请日:1996-12-05
Applicant: Kouji Mizuishi , Shigemaru Maeda
Inventor: Kouji Mizuishi , Shigemaru Maeda
CPC classification number: C30B15/32 , Y10S117/911 , Y10T117/10 , Y10T117/1072
Abstract: A crystal pulling apparatus is disclosed in which a single crystal ingot is pulled from a melt of a crystalline material by using a cable. A crimp portion and a spherical portion supported by the crimp portion are provided in the vicinity of the tip of the cable. Two divided couplings are screwed into a chuck body of a seed chuck. The couplings have an accommodation space therein so as to accommodate the cable and the spherical portion, and conical hole sections serving as the shoulder portion of the accommodation space contact and hold the spherical portion. This structure allows the cable to rotate during crystal pulling operation and facilitates attachment of the seed chuck to the cable and removal of the seed chuck from the cable.
Abstract translation: 公开了一种拉晶装置,其中通过使用电缆将单晶锭从结晶材料的熔体中拉出。 在电缆的尖端附近设置有由压接部支撑的卷曲部分和球形部分。 将两个分开的联接器拧入种子卡盘的卡盘体中。 联接器在其中具有容纳电缆和球形部分的容纳空间,并且用作容纳空间的肩部的锥形孔部分接触并保持球形部分。 这种结构允许电缆在晶体拉动操作期间旋转,并且便于将种子卡盘附接到电缆并且从电缆去除种子卡盘。
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公开(公告)号:US5602081A
公开(公告)日:1997-02-11
申请号:US240068
申请日:1994-05-09
Applicant: Masaru Nakamura , Yasuji Yamada , Minoru Tagami , Yuh Shiohara , Shoji Tanaka
Inventor: Masaru Nakamura , Yasuji Yamada , Minoru Tagami , Yuh Shiohara , Shoji Tanaka
CPC classification number: C30B29/225 , C30B15/32 , Y10S505/729
Abstract: A method of preparing a crystal of a Y-series 123 metal oxide is disclosed, in which a substrate is immersed in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different from the position at which the substrate contacts the liquid phase. The solid phase provides the liquid phase with solutes which constitute the Y-series 123 metal oxide so that the solutes are transported to the position at which the substrate and the liquid phase contact, thereby permitting the Y-series 123 metal oxide to grow on the substrate as primary crystals.
Abstract translation: 公开了一种制备Y系123金属氧化物晶体的方法,其中将基片浸入包含构成金属氧化物的组分的液相中。 液相包含位于不同于基板与液相接触的位置的位置的固相。 固相为构成Y系123金属氧化物的溶质提供液相,使得溶质输送到基板和液相接触的位置,从而允许Y系列123金属氧化物在 底物作为主要晶体。
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公开(公告)号:US5406905A
公开(公告)日:1995-04-18
申请号:US69123
申请日:1993-05-28
Applicant: Mengistu Yemane-Berhane , Bruce L. Colburn
Inventor: Mengistu Yemane-Berhane , Bruce L. Colburn
CPC classification number: C30B29/06 , C30B15/04 , Y10S117/911
Abstract: A dopant (76), such as antimony, is cast around a seed crystal (10) to form a seed-dopant assembly (14) that facilitates doping of a molten semiconductor (36), such as silicon, in a crystal-growing furnace (34). To grow a doped ingot, the seed-dopant assembly is held in a relatively cool part of the furnace while the semiconductor is melted. When the semiconductor melt is ready for doping, the seed-dopant assembly is lowered to a position just above the melt. Heat transferred to the seed dopant assembly from the melt causes the dopant to drop off the seed into the molten semiconductor without splashing and without immersing the seed.
Abstract translation: 将诸如锑的掺杂剂(76)浇铸在晶种(10)周围以形成种子掺杂剂组件(14),其有助于在晶体生长炉中掺杂诸如硅的熔融半导体(36),例如硅 (34)。 为了生长掺杂的锭,当半导体熔化时,种子 - 掺杂剂组件被保持在炉子的相对较冷的部分中。 当半导体熔体准备进行掺杂时,种子 - 掺杂剂组件被降低到刚好在熔体上方的位置。 从熔体转移到种子掺杂剂组合物的热量使得掺杂剂从籽晶中脱落而不飞溅并且不浸没种子。
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公开(公告)号:US4738832A
公开(公告)日:1988-04-19
申请号:US719362
申请日:1985-04-03
Applicant: Dieter Drechsel
Inventor: Dieter Drechsel
IPC: C30B15/30 , C30B15/32 , H01L21/02 , H01L21/208 , B01D9/00
CPC classification number: C30B15/32 , C30B15/30 , Y10S117/911 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
Abstract: A crystal holder for apparatus for pulling a crystal from a melt in a crucible with a reelable pulling member fastened to the crystal holder has thermal insulation between the fastener for the reelable pulling member and a clamping device for the crystal. The thermal insulation preferably comprises a tie rod between sections of the crystal holder, the tie rod having a cross section sufficiently smaller than the sections for insulation therebetween, an insulating spacer about the tie rod, and radiation shields about the spacer, the radiation shields having diameters no longer than the sections of the crystal holder. Foil insulation spaced about the crystal holder at the crystal clamp may also be provided. The insulation appreciably extends the life of the pulling member.
Abstract translation: 用于将坩埚中的熔体中的晶体从坩埚中熔化的晶体保持器固定到晶体保持器上的可卷绕的拉动构件在用于可卷绕牵引构件的紧固件和用于晶体的夹紧装置之间具有热绝缘性。 绝热件优选地包括在晶体保持器的部分之间的拉杆,拉杆具有足够小于用于绝缘的部分的横截面,围绕拉杆的绝缘隔板以及围绕间隔件的辐射屏蔽,辐射屏蔽具有 直径不超过晶体支架的截面。 还可以提供在晶体夹具处围绕晶体保持器间隔开的箔绝缘体。 绝缘可以显着地延长拉伸件的使用寿命。
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公开(公告)号:US4613486A
公开(公告)日:1986-09-23
申请号:US618158
申请日:1984-06-07
Applicant: Masayoshi Tatsumi , Toshihiro Kotani
Inventor: Masayoshi Tatsumi , Toshihiro Kotani
CPC classification number: C30B15/32 , Y10S117/90 , Y10T117/1068 , Y10T117/1072
Abstract: A single-crystal boule pulling rod for pulling a boule from a melt utilizing the Czochralski method including a main pulling rod and a heat insulating layer surrounding the main pulling rod. The main pulling rod, which may be either bar-shaped or composed of two concentric pipes, is forcibly cooled. Preferably, a pipe made of molybdenum or stainless steel is provided around the heat insulating material.
Abstract translation: 一种用于使用包括主拉杆和围绕主拉杆的隔热层的切克劳斯基法从熔体拉出毛坯的单晶棒状拉杆。 可以是棒状的或由两个同心管组成的主拉杆被强制冷却。 优选地,在绝热材料的周围设置由钼或不锈钢制成的管。
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