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    High performance image sensor
    1.
    发明授权
    High performance image sensor 有权

    公开(公告)号：US12100726B2

    公开(公告)日：2024-09-24

    申请号：US18304521

    申请日：2023-04-21

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Tung-Ting Wu ,  Jhy-Jyi Sze ,  Yimin Huang

    IPC: H01L27/146 ,  H01L31/036

    CPC classification number: H01L27/14636 ,  H01L27/14607 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/036

    Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate. One or more isolation structures are arranged within one or more trenches in the semiconductor substrate. The one or more trenches are disposed along opposing sides of a photo diode region within the semiconductor substrate. The semiconductor substrate includes an undulating exterior having rounded corners arranged laterally between neighboring ones of a plurality of flat surfaces. The rounded corners and the plurality of flat surfaces forming a plurality of triangular shaped protrusions arranged between the one or more isolation structures, as viewed along a cross-sectional view.

    Group-III nitride devices and systems on IBAD-textured substrates
    3.
    再颁专利
    Group-III nitride devices and systems on IBAD-textured substrates 有权

    公开(公告)号：USRE49869E1

    公开(公告)日：2024-03-12

    申请号：US17214607

    申请日：2021-03-26

    Applicant: iBeam Materials, Inc.

    Inventor： Vladimir Matias ,  Christopher Yung

    IPC: H01L33/32 ,  H01L21/02 ,  H01L31/00 ,  H01L31/036 ,  H01L33/00 ,  H01L33/18 ,  H01L33/64 ,  H01L33/12 ,  H01L33/60

    CPC classification number: H01L33/32 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L31/00 ,  H01L31/036 ,  H01L33/007 ,  H01L33/18 ,  H01L33/644 ,  H01L33/12 ,  H01L33/60

    Abstract: A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

    Group-III Nitride Devices and Systems on IBAD-Textured Substrates
    7.
    发明申请
    Group-III Nitride Devices and Systems on IBAD-Textured Substrates 审中-公开

    公开(公告)号：US20190221712A1

    公开(公告)日：2019-07-18

    申请号：US16365521

    申请日：2019-03-26

    Applicant: iBeam Materials, Inc.

    Inventor： Vladimir Matias ,  Christopher Yung

    IPC: H01L33/32 ,  H01L33/64 ,  H01L33/18 ,  H01L21/02 ,  H01L31/00 ,  H01L33/00

    CPC classification number: H01L33/32 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L31/00 ,  H01L31/036 ,  H01L33/007 ,  H01L33/12 ,  H01L33/18 ,  H01L33/60 ,  H01L33/644

    Abstract: A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

    BORON NITRIDE CARBON ALLOY SOLAR CELLS
    8.
    发明申请
    BORON NITRIDE CARBON ALLOY SOLAR CELLS 审中-公开

    公开(公告)号：US20180301579A1

    公开(公告)日：2018-10-18

    申请号：US15970114

    申请日：2018-05-03

    Applicant: University of New Hampshire

    Inventor： David S. Lashmore

    IPC: H01L31/0687 ,  C01B35/14 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/048

    CPC classification number: H01L31/0687 ,  B82Y30/00 ,  C01B35/14 ,  C01P2002/52 ,  C01P2004/13 ,  C01P2006/40 ,  H01L31/032 ,  H01L31/035227 ,  H01L31/036 ,  H01L31/048 ,  Y02E10/544

    Abstract: Solar cells fabricated from p-n junctions of boron nitride nanotubes alloyed with carbon are described. Band gaps of boron nitride carbon alloys are tailored by controlling carbon content in the boron nitride nanotubes. High efficiency solar cells can be fabricated by tailoring the band gap of boron nitride carbon alloy nanotubes, and using these nanotubes for fabricating solar cells u. Because boron nitride carbon alloy nanotubes are transparent to most wavelengths of light, the wavelengths not converted to electrons (i.e., absorbed) at a first p-n junction in a solar cell will pass through the stack to another p-n junction in the stack having a different band gap. At each successive p-n junction, each of which has a different band gap from the other p-n junctions in the stack, more wavelengths of light will be converted into electricity. This dramatically increases the efficiency of solar cells.

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