公开(公告)号：US20240003046A1

公开(公告)日：2024-01-04

申请号：US18037802

申请日：2021-11-01

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Keisuke MIHARA ,  Kazuya YANASE ,  Nobuaki MITAMURA ,  Kiyotaka TAKANO

IPC: C30B15/14 ,  C30B29/06 ,  C30B15/10

CPC classification number: C30B15/14 ,  C30B15/10 ,  C30B29/06

Abstract: A single crystal manufacturing including: main chamber; pulling chamber; thermal shield member provided so as to face a silicon melt; rectifying cylinder provided on the thermal shield member so as to enclose the silicon single crystal being pulled up; cooling cylinder provided so as to encircle the silicon single crystal being pulled up and including an extending portion extending toward the silicon melt; and cooling auxiliary cylinder fitted to inside of the cooling cylinder. The extending portion of the cooling cylinder includes a bottom surface facing the silicon melt. The cooling auxiliary cylinder includes at least a first portion surrounding the bottom surface of the cooling cylinder and a second portion surrounding an upper end portion of the rectifying cylinder. This enables provision of the apparatus capable of manufacturing a single crystal with a carbon concentration lower than that according to the conventional technologies.

公开(公告)号：US20240141548A1

公开(公告)日：2024-05-02

申请号：US18281176

申请日：2022-01-28

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Kiyotaka TAKANO ,  Hiroyuki KAMADA

IPC: C30B15/20 ,  C30B29/06 ,  C30B30/04

CPC classification number: C30B15/20 ,  C30B29/06 ,  C30B30/04

Abstract: The present invention is a single crystal pulling apparatus which includes a pulling furnace having a central axis and a magnetic field generating apparatus having coils, and applies a horizontal magnetic field to a molten semiconductor raw material, wherein the coils are saddle-shaped, two pairs of the coils are provided with the coils of each pair arranged facing each other, two coil axes in the two pairs of coils are included in the same horizontal plane, when a magnetic force line direction on the central axis of the pulling furnace in the horizontal plane is defined as a X-axis, and a direction perpendicular to the X-axis in the horizontal plane is defined as a Y-axis, a center angle α between the two coil axes sandwiching the X-axis is 90 degrees or less and an inter-coil angle β between adjacent superconducting coils sandwiching the Y-axis is 20 degrees or less. As a result, the coil height can be reduced by increasing the magnetic field generation efficiency, the magnetic field center can be raised to near the melt surface of the semiconductor raw material, and it is possible to provide a single crystal pulling apparatus and a single crystal pulling method capable of pulling a single crystal with an even lower oxygen concentration than before and a defect-free crystal at a higher speed can be obtained.

公开(公告)号：US20230138632A1

公开(公告)日：2023-05-04

申请号：US17907875

申请日：2021-02-22

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Kiyotaka TAKANO ,  Kosei SUGAWARA ,  Hiroyuki KAMADA ,  Takahide ONAI ,  Tomohiko OHTA

IPC: C30B30/04 ,  C30B15/20

Abstract: A single-crystal pulling apparatus including: a pulling furnace having a central axis; and a magnetic field generation device arranged around the pulling furnace and having superconducting coils, the apparatus applying a horizontal magnetic field to the molten semiconductor raw material, two coil axes in the two pairs of the superconducting coils are included in a single horizontal plane, and when a direction of lines of magnetic force at the central axis of the pulling furnace in the horizontal plane is determined as an X axis, a center angle α having the X axis between the two coil axes is 100 degrees or more and 120 degrees or less. This makes it possible to reduce the height of the coils, to raise the magnetic field center close to the melt surface of the semiconductor raw material, and to obtain a single crystal having a lower oxygen concentration than conventional single crystals.

公开(公告)号：US20240076800A1

公开(公告)日：2024-03-07

申请号：US18272253

申请日：2021-11-22

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Hiroyuki KAMADA ,  Kiyotaka TAKANO

IPC: C30B30/04 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B30/04 ,  C30B15/20 ,  C30B29/06

Abstract: A single crystal pulling apparatus includes: a pulling furnace having a central axis; and magnetic field generating apparatus around the pulling furnace and having coils, for applying a horizontal magnetic field to molten semiconductor raw material to suppress convection in crucible, in which, main coils and sub-coils are provided, as the main coils, two pairs of coils arranged facing each other are provided, two coil axes thereof are included in the same horizontal plane, a center angle α between the two coil axes sandwiching the X-axis, which is a magnetic force line direction on the central axis in the horizontal plane, is 100 degrees or more and 120 degrees or less, as the sub-coils, a pair of superconducting coils arranged to face each other is provided and its one coil axis is aligned with the X-axis, and current values of the main coils and the sub-coils can be set independently.

