公开(公告)号：US20210222321A1

公开(公告)日：2021-07-22

申请号：US17269197

申请日：2019-06-10

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Ryoji HOSHI ,  Keisuke MIHARA ,  Kousei SUGAWARA ,  Suguru MATSUMOTO

IPC: C30B15/00 ,  C30B29/06

Abstract: A method for growing a single crystal according to a Czochralski method (CZ method) or a magnetic field applied CZ method (MCZ method), the method including: a first step of obtaining a melt by melting a silicon raw material loaded in a crucible; a second step of forming a solidified layer by solidifying a part of the melt; a third step of removing at least a part of the melt in a state where the solidified layer and the melt coexist; a fourth step of obtaining a melt by melting the solidified layer; and a fifth step of growing a silicon single crystal from the melt. Consequently, a method for purifying a silicon raw material and growing a single crystal on one CZ pulling apparatus and growing a single crystal with a reduced impurity concentration is provided.

公开(公告)号：US20240328029A1

公开(公告)日：2024-10-03

申请号：US18576638

申请日：2022-07-28

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Keisuke MIHARA

IPC: C30B15/22 ,  C30B29/06 ,  C30B30/04

CPC classification number: C30B15/22 ,  C30B29/06 ,  C30B30/04

Abstract: The present invention provides a method for producing a silicon single crystal by a CZ method using a cusp magnetic field formed by an upper coil and a lower coil provided in a pulling furnace, the method includes seeding by bringing a seed crystal into contact with a silicon melt, and pulling up of a straight body after enlarging a diameter of the silicon single crystal, in which the seeding is performed with a magnetic field minimum plane position on a central axis of the pulling furnace as a first position below a surface of the silicon melt, before proceeding to the pulling up of the straight body, the magnetic field minimum plane position on the central axis of the pulling furnace is moved to a second position above the first position, the pulling up of the straight body is performed with the magnetic field minimum plane position on the central axis of the pulling furnace as the second position. This provides the method for producing the silicon single crystal that efficiently produces the single crystal having low oxygen concentration and excellent in-plane distribution with an improved success rate of the seeding.

公开(公告)号：US20240355620A1

公开(公告)日：2024-10-24

申请号：US18713455

申请日：2022-10-25

Applicant: SHIN-ETSU HANDOTAI CO., LTD

Inventor： Ippei KUBONO ,  Keitaro TSUCHIYA ,  Kazunori HAGIMOTO ,  Keisuke MIHARA ,  Kosei SUGAWARA

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/786

CPC classification number: H01L21/02389 ,  H01L21/0242 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7869

Abstract: A nitride semiconductor substrate includes: a silicon single-crystal substrate; and a nitride semiconductor thin film formed on the silicon single-crystal substrate, wherein the silicon single-crystal substrate has a carbon concentration of 5E16 atoms/cm3 or more and 2E17 atoms/cm3 or less. This provides a nitride semiconductor substrate resistant against plastic deformation and a manufacturing method therefor.

公开(公告)号：US20240003046A1

公开(公告)日：2024-01-04

申请号：US18037802

申请日：2021-11-01

Applicant: SHIN-ETSU HANDOTAI CO., LTD.

Inventor： Keisuke MIHARA ,  Kazuya YANASE ,  Nobuaki MITAMURA ,  Kiyotaka TAKANO

IPC: C30B15/14 ,  C30B29/06 ,  C30B15/10

CPC classification number: C30B15/14 ,  C30B15/10 ,  C30B29/06

Abstract: A single crystal manufacturing including: main chamber; pulling chamber; thermal shield member provided so as to face a silicon melt; rectifying cylinder provided on the thermal shield member so as to enclose the silicon single crystal being pulled up; cooling cylinder provided so as to encircle the silicon single crystal being pulled up and including an extending portion extending toward the silicon melt; and cooling auxiliary cylinder fitted to inside of the cooling cylinder. The extending portion of the cooling cylinder includes a bottom surface facing the silicon melt. The cooling auxiliary cylinder includes at least a first portion surrounding the bottom surface of the cooling cylinder and a second portion surrounding an upper end portion of the rectifying cylinder. This enables provision of the apparatus capable of manufacturing a single crystal with a carbon concentration lower than that according to the conventional technologies.