公开(公告)号：US20250019863A1

公开(公告)日：2025-01-16

申请号：US18714387

申请日：2022-10-25

Applicant: SUMCO Corporation

Inventor： Atsuhiro YAMADA ,  Ryota SUEWAKA

IPC: C30B30/04 ,  C30B15/00 ,  C30B29/06 ,  H01F7/06 ,  H01F7/20

Abstract: To provide a magnet for a single crystal production apparatus in which the degree of freedom in the design of the magnetic field distribution is enhanced even when the arrangement of coils composing the magnet of a single crystal production apparatus is restricted. A magnet for a single crystal production apparatus that pulls up a single crystal while applying a horizontal magnetic field to a material melt for the single crystal received in a crucible, the magnet applying the horizontal magnetic field in the single crystal production apparatus, the magnet including four or more coils 2, the ratio of the height to the width of at least one of the four or more coils 2 exceeding 1, and a control unit that enables the four or more coils 2 to generate magnetic fields independently of each other.

公开(公告)号：US20240247402A1

公开(公告)日：2024-07-25

申请号：US18626962

申请日：2024-04-04

Applicant: GlobalWafers Co., Ltd.

Inventor： Gaurab Samanta ,  Parthiv Daggolu ,  Sumeet Bhagavat ,  Soubir Basak ,  Nan Zhang

IPC: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B15/10 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

Abstract: A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

公开(公告)号：US20240076800A1

公开(公告)日：2024-03-07

申请号：US18272253

申请日：2021-11-22

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Hiroyuki KAMADA ,  Kiyotaka TAKANO

IPC: C30B30/04 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B30/04 ,  C30B15/20 ,  C30B29/06

Abstract: A single crystal pulling apparatus includes: a pulling furnace having a central axis; and magnetic field generating apparatus around the pulling furnace and having coils, for applying a horizontal magnetic field to molten semiconductor raw material to suppress convection in crucible, in which, main coils and sub-coils are provided, as the main coils, two pairs of coils arranged facing each other are provided, two coil axes thereof are included in the same horizontal plane, a center angle α between the two coil axes sandwiching the X-axis, which is a magnetic force line direction on the central axis in the horizontal plane, is 100 degrees or more and 120 degrees or less, as the sub-coils, a pair of superconducting coils arranged to face each other is provided and its one coil axis is aligned with the X-axis, and current values of the main coils and the sub-coils can be set independently.

公开(公告)号：US20240060208A1

公开(公告)日：2024-02-22

申请号：US18269423

申请日：2021-11-05

Applicant: SUMCO CORPORATION

Inventor： Ryusuke YOKOYAMA ,  Wataru SUGIMURA

IPC: C30B15/14 ,  C30B29/06 ,  C30B30/04

CPC classification number: C30B15/14 ,  C30B29/06 ,  C30B30/04

Abstract: A heating portion heats a silicon melt in a quartz crucible. The heating portion includes: a heat generation portion integrally molded into a cylinder; and four power supply portions for supplying electric power to the heat generation portion. When the heating portion is divided by a virtual plane into two including a first heating region located on one side of the heat generation portion and a second heating region located on the other side of the heat generation portion with respect to the virtual plane, the virtual plane passing through a center axis of the heat generation portion and being perpendicular to the heat generation portion and parallel to a central magnetic field line of a horizontal magnetic field applied to the silicon melt, a heat generation amount of the first heating region and a heat generation amount of the second heating region are set to different values.

公开(公告)号：US20230175166A1

公开(公告)日：2023-06-08

申请号：US17605399

申请日：2020-03-19

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Kiyotaka TAKANO ,  Wataru YAJIMA ,  Kosei SUGAWARA ,  Hiroyuki KAMADA ,  Tomohiko OHTA

IPC: C30B15/20 ,  C30B30/04 ,  C30B29/06

CPC classification number: C30B15/20 ,  C30B30/04 ,  C30B29/06

Abstract: The present invention is a single-crystal pulling apparatus including: a pulling furnace which has a heater and a crucible arranged and which has a central axis; and a magnetic field generation device having superconducting coils, where the magnetic field generation device has four of the superconducting coils, two of the superconducting coils are arranged in each of two regions divided by a cross section that includes an X axis, the X axis being a direction of lines of magnetic force at the central axis in the horizontal plane including all the coil axes of the four superconducting coils, and includes the central axis of the pulling furnace so as to have line symmetry about the cross section, the four superconducting coils are all arranged so that the coil axes have an angle within a range of more than −30° and less than 30° relative to a Y axis, the direction of the lines of magnetic force thereof have line symmetry about the cross section, and in each of the regions, the two superconducting coils generate lines of magnetic force in opposite directions. This provides a single-crystal pulling apparatus with which there is no need to move the magnetic field generation device when dismantling and setting up the single-crystal pulling apparatus, and the oxygen concentration in the single crystal to be grown can be reduced, and at the same time, growth striations in the single crystal to be grown can be suppressed.

