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    INGOT GROWTH APPARATUS
    1.
    发明公开
    INGOT GROWTH APPARATUS 审中-公开

    公开(公告)号：US20240076798A1

    公开(公告)日：2024-03-07

    申请号：US18028609

    申请日：2021-09-03

    Applicant: HANWHA SOLUTIONS CORPORATION ,  HANWHA CORPORATION

    Inventor： Young Min LEE ,  Kyung Seok LEE ,  Jin Sung PARK ,  Dong Woo BAE

    IPC: C30B15/18 ,  C30B29/06

    CPC classification number: C30B15/18 ,  C30B29/06

    Abstract: An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES
    2.
    发明公开
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20240071775A1

    公开(公告)日：2024-02-29

    申请号：US17822008

    申请日：2022-08-24

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： David LYSACEK ,  Jan HYBL ,  Dusan POSTULKA ,  Juraj JARINA ,  Vit JANIREK ,  Alexandra SENKOVA

    IPC: H01L21/322 ,  C30B15/18 ,  H01L21/304 ,  H01L21/306

    CPC classification number: H01L21/3225 ,  C30B15/18 ,  H01L21/304 ,  H01L21/30604

    Abstract: In an example, a method of manufacturing a semiconductor device includes providing a semiconductor substrate comprising an unpolished CZ silicon substrate, a substrate upper side, and a substrate lower side opposite to the substrate upper side. The method includes first annealing the semiconductor substrate at a first temperature in an inert environment for a first time. The method includes second annealing the semiconductor substrate at a second temperature in a wet oxidation environment for a second time. The first annealing dissolves inner wall oxide in bulk region voids and the second annealing fills the voids with semiconductor interstitials. In some examples, the CZ silicon substrate is provided from a CZ ingot grown in the presence of a magnetic field and using continuous counter-doping. The method provides, among other things, a CZ silicon substrate with reduced crystal originated particle (COP) defects, reduced oxygen concentration, and reduced radial resistivity variation.

    PRODUCING A MONO-CRYSTALLINE SHEET
    4.
    发明申请
    PRODUCING A MONO-CRYSTALLINE SHEET 有权
    生产单晶片

    公开(公告)号：US20130058827A1

    公开(公告)日：2013-03-07

    申请号：US13698545

    申请日：2011-05-23

    Applicant: Mikael T. Bjoerk ,  Heike E. Riel ,  Heinz Schmid

    Inventor： Mikael T. Bjoerk ,  Heike E. Riel ,  Heinz Schmid

    IPC: C30B15/04 ,  C30B15/18 ,  C30B15/00 ,  H01L21/208 ,  H01L31/02

    CPC classification number: C30B15/08 ,  C30B11/003 ,  C30B11/02 ,  C30B11/10 ,  C30B11/12 ,  C30B13/18 ,  C30B15/002 ,  C30B21/06 ,  C30B29/06 ,  C30B29/64 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1032

    Abstract: A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.

    Abstract translation: 一种单晶片的制造方法包括提供在其间形成间隙的至少两个孔元件; 在间隙中提供包含硅的熔融合金; 在熔融合金附近提供包含硅的气态前体介质; 在熔融合金附近提供硅成核晶体; 并使所述硅成核晶体和熔融合金接触。 用于制造单晶片的装置包括彼此隔开预定距离的至少两个孔元件，从而形成间隙，并且适于被加热以在孔之间的间隙中通过表面张力保持包括硅的熔融合金 元素 前体气体供应在熔融合金附近供应包含硅的气态前体介质; 以及用于保持和移动熔融合金附近的成核晶体的定位装置。

    Growth of lithium niobate crystals
    8.
    发明授权
    Growth of lithium niobate crystals 失效
    铌酸锂晶体的生长

    公开(公告)号：US3346344A

    公开(公告)日：1967-10-10

    申请号：US51635765

    申请日：1965-12-27

    Applicant: BELL TELEPHONE LABOR INC

    Inventor： LEVINSTEIN HYMAN J ,  KURT NASSAU

    IPC: H01L41/18 ,  C01G33/00 ,  C04B35/495 ,  C30B15/00 ,  C30B15/18 ,  H01G7/02

    CPC classification number: H01G7/026 ,  C01G33/00 ,  C01P2006/60 ,  C04B35/495 ,  C30B15/00 ,  C30B15/18 ,  C30B29/30 ,  H01G7/025 ,  Y10S117/902 ,  Y10T29/42

    Abstract: 1,149,492. Lithium niobate. WESTERN ELECTRIC CO. Inc. 7 July, 1966 [12 July, 1965], No. 30535/66. Heading C1A. [Also in Division B1] A lithium niobate crystal is treated by passing an electrical current through at least a portion of it whilst this portion is maintained at a temperature of at least 1000‹ C. Alternatively, a lithium niobate crystal is grown by pulling from a melt and an electrical current is passed through the crystal and through the interface between the growing crystal and the melt. The current density is at least 0À1 ma/cm 2 . when treating the crystal alone and at least 0À5 ma/cm. 2 when using the melt. The treatment is said to influence the formation of magnetic domains in the crystal and a reversal of current during the treatment produces a second magnetic domain. The current may be reversed several times during the treatment to produce a series of domains.

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