Abstract:
An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed to surround the outer surface of the main crucible and heating the main crucible; a heater formed to surround the outer surface of the susceptor and including a coil which is supplied with power to generate a magnetic field and heats the susceptor by electromagnetic induction from the magnetic field; and a heat insulation member disposed between the coil and the susceptor.
Abstract:
In an example, a method of manufacturing a semiconductor device includes providing a semiconductor substrate comprising an unpolished CZ silicon substrate, a substrate upper side, and a substrate lower side opposite to the substrate upper side. The method includes first annealing the semiconductor substrate at a first temperature in an inert environment for a first time. The method includes second annealing the semiconductor substrate at a second temperature in a wet oxidation environment for a second time. The first annealing dissolves inner wall oxide in bulk region voids and the second annealing fills the voids with semiconductor interstitials. In some examples, the CZ silicon substrate is provided from a CZ ingot grown in the presence of a magnetic field and using continuous counter-doping. The method provides, among other things, a CZ silicon substrate with reduced crystal originated particle (COP) defects, reduced oxygen concentration, and reduced radial resistivity variation.
Abstract:
A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.
Abstract:
For Peltier-induced liquid phase epitaxy on a substrate which is an intermetallic III-V compound of gallium, electrical contact is made to the substrate via a layer of gallium in which aluminum has been dissolved to a concentration of more than 0.5% by weight.
Abstract:
1,149,492. Lithium niobate. WESTERN ELECTRIC CO. Inc. 7 July, 1966 [12 July, 1965], No. 30535/66. Heading C1A. [Also in Division B1] A lithium niobate crystal is treated by passing an electrical current through at least a portion of it whilst this portion is maintained at a temperature of at least 1000‹ C. Alternatively, a lithium niobate crystal is grown by pulling from a melt and an electrical current is passed through the crystal and through the interface between the growing crystal and the melt. The current density is at least 0À1 ma/cm 2 . when treating the crystal alone and at least 0À5 ma/cm. 2 when using the melt. The treatment is said to influence the formation of magnetic domains in the crystal and a reversal of current during the treatment produces a second magnetic domain. The current may be reversed several times during the treatment to produce a series of domains.