公开(公告)号：US20230045854A1

公开(公告)日：2023-02-16

申请号：US17794108

申请日：2021-01-21

Applicant: The Regents of the University of Colorado, a body corporate

Inventor： Gang Cao

IPC: C30B13/30 ,  C30B13/24 ,  C30B30/04 ,  C30B29/22

Abstract: Various embodiments include a device for producing structurally modified materials. In some embodiments, the device includes a floating zone furnace which holds a feed rod in contact with seed crystal. One or more laser diodes are then used to heat a portion of the feed rod and cause it to transition to a molten state. A magnetic field is applied to the floating zone to change the underlying crystal structure of the material as it solidifies upon exiting the floating zone. In some instances, the changes may include manipulating the bond angle of the crystal structure or altering the unit cell volume of the crystal. Changes in the crystal structure directly affect the electrical resistivity and/or the magnetization and other physical properties of the crystal.

公开(公告)号：US20220290323A1

公开(公告)日：2022-09-15

申请号：US17640054

申请日：2020-08-20

Applicant: SUMCO CORPORATION

Inventor： Norihito FUKATSU ,  Ryusuke YOKOYAMA

IPC: C30B15/04 ,  C30B29/06 ,  C30B30/04

Abstract: There is provided a growing method for monocrystalline silicon by a Czochralski process, the method including: pulling the monocrystalline silicon while rotating the monocrystalline silicon; and dropping a granular dopant onto a liquid surface of a silicon melt while a straight body of the monocrystalline silicon is being pulled, in which in the dropping of the dopant, a dropping position of the granular dopant is set above a region where a flow away from the straight body is dominant in the liquid surface of the silicon melt.

公开(公告)号：US20220220631A9

公开(公告)日：2022-07-14

申请号：US16839808

申请日：2020-04-03

Applicant: GlobalWafers Co., Ltd.

Inventor： Tapas Jain ,  Sumeet S. Bhagavat ,  Zheng Lu ,  Feng-Chien Tsai ,  Hong-Huei Huang

IPC: C30B15/22 ,  C30B15/14 ,  C30B30/04 ,  C30B29/06 ,  C30B15/20

Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

公开(公告)号：US20220213619A1

公开(公告)日：2022-07-07

申请号：US17569098

申请日：2022-01-05

Applicant: POSTECH Research and Business Development Foundation

Inventor： Unyong JEONG ,  Giri ANUPAM ,  Geonwoo KIM ,  Ghorai ARUP

IPC: C30B29/46 ,  C30B30/04 ,  C30B7/14 ,  H01L21/02

Abstract: Provided is a method for forming a chalcogenide thin film, the method including forming a chalcogen element-containing film on a carrier substrate, disposing the chalcogen element-containing film on a silicon wafer, wherein the surface of the silicon wafer and the surface of the chalcogen element-containing film are in contact with each other, performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time, and removing the carrier substrate. The silicon wafer has a crystal plane of (111).

公开(公告)号：US20220205136A1

公开(公告)日：2022-06-30

申请号：US17196288

申请日：2021-03-09

Applicant: Zing Semiconductor Corporation

Inventor： Weimin SHEN ,  Youshu LEI

IPC: C30B30/04 ,  C30B15/10 ,  C30B15/14 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06

Abstract: A crystal growth method and a crystal growth apparatus are disclosed in the present application. The crystal growth method comprises maintaining rotating of a crucible and meanwhile applying a horizontal magnetic field to silicon melt in the crucible during crystal growth. As and/or after changing magnetic field strength of the horizontal magnetic field, temperature fluctuation may easily occur at a solid-liquid interface of an ingot and the silicon melt. Through changing crucible rotating speed to change forced convection of the silicon melt, the temperature fluctuation at solid-liquid interface, caused by the changing of the magnetic field strength, may be rapidly reduced to stabilize diameter of the ingot.