公开(公告)号：US20230175166A1

公开(公告)日：2023-06-08

申请号：US17605399

申请日：2020-03-19

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Kiyotaka TAKANO ,  Wataru YAJIMA ,  Kosei SUGAWARA ,  Hiroyuki KAMADA ,  Tomohiko OHTA

IPC: C30B15/20 ,  C30B30/04 ,  C30B29/06

CPC classification number: C30B15/20 ,  C30B30/04 ,  C30B29/06

Abstract: The present invention is a single-crystal pulling apparatus including: a pulling furnace which has a heater and a crucible arranged and which has a central axis; and a magnetic field generation device having superconducting coils, where the magnetic field generation device has four of the superconducting coils, two of the superconducting coils are arranged in each of two regions divided by a cross section that includes an X axis, the X axis being a direction of lines of magnetic force at the central axis in the horizontal plane including all the coil axes of the four superconducting coils, and includes the central axis of the pulling furnace so as to have line symmetry about the cross section, the four superconducting coils are all arranged so that the coil axes have an angle within a range of more than −30° and less than 30° relative to a Y axis, the direction of the lines of magnetic force thereof have line symmetry about the cross section, and in each of the regions, the two superconducting coils generate lines of magnetic force in opposite directions. This provides a single-crystal pulling apparatus with which there is no need to move the magnetic field generation device when dismantling and setting up the single-crystal pulling apparatus, and the oxygen concentration in the single crystal to be grown can be reduced, and at the same time, growth striations in the single crystal to be grown can be suppressed.

公开(公告)号：US20180237940A1

公开(公告)日：2018-08-23

申请号：US15758023

申请日：2016-08-23

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Kiyotaka TAKANO

IPC: C30B15/30 ,  C30B15/14 ,  C30B30/04 ,  H01F6/04 ,  H01F6/06

CPC classification number: C30B15/305 ,  C30B15/14 ,  C30B29/06 ,  C30B29/42 ,  C30B30/04 ,  H01F6/04 ,  H01F6/06

Abstract: A single-crystal pulling apparatus including a pulling furnace containing a crucible containing molten single crystal material, and a magnetic field generation device that is arranged around the furnace, has superconducting coils, and generates a magnetic field distribution. A magnetic flux density distribution on an X axis, which is a direction of magnetic force lines at the central axis in a horizontal plane, is a convex upward distribution, and a magnetic flux density on the X axis becomes 80% or less of a magnetic flux density set value at a crucible wall. Simultaneously, a magnetic flux density distribution on a Y axis, orthogonal to the X axis, is a convex downward distribution, and a magnetic flux density on the Y axis becomes 140% or more of the set value at the crucible wall when the magnetic flux density at the central axis in the horizontal plane is the set value.

公开(公告)号：US20170260645A1

公开(公告)日：2017-09-14

申请号：US15503949

申请日：2015-08-14

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Ryoji HOSHI ,  Hiroyuki KAMADA ,  Kiyotaka TAKANO

IPC: C30B15/04 ,  H01L29/739 ,  H01L29/167 ,  C30B15/20 ,  C30B29/06

CPC classification number: C30B15/04 ,  C30B15/20 ,  C30B29/06 ,  H01L29/167 ,  H01L29/7393

Abstract: A method controls a resistivity of a grown silicon single crystal by using a dopant when the silicon single crystal is grown by CZ method, including the steps of initially doping with a primary dopant such that the silicon single crystal has a predetermined conductive type and additionally doping with a secondary dopant having a conductive type opposite to that of the primary dopant continuously or intermittently, according to a solidification rate expressed by (crystalized weight)/(initial weight of silicon raw material) while growing the silicon single crystal, wherein in the additional doping step, the additional doping with the secondary dopant is carried out when the solidification rate is a predetermined value α or more, while the crystal is not doped with the secondary dopant until the solidification rate reaches the predetermined value α.