公开(公告)号：US11739439B2

公开(公告)日：2023-08-29

申请号：US17865873

申请日：2022-07-15

Applicant: Linton Crystal Technologies Corp.

Inventor： Richard D. Webb ,  John A. Reese ,  Brian M. Repman ,  Joel C. Stefl

IPC: C30B25/14 ,  C30B35/00 ,  C30B23/00 ,  C30B27/02 ,  C30B29/16

CPC classification number: C30B35/007 ,  C30B23/00 ,  C30B25/14 ,  C30B27/02 ,  C30B29/16 ,  C30B35/002

Abstract: A vacuum system for silicon crystal growth includes a silicon crystal growth chamber, a first vacuum pipe, a second vacuum pipe, and an oxides container. The first vacuum pipe is coupled to the chamber and has within a first brush that is movable in a first direction for removing internal oxides. The second vacuum pipe is coupled to the first vacuum pipe for receiving the internal oxides via the first brush and has within a second brush that is movable in a second direction different from the first direction. The second brush transports the received internal oxides away from the first vacuum pipe. The oxides container is coupled to the second vacuum pipe for receiving the internal oxides via the second brush.

公开(公告)号：US11371164B2

公开(公告)日：2022-06-28

申请号：US16499165

申请日：2017-11-09

Applicant: JX NIPPON MINING & METALS CORPORATION

Inventor： Akira Noda ,  Keita Kawahira ,  Ryuichi Hirano

IPC: C30B15/14 ,  C30B29/40 ,  C30B15/20 ,  C30B27/02

Abstract: Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm−3 or more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200° C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm−3 or more.

公开(公告)号：US20210108335A1

公开(公告)日：2021-04-15

申请号：US16499165

申请日：2017-11-09

Applicant: JX NIPPON MINING & METALS CORPORATION

Inventor： Akira NODA ,  Keita KAWAHIRA ,  Ryuichi HIRANO

IPC: C30B29/40 ,  C30B15/14 ,  C30B27/02 ,  C30B15/20

Abstract: Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm−3 or more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200° C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm−3 or more.

公开(公告)号：US20200291543A1

公开(公告)日：2020-09-17

申请号：US16354488

申请日：2019-03-15

Applicant: Linton Crystal Technologies Corporation

Inventor： Richard D. Webb ,  John A. Reese ,  Brian M. Repman ,  Joel C. Stefl

IPC: C30B35/00 ,  C30B23/00 ,  C30B29/16 ,  C30B27/02 ,  C30B25/14

Abstract: A vacuum system for silicon crystal growth includes a silicon crystal growth chamber, a first vacuum pipe, a second vacuum pipe, and an oxides container. The first vacuum pipe is coupled to the chamber and has within a first brush that is movable in a first direction for removing internal oxides. The second vacuum pipe is coupled to the first vacuum pipe for receiving the internal oxides via the first brush and has within a second brush that is movable in a second direction different from the first direction. The second brush transports the received internal oxides away from the first vacuum pipe. The oxides container is coupled to the second vacuum pipe for receiving the internal oxides via the second brush.

公开(公告)号：US20180102446A1

公开(公告)日：2018-04-12

申请号：US15837971

申请日：2017-12-11

Applicant: JX NIPPON MINING & METALS CORPORATION

Inventor： Akira NODA ,  Masaru OTA ,  Ryuichi HIRANO

IPC: H01L31/0304 ,  C30B15/04 ,  C30B29/42 ,  C30B15/22 ,  C30B27/02 ,  H01L31/18 ,  C30B15/20 ,  C30B29/40 ,  H01L31/0735 ,  C30B15/30

CPC classification number: H01L31/03042 ,  C30B15/04 ,  C30B15/20 ,  C30B15/203 ,  C30B15/22 ,  C30B15/30 ,  C30B27/02 ,  C30B29/40 ,  C30B29/42 ,  H01L31/0735 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

Abstract: In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm−2 can be obtained, despite having a low average zinc concentration of 5×1017 cm−3 to 3×1018 cm−3, at which a crystal hardening effect does not manifest.

公开(公告)号：US08815010B2

公开(公告)日：2014-08-26

申请号：US11587698

申请日：2005-02-15

Applicant: Akira Noda ,  Ryuichi Hirano

Inventor： Akira Noda ,  Ryuichi Hirano

IPC: C01B25/08 ,  C30B15/10 ,  C30B27/02 ,  C01B25/00 ,  C30B15/00

CPC classification number: C30B27/02 ,  C30B15/00 ,  C30B15/22 ,  C30B29/40

Abstract: A method for producing a low-dislocation InP single crystal suitably used for an optical device such as a semiconductor laser, and the low-dislocation InP single crystal wafer are provided. In a liquid-encapsulated Czochralski method in which a semiconductor raw material and an encapsulant are contained in a raw material melt containing part comprising a cylindrical crucible having a bottom, the raw material containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25° C./cm or less and setting a temperature-fall amount to 0.25° C./hr or more. Thus, an iron-doped or undoped InP single crystal wafer in which an area having a dislocation density of 500/cm2 or less occupies 70% or more is realized.

