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    Method of purifying molten silica
    3.
    发明授权
    Method of purifying molten silica 失效
    熔融二氧化硅的净化方法

    公开(公告)号：US4759787A

    公开(公告)日：1988-07-26

    申请号：US897636

    申请日：1986-07-07

    申请人： John A. Winterburn

    发明人： John A. Winterburn

    IPC分类号： C03B20/00 ,  C03B5/08 ,  C03B19/04 ,  C03B23/04 ,  C03B32/00 ,  C03C23/00 ,  C30B15/10 ,  C30B15/18 ,  C03B15/00 ,  C03B19/00

    CPC分类号： C03B32/00 ,  C03B19/095 ,  C03B5/08 ,  C03C23/009 ,  C30B15/10 ,  C30B15/18

    摘要： An improved quality vitreous silica boby and/or improved quality product made at high temperature in a vitreous silica vessel is/are obtained by applying a polarizing potential across the boundary surfaces of the vitreous silica body or vessel to cause migration of impurity ions away from one of the boundary surfaces thereof. Single crystal silicon (10) of reduced alkali content is drawn from melt (12) in a vitreous silica crucible (14) with a polarizing voltage applied across the wall of the crucible.

    摘要翻译： PCT No.PCT / GB85 / 00499 Sec。 371日期：1986年7月7日 102（e）日期1986年7月7日PCT提交1985年11月4日PCT公布。 公开号WO86 / 02919 日期：1986年5月22日。通过在玻璃状二氧化硅体或容器的边界面上施加极化电位引起迁移，获得在玻璃状二氧化硅容器中在高温下制备的改进的优质玻璃状石英玻璃和/或改进的优质产品 的杂质离子远离其一个边界表面。 具有降低的碱含量的单晶硅（10）在石英玻璃坩埚（14）中从熔融物（12）中拉出，其中极化电压施加在坩埚的壁上。

    Cold crucible system and method for the meeting and crystallization of non-metallic inorganic compounds
    4.
    发明授权
    Cold crucible system and method for the meeting and crystallization of non-metallic inorganic compounds 失效
    冷坩埚系统和非金属无机化合物的结晶方法

    公开(公告)号：US4609425A

    公开(公告)日：1986-09-02

    申请号：US606020

    申请日：1984-05-02

    申请人： Dieter W. Mateika ,  Rolf Laurien

    发明人： Dieter W. Mateika ,  Rolf Laurien

    IPC分类号： C30B15/12 ,  C30B15/00 ,  C30B15/10 ,  C30B15/18 ,  C30B15/30 ,  C30B29/28 ,  F27B14/06 ,  F27B14/10 ,  C30B15/24

    CPC分类号： C30B15/305 ,  C30B15/00 ,  C30B15/10 ,  C30B15/18 ,  C30B29/28 ,  Y10T117/1052

    摘要： A cold crucible system and method for melting and crystallizing non-metallic inorganic compounds having a crucible, the side and the bottom of which are formed of metal pipes through which a cooling medium flows and independently excitable induction coils surrounding the side wall and the bottom of the crucible for coupling high energy into non-metallic inorganic compound present in said crucible and thus to melt said compound in said crucible, a member formed of an electrically conductive material and inert to any of said melt present in said crucible positioned at a distance above the bottom of the crucible and a container, opened at the top, lowered so as to project from the melt formed in the crucible, provided with apertures for the flow of the melt, and so positioned so as to contain up to 25% of the contents of the crucible.

    摘要翻译： 一种冷坩埚系统和熔融结晶非金属无机化合物的方法，所述无机化合物具有坩埚，所述坩埚的侧面和底部由金属管形成，所述金属管通过所述金属管形成，所述金属管通过所述金属管形成，所述金属管通过所述金属管形成，所述金属管围绕所述侧壁和底部 用于将高能量耦合到存在于所述坩埚中的非金属无机化合物并因此熔化所述坩埚中的所述化合物的坩埚，由导电材料形成的构件，并且位于所述坩埚中存在的任何所述熔体中，所述熔体位于所述坩埚 坩埚的底部和在顶部开口的容器下降，以便从形成在坩埚中的熔体突出设置有用于熔体流动的孔，并且定位成容纳高达25％的 坩埚的内容物

    Method for the controlled melting of semiconductor bodies
    5.
    发明授权
    Method for the controlled melting of semiconductor bodies 失效
    半导体器件受控熔化的方法

    公开(公告)号：US4324610A

    公开(公告)日：1982-04-13

    申请号：US888072

    申请日：1978-03-20

    申请人： Donald R. Clement ,  Roger G. Nikirk

    发明人： Donald R. Clement ,  Roger G. Nikirk

    IPC分类号： H01L21/208 ,  C30B15/18

    CPC分类号： C30B15/18 ,  Y10S117/906

    摘要： A method for the controlled melting of an end of a polycrystalline semiconductor body. The polycrystalline body is divided into two or more segments and the segments are positioned in a spaced apart relationship so as to be electrically isolated from each other by narrow gaps. One end of the segments is heated by an external heating means such as by induction heating to cause a portion of the end of the segments to melt. Some of the molten material so formed then flows into the gap separating the segments and electrically shorts together the segments. The opposite ends of the segments are connected to an electrical power supply and a heating current is passed through the segments and through the molten material bridging the gaps. Separately adjusting the heating effects of the external heating means and the heating current makes possible the controlled heating and controlled melting of the end portions of the segments.

