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公开(公告)号：US20240263342A1
公开(公告)日：2024-08-08
申请号：US18290167
申请日：2022-02-28
CPC分类号： C30B15/10 , C30B15/002 , C30B15/20
摘要： The present invention is an apparatus for manufacturing a single crystal by growing a single crystal according to a Czochralski method, the apparatus includes a main chamber configured to house a crucible configured to accommodate a raw-material melt and a heater configured to heat the raw-material melt, a pulling chamber being continuously provided at an upper portion of the main chamber and configured to accommodate a single crystal grown and pulled, and a cooling cylinder extends from at least a ceiling portion of the main chamber toward a surface of the raw material melt to surround the single crystal being pulled. The cooling cylinder is configured to be forcibly cooled with a coolant. The apparatus includes a first auxiliary cooling cylinder fitted inside of the cooling cylinder, and a second auxiliary cooling cylinder threadedly connected to the outside of the first auxiliary cooling cylinder from a side of a lower end. A gap between a bottom surface of the cooling cylinder and a top surface of the second auxiliary cooling cylinder is 0 mm or more to 1.0 mm or less. This provides an apparatus for manufacturing a single crystal which can increase growth rate of the single crystal by efficiently cooling the single crystal being grown.
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公开(公告)号：US20150360959A1
公开(公告)日：2015-12-17
申请号：US14763966
申请日：2014-01-30
发明人： Ryoji HOSHI , Suguru MATSUMOTO , Yoshitaka AOKI , Chinami MATSUI
IPC分类号： C01B31/36
CPC分类号： C01B32/956 , C30B15/14 , C30B29/06 , C30B29/36
摘要： The present invention provides a method of producing silicon carbide, comprising: providing a silicon-crystal producing apparatus with a carbon heater; forming a silicon carbide by-product on a surface of the carbon heater when a silicon crystal is produced from a silicon melt contained in a container heated by the carbon heater under a non-oxidizing atmosphere; and collecting the silicon carbide by-product to produce the silicon carbide. A method that can produce silicon carbide with low energy at low cost is thereby provided.
摘要翻译： 本发明提供一种生产碳化硅的方法，包括：提供具有碳加热器的硅晶体制造装置; 当在非氧化性气氛下由包含在由碳加热器加热的容器中的硅熔体制造硅晶体时，在碳加热器的表面上形成碳化硅副产物; 并收集碳化硅副产物以产生碳化硅。 从而可以提供以低成本制造低能量的碳化硅的方法。
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公开(公告)号：US20210222321A1
公开(公告)日：2021-07-22
申请号：US17269197
申请日：2019-06-10
发明人： Ryoji HOSHI , Keisuke MIHARA , Kousei SUGAWARA , Suguru MATSUMOTO
摘要： A method for growing a single crystal according to a Czochralski method (CZ method) or a magnetic field applied CZ method (MCZ method), the method including: a first step of obtaining a melt by melting a silicon raw material loaded in a crucible; a second step of forming a solidified layer by solidifying a part of the melt; a third step of removing at least a part of the melt in a state where the solidified layer and the melt coexist; a fourth step of obtaining a melt by melting the solidified layer; and a fifth step of growing a silicon single crystal from the melt. Consequently, a method for purifying a silicon raw material and growing a single crystal on one CZ pulling apparatus and growing a single crystal with a reduced impurity concentration is provided.
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