Abstract translation: 提供适合用于半导体激光器等光学元件的低位错InP单晶的制造方法和低位错InP单晶晶片。 在包含具有底部的圆柱形坩埚的原料熔融物的部件中含有半导体原料和密封剂的液体封装的切克劳斯法中，加热含有原料的部分，使原料熔融， 在被密封剂覆盖的状态下与原料的熔体的表面接触以在晶种升高的同时生长晶体; 通过将晶体生长方向的温度梯度设定为25℃/ cm以下，将温度下降量设定为0.25℃/小时以上，从晶种生长晶面部。 因此，实现了具有500 / cm 2以下的位错密度的面积占70％以上的铁掺杂或未掺杂的InP单晶晶片。

公开(公告)号：US08801854B2

公开(公告)日：2014-08-12

申请号：US13913732

申请日：2013-06-10

Applicant: Shunji Kuragaki

Inventor： Shunji Kuragaki

IPC: C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B29/06

Abstract: A method for evaluating metal contamination of a silicon single crystal grown by the Czochralski method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible comprises the steps of: setting the crystal suspending member as a negative electrode while setting the crucible as a positive electrode in a process for growing a non-convertible portion of the silicon single crystal; applying the voltage; collecting a sample from the non-convertible portion grown in association with the voltage application; and evaluating the metal contamination of the sample by an analysis in which Surface Photo Voltage method is adopted. In a process for growing an end-product convertible portion of the silicon single crystal, the voltage is applied such that the crystal suspending member is set as the positive electrode while the crucible is set as the negative electrode, or the voltage is not applied.

Abstract translation: 一种用于通过使用可在晶体悬挂构件和坩埚之间施加电压的拉制装置的切克劳斯基法生长的单晶硅的金属污染物的方法包括以下步骤：将晶体悬挂构件设置为负极，同时 在用于生长硅单晶的不可转换部分的工艺中将坩埚设置为正极; 施加电压; 从与电压施加相关联地生长的不可转换部分收集样品; 并通过采用表面光电压法的分析来评估样品的金属污染。 在生长硅单晶的最终产品可转换部分的过程中，施加电压，使得将晶体悬挂构件设定为正极，同时将坩埚设定为负极，或施加电压。

公开(公告)号：US08771415B2

公开(公告)日：2014-07-08

申请号：US12604627

申请日：2009-10-23

Applicant: Shigeru Umeno ,  Keiichiro Hiraki ,  Hiroaki Taguchi

Inventor： Shigeru Umeno ,  Keiichiro Hiraki ,  Hiroaki Taguchi

IPC: C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C01B33/02

CPC classification number: C30B29/06 ,  C30B15/00 ,  C30B15/20 ,  C30B33/12

Abstract: By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A silicon single crystal ingot that does not include a COP and a dislocation cluster is grown by a CZ method, a silicon wafer is sliced from the silicon single crystal ingot, reactive ion etching is performed on the silicon wafer in an as-grown state, and a grown-in defect including silicon oxide is exposed as a protrusion on an etching surface. A growing condition in subsequent growing is fed back and adjusted on the basis of an exposed protrusion generation region. As a result, feedback with respect to a nearest batch can be performed without performing heat treatment to expose a defect.

Abstract translation: 通过在不使用OSF区域的位置或宽度作为指标的情况下确定提升速度的控制方向，反馈并调整随后的上拉速度分布。 通过CZ法生长不含有COP和位错簇的硅单晶锭，从硅单晶锭切片硅晶片，以生长状态对硅晶片进行反应离子蚀刻， 并且包括氧化硅的生长缺陷作为突起暴露在蚀刻表面上。 随后生长中的生长状况基于暴露的突起产生区域被反馈并调整。 因此，可以在不执行热处理以暴露缺陷的情况下执行关于最近批次的反馈。

公开(公告)号：US08500905B2

公开(公告)日：2013-08-06

申请号：US13344498

申请日：2012-01-05

Applicant: Jong Kwan Park

Inventor： Jong Kwan Park

IPC: C30B17/00 ,  C30B15/00 ,  C30B9/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B11/00 ,  C30B28/06 ,  C30B35/00 ,  C30B29/20

CPC classification number: C30B17/00 ,  C30B9/00 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/06 ,  C30B28/10 ,  C30B29/20 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1092

Abstract: Disclosed is a sapphire single crystal growing apparatus using the Kyropoulos method, and more particularly, is a Kyropoulos sapphire single crystal growing apparatus using an elliptic crucible, which can increase the recovery rate by the elliptic crucible and anisotropic heating.

Abstract translation: 公开了使用Kyropoulos方法的蓝宝石单晶生长装置，更具体地，是使用椭圆形坩埚的Kyropoulos蓝宝石单晶生长装置，其可以通过椭圆形坩埚提高回收率和各向异性加热。

公开(公告)号：US08337615B2

公开(公告)日：2012-12-25

申请号：US11910683

申请日：2006-04-04

Applicant: Nikolai Abrosimov ,  Anke Luedge ,  Andris Muiznieks ,  Helge Riemann

Inventor： Nikolai Abrosimov ,  Anke Luedge ,  Andris Muiznieks ,  Helge Riemann

IPC: C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC classification number: C30B13/30 ,  C30B13/20 ,  C30B29/06 ,  Y10T428/24479

Abstract: A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.

Abstract translation: 制造具有近似多边形横截面且具有与区域拉伸的Si晶体相同的材料性质的单晶Si晶片和单晶Si晶片的方法。 该方法包括从旋转的悬挂熔滴垂直向下拉动晶体的至少一个瓶颈。 晶体的旋转速度降低到0至小于1rpm。 在晶体生长阶段，Si单晶锭以大致多边形横截面垂直向下拉。 使用电感器在与拉出的Si单晶锭的截面形状相对应的晶体的生长相界面处产生温度分布。 生长以期望的拉伸长度结束，并且将Si单晶锭切割成具有大致多边形横截面的晶片。