公开(公告)号：US20180237940A1

公开(公告)日：2018-08-23

申请号：US15758023

申请日：2016-08-23

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Kiyotaka TAKANO

IPC分类号： C30B15/30 ,  C30B15/14 ,  C30B30/04 ,  H01F6/04 ,  H01F6/06

CPC分类号： C30B15/305 ,  C30B15/14 ,  C30B29/06 ,  C30B29/42 ,  C30B30/04 ,  H01F6/04 ,  H01F6/06

摘要： A single-crystal pulling apparatus including a pulling furnace containing a crucible containing molten single crystal material, and a magnetic field generation device that is arranged around the furnace, has superconducting coils, and generates a magnetic field distribution. A magnetic flux density distribution on an X axis, which is a direction of magnetic force lines at the central axis in a horizontal plane, is a convex upward distribution, and a magnetic flux density on the X axis becomes 80% or less of a magnetic flux density set value at a crucible wall. Simultaneously, a magnetic flux density distribution on a Y axis, orthogonal to the X axis, is a convex downward distribution, and a magnetic flux density on the Y axis becomes 140% or more of the set value at the crucible wall when the magnetic flux density at the central axis in the horizontal plane is the set value.

公开(公告)号：US09951440B2

公开(公告)日：2018-04-24

申请号：US14893280

申请日：2014-05-22

申请人： SunEdison Semiconductor Limited

发明人： Soubir Basak ,  Carissima Marie Hudson ,  Gaurab Samanta ,  Jae-Woo Ryu ,  Hariprasad Sreedharamurthy ,  Kirk D. McCallum ,  HyungMin Lee

IPC分类号： B32B3/02 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B15/04 ,  C30B30/04 ,  H01L29/165 ,  H01L29/167 ,  H01L29/739

CPC分类号： C30B15/20 ,  C30B15/04 ,  C30B15/30 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7393

摘要： An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

公开(公告)号：US09938634B2

公开(公告)日：2018-04-10

申请号：US14787368

申请日：2014-05-08

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Masahiro Sakurada ,  Junya Tokue ,  Ryoji Hoshi ,  Izumi Fusegawa

IPC分类号： C30B15/04 ,  C30B29/06 ,  C30B15/30 ,  C30B30/04

CPC分类号： C30B15/04 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

摘要： A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.

公开(公告)号：US20160068992A1

公开(公告)日：2016-03-10

申请号：US14787368

申请日：2014-05-08

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Masahiro SAKURADA ,  Junya TOKUE ,  Ryoji HOSHI ,  Izumi FUSEGAWA

IPC分类号： C30B15/04 ,  C30B30/04 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04

摘要： A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.

摘要翻译： 一种磷掺杂硅单晶的制造方法，其特征在于，包括通过磁场施加切克劳斯基（MCZ）法从掺杂有磷的硅熔融物中提取磷掺杂的硅单晶，其中磷被掺杂，使得磷 磷掺杂硅单晶为2×1016原子/ cm3以上，并且以2000高斯或更高的中心磁场强度将水平磁场施加到硅熔体，使得将产生的磷掺杂硅单晶 氧浓度为1.6×1018原子/ cm3（ASTM'79）以上。 一种重掺杂磷，氧浓度为1.6×1018原子/ cm3（ASTM'79）以上的硅单晶的制造方法。

公开(公告)号：US09127377B2

公开(公告)日：2015-09-08

申请号：US13590413

申请日：2012-08-21

申请人： Wolfgang Walter ,  Cristian Boffo ,  Philipp Revilak

发明人： Wolfgang Walter ,  Cristian Boffo ,  Philipp Revilak

IPC分类号： C30B15/22 ,  C30B30/04 ,  H01F38/00 ,  C30B15/30 ,  H01F6/04 ,  H01F6/06 ,  C30B29/06 ,  C30B29/08 ,  C30B29/42

CPC分类号： C30B30/04 ,  C30B15/305 ,  C30B29/06 ,  C30B29/08 ,  C30B29/42 ,  H01F6/04 ,  H01F6/06 ,  H01F38/00 ,  Y10T117/1068