    摘要翻译： 一种多晶半导体本体端部受控熔化的方法。 多晶体被分成两个或多个段，并且这些段以间隔开的关系定位，以便通过窄间隙彼此电隔离。 通过诸如感应加热的外部加热装置来加热段的一端，以使段的一部分端部熔化。 这样形成的一些熔融材料然后流入间隔开的间隙，并将段电连接在一起。 段的相对端连接到电源，并且加热电流通过段并穿过桥接间隙的熔融材料。 单独调节外部加热装置的加热效果和加热电流使得可以控制加热和可控制的段的端部熔化。

    INGOT GROWTH APPARATUS
    6.
    发明公开
    INGOT GROWTH APPARATUS 审中-公开

    公开(公告)号：US20240076798A1

    公开(公告)日：2024-03-07

    申请号：US18028609

    申请日：2021-09-03

    申请人： HANWHA SOLUTIONS CORPORATION ,  HANWHA CORPORATION

    发明人： Young Min LEE ,  Kyung Seok LEE ,  Jin Sung PARK ,  Dong Woo BAE

    IPC分类号： C30B15/18 ,  C30B29/06

    CPC分类号： C30B15/18 ,  C30B29/06

    摘要： An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES
    7.
    发明公开
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20240071775A1

    公开(公告)日：2024-02-29

    申请号：US17822008

    申请日：2022-08-24

    申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    发明人： David LYSACEK ,  Jan HYBL ,  Dusan POSTULKA ,  Juraj JARINA ,  Vit JANIREK ,  Alexandra SENKOVA

    IPC分类号： H01L21/322 ,  C30B15/18 ,  H01L21/304 ,  H01L21/306

    CPC分类号： H01L21/3225 ,  C30B15/18 ,  H01L21/304 ,  H01L21/30604

    摘要： In an example, a method of manufacturing a semiconductor device includes providing a semiconductor substrate comprising an unpolished CZ silicon substrate, a substrate upper side, and a substrate lower side opposite to the substrate upper side. The method includes first annealing the semiconductor substrate at a first temperature in an inert environment for a first time. The method includes second annealing the semiconductor substrate at a second temperature in a wet oxidation environment for a second time. The first annealing dissolves inner wall oxide in bulk region voids and the second annealing fills the voids with semiconductor interstitials. In some examples, the CZ silicon substrate is provided from a CZ ingot grown in the presence of a magnetic field and using continuous counter-doping. The method provides, among other things, a CZ silicon substrate with reduced crystal originated particle (COP) defects, reduced oxygen concentration, and reduced radial resistivity variation.

    Method For Producing Semiconductor Wafers Composed Of Silicon
    8.
    发明申请
    Method For Producing Semiconductor Wafers Composed Of Silicon 有权
    用于生产由硅组成的半导体晶片的方法

    公开(公告)号：US20110304081A1

    公开(公告)日：2011-12-15

    申请号：US13089352

    申请日：2011-04-19

    申请人： Martin Weber ,  Werner Schachinger ,  Piotr Filar

    发明人： Martin Weber ,  Werner Schachinger ,  Piotr Filar

    IPC分类号： B28B11/14

    CPC分类号： C30B29/06 ,  C30B15/18 ,  C30B15/305

    摘要： Silicon semiconductor wafers are produced by pulling a single crystal at a seed crystal from a melt heated in a crucible; supplying heat to the center of the crucible bottom with a heating power which, in the course of the growth of a cylindrical section of the single crystal, is increased at least once to not less than 2 kW and is then decreased again; and slicing semiconductor wafers from the pulled single crystal.

    摘要翻译： 通过从在坩埚中加热的熔体中的晶种拉出单晶来制造硅半导体晶片; 以坩埚底部的中心供热，其加热功率在单晶体的圆柱形部分的生长过程中至少增加一次至不小于2kW，然后再次降低; 并从拉出的单晶切片半导体晶片。

    Apparatus and method for growing a crystal and heating an annular channel circumscribing the crystal
    10.
    发明授权
    Apparatus and method for growing a crystal and heating an annular channel circumscribing the crystal 有权
    用于生长晶体并加热围绕晶体的环形通道的装置和方法

    公开(公告)号：US07862656B2

    公开(公告)日：2011-01-04

    申请号：US11773005

    申请日：2007-07-03

    申请人： Olexy V. Radkevich ,  Mehmed Becirovic ,  Keith Ritter

    发明人： Olexy V. Radkevich ,  Mehmed Becirovic ,  Keith Ritter

    IPC分类号： C30B15/12

    CPC分类号： C30B15/12 ,  C30B15/18 ,  Y10T117/1016

    摘要： An apparatus and method is provided for pulling a crystal seed from melt for growing a single crystal. The method includes the steps of providing a crucible and providing within the crucible an outer container, and providing coaxially within the outer container an inner container. A protruding portion of the inner container protrudes downward relative to the outer container for containing melt, the inner and outer containers defining an annular channel therebetween which has a bottom wall and contains introduced charge feed. The method further includes the steps of providing for allowing fluid communication between the annular channel and the inner container, delivering charge feed into the annular channel, and generating heat from within the annular channel for preventing the formation of a condensate of the charge feed within the annular channel.

    摘要翻译： 提供了一种用于从熔体中拉晶晶的装置和方法，用于生长单晶。 该方法包括以下步骤：提供坩埚并在坩埚内提供外部容器，并且在外部容器内同轴地提供内部容器。 内部容器的突出部分相对于用于容纳熔体的外部容器向下突出，内部和外部容器在其间限定具有底壁的环形通道，并且包含引入的电荷馈送。 该方法还包括以下步骤：提供允许环形通道和内部容器之间的流体连通，将电荷进料输送到环形通道中，以及从环形通道内产生热量，以防止电荷进料内部的冷凝物形成 环形通道。