摘要： A single-crystal pulling device includes vertically tilted magnetic coils between the walls of a cooling vessel. The inside and outside walls of the cooling vessel are coaxially aligned about a central axis. The inside wall of the cooling vessel is coaxially disposed around a cylindrical crucible that holds molten semiconductor material. A mid line passes through the middle point of a first coil, the central axis and the middle point of a second coil. The first coil is wound in a first plane, and the second coil is wound in a second plane. The first plane and the second plane both intersect the central axis at the same point. The first plane intersects the central axis at an angle between 5 and 15 degrees. In one embodiment, the first plane intersects the central axis below the crucible. In another embodiment, the first plane intersects the central axis above the crucible.

摘要翻译： 单晶拉制装置包括在冷却容器的壁之间的垂直倾斜的磁性线圈。 冷却容器的内壁和外壁围绕中心轴线共轴对准。 冷却容器的内壁同时设置在保持熔融半导体材料的圆柱形坩埚周围。 中线穿过第一线圈的中点，第二线圈的中心轴线和中点。 第一线圈被卷绕在第一平面中，并且第二线圈缠绕在第二平面中。 第一平面和第二平面在相同点处都与中心轴相交。 第一平面与中心轴线以5度和15度之间的角度相交。 在一个实施例中，第一平面与坩埚下方的中心轴相交。 在另一个实施例中，第一平面与坩埚上方的中心轴相交。

公开(公告)号：US09080254B2

公开(公告)日：2015-07-14

申请号：US13202096

申请日：2010-03-11

申请人： Hidemitsu Sakamoto ,  Hironori Daikoku ,  Yasuyuki Fujiwara

发明人： Hidemitsu Sakamoto ,  Hironori Daikoku ,  Yasuyuki Fujiwara

IPC分类号： C30B15/30 ,  C30B29/36 ,  C30B9/06 ,  C30B17/00 ,  C30B19/04 ,  C30B15/32 ,  C30B15/10 ,  C30B9/10

CPC分类号： C30B29/36 ,  C30B9/06 ,  C30B9/10 ,  C30B15/10 ,  C30B15/30 ,  C30B15/305 ,  C30B15/32 ,  C30B17/00 ,  C30B19/04

摘要： In a method of producing a SiC single crystal, the SiC single crystal is grown on a SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle.

摘要翻译： 在制造SiC单晶的方法中，通过将固定在可旋转晶种固定轴上的SiC晶种与通过将碳溶解在熔融物中而制成的溶液接触而将SiC单晶生长在SiC晶种上 在可旋转坩埚中含硅。 该方法包括开始晶种固定轴的旋转，并在预定的延迟时间（Td）之后开始坩埚的旋转。 然后同时停止晶种固定轴的旋转和坩埚的旋转; 然后停止晶种固定轴和坩埚预定的停止时间（Ts）; 并重复旋转/停止循环。

公开(公告)号：US08628613B2

公开(公告)日：2014-01-14

申请号：US13089352

申请日：2011-04-19

申请人： Martin Weber ,  Werner Schachinger ,  Piotr Filar

发明人： Martin Weber ,  Werner Schachinger ,  Piotr Filar

IPC分类号： C30B15/14

CPC分类号： C30B29/06 ,  C30B15/18 ,  C30B15/305

摘要： Silicon semiconductor wafers are produced by pulling a single crystal at a seed crystal from a melt heated in a crucible; supplying heat to the center of the crucible bottom with a heating power which, in the course of the growth of a cylindrical section of the single crystal, is increased at least once to not less than 2 kW and is then decreased again; and slicing semiconductor wafers from the pulled single crystal.

摘要翻译： 通过从在坩埚中加热的熔体中的晶种拉出单晶来制造硅半导体晶片; 以坩埚底部的中心供热，其加热功率在单晶体的圆柱形部分的生长过程中至少增加一次至不小于2kW，然后再次降低; 并从拉出的单晶切片半导体晶片。

公开(公告)号：US08398766B2

公开(公告)日：2013-03-19

申请号：US12548862

申请日：2009-08-27

申请人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

发明人： Timo Mueller ,  Gudrun Kissinger ,  Walter Heuwieser ,  Martin Weber

IPC分类号： C30B15/02

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203 ,  C30B15/305 ,  C30B30/04 ,  C30B33/02

摘要： Semiconductor wafers composed of monocrystalline silicon and doped with nitrogen contain an OSF region and a Pv region, wherein the OSF region extends from the center radially toward the edge of the wafer as far as the Pv region; the wafer has an OSF density of less than 10 cm−2, a BMD density in the bulk of at least 3.5×108 cm−3, and a radial distribution of the BMD density with a fluctuation range BMDmax/BMDmin of not more than 3. The wafers are produced by controlling initial nitrogen content and maintaining oxygen within a narrow window, followed by a heat treatment.

摘要翻译： 由单晶硅构成并掺杂有氮的半导体晶片包含OSF区域和Pv区域，其中OSF区域从中心径向延伸至晶片边缘至Pv区域; 晶片具有小于10cm -2的OSF密度，至少3.5×10 8 cm -3的本体的BMD密度以及具有不大于3的波动范围BMDmax / BMDmin的BMD密度的径向分布 通过控制初始氮含量并将氧保持在窄窗口内，然后进行热处理来生产晶片。

公开(公告)号：US20120132131A1

公开(公告)日：2012-05-31

申请号：US13328132

申请日：2011-12-16

申请人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

发明人： Do-Won Song ,  Young-Hun Kim ,  Eun-Sang Ji ,  Young-Kyu Choi ,  Hwa-Jin Jo

IPC分类号： C30B15/22

CPC分类号： C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068

摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

公开(公告)号：US20100126409A1

公开(公告)日：2010-05-27

申请号：US11988295

申请日：2006-04-27

申请人： Masahiro Sakurada ,  Izumi Fusegawa

发明人： Masahiro Sakurada ,  Izumi Fusegawa

IPC分类号： C30B15/20

CPC分类号： C30B15/305 ,  C30B30/04

摘要： This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils (25) are connected, is more than 5.5 (gauss/mm) and not more than 10 (gauss/mm) wherein ΔBr represents the amount of a variation in magnetic field strength from an original point (O) as the center part on a solid-liquid interface of a single crystal (12) to the inner wall (A) of a crucible on the surface of a melt, gauss; and ΔRc represents a radial distance from the original point (O) to the inner wall (A) of the crucible on the surface of the melt, mm. According to the production process of a single crystal, in growing a single crystal, the variation in temperature gradient near the solid-liquid interface can be minimized, and a high-quality single crystal having a desired defect zone in the direction of crystal growth can easily be produced with high productivity at high yield.

摘要翻译： 本发明提供了一种通过Chokralsky方法制造单晶的方法，其中施加了水平磁场，其特征在于，将单晶拉起，使得这样的放射状磁场强度梯度Dgr; Br /＆Dgr; Rc 连接磁场产生线圈（25）的中心的方向大于5.5（高斯/ mm）且不大于10（高斯/ mm），其中＆Dgr; Br表示来自原始磁场强度的磁场强度的变化量 （O）作为单晶（12）与熔体表面上的坩埚的内壁（A）的固 - 液界面的中心部分，高斯; 和R d表示从熔点表面上的坩埚的原始点（O）到内壁（A）的径向距离。 根据单晶的制造工序，在生长单晶时，固液界面附近的温度梯度的变化可以最小化，并且在晶体生长方向上具有期望缺陷区的高质量单晶可以 容易以高产率高产率生产。