公开(公告)号：US12113086B2

公开(公告)日：2024-10-08

申请号：US18232323

申请日：2023-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

IPC分类号： H01L27/146 ,  H01L31/0216 ,  H01L31/028

CPC分类号： H01L27/1463 ,  H01L31/02161 ,  H01L31/028

摘要： Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

公开(公告)号：US20240290902A1

公开(公告)日：2024-08-29

申请号：US18584699

申请日：2024-02-22

申请人： EPISTAR CORPORATION

发明人： Chang Da Tsai ,  I-Hung Chen ,  Yu Cheng Su

IPC分类号： H01L31/109 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/0304 ,  H01L31/173

CPC分类号： H01L31/109 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/02165 ,  H01L31/03046 ,  H01L31/173

摘要： A light-detecting device includes a base, a first absorption layer, a second absorption layer and a first semiconductor layer. The first absorption layer is located on the base and has a first band gap. The second absorption layer is located between the first absorption layer and the base and has a second band gap and a first dopant. The first semiconductor layer is located between the first absorption layer and the second absorption layer and has a third band gap. The second band gap is equal to or greater than the first band gap, and a third band gap greater than the first band gap and the second band gap. The first absorption layer does not include the first dopant.

公开(公告)号：US12062727B2

公开(公告)日：2024-08-13

申请号：US17880774

申请日：2022-08-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ming Chyi Liu

IPC分类号： H01L31/02 ,  G01J1/04 ,  G01J1/42 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0236

CPC分类号： H01L31/02363 ,  G01J1/0411 ,  G01J1/42 ,  H01L27/1464 ,  H01L31/02161

摘要： The present disclosure relates to an image sensor. The image sensor includes a substrate and a photodetector in the substrate. The image sensor further includes an absorption enhancement structure. The absorption enhancement structure is defined by a substrate depression along a first side of the substrate. The substrate depression is defined by a first plurality of sidewalls that slope toward a first common point and by a second plurality of sidewalls that slope toward a second common point. The first plurality of sidewalls extend over the second plurality of sidewalls.

公开(公告)号：US20240246320A1

公开(公告)日：2024-07-25

申请号：US18623241

申请日：2024-04-01

申请人： Face International Corporation

发明人： Clark D. Boyd ,  Bradbury R. Face ,  Jeffrey D. Shepard

IPC分类号： B32B17/00 ,  B32B7/02 ,  B32B27/06 ,  G01J1/04 ,  G01J3/12 ,  G02B1/10 ,  G02B5/02 ,  G02B5/20 ,  G02B5/26 ,  G02B27/10 ,  G02F1/00 ,  G02F1/01 ,  G02F1/19 ,  G06F1/16 ,  H01L31/0216 ,  H01L31/0232 ,  H02S40/00

CPC分类号： B32B17/00 ,  B32B7/02 ,  B32B27/06 ,  G01J1/0488 ,  G02B1/10 ,  G02B5/0242 ,  G02B5/0263 ,  G02B5/0268 ,  G02B5/0284 ,  G02B5/0289 ,  G02B5/201 ,  G02B5/206 ,  G02B27/1006 ,  G02F1/0018 ,  G02F1/01 ,  G02F1/0102 ,  G02F1/0121 ,  G02F1/19 ,  G06F1/16 ,  H01L31/02161 ,  H01L31/02168 ,  H01L31/02327 ,  H02S40/00 ,  B32B2255/00 ,  B32B2255/20 ,  B32B2255/26 ,  B32B2255/28 ,  B32B2307/404 ,  B32B2307/41 ,  B32B2307/412 ,  B32B2307/418 ,  B32B2457/12 ,  B32B2559/00 ,  G01J2003/1213 ,  G02B5/26 ,  Y02E10/52

摘要： A system and method are provided for forming electromagnetic energy transmissive layers, which are particularly configured to selectively scatter specific and selectable wavelengths of electromagnetic energy, while allowing remaining wavelengths to pass therethrough. Processes are provided by which to form, or otherwise incorporate, one or more energy scattering layers, including uniquely implementing optical light scattering techniques in such energy scattering layers, and to objects, object portions, wall plates, lenses, filters, screens and the like that are formed of, or that otherwise incorporate, such transmissive energy-scattering layers. Refractive indices of particles fixed in a matrix are tunable in order that the finished layers provide an opaque appearance when viewed from an energy-incident excited by light in the visible spectrum. A color, pattern, texture or image of the scattering layer may be rendered according to an individual user's desires, the layers being substantially-transparent to light passing through layers.

公开(公告)号：US20240186434A1

公开(公告)日：2024-06-06

申请号：US18553065

申请日：2021-04-09

申请人： Nippon Telegraph and Telephone Corporation

发明人： Shoko Tatsumi ,  Yasuhiko Nakanishi ,  Masahiro Nada

IPC分类号： H01L31/0352 ,  H01L31/0216 ,  H01L31/054

CPC分类号： H01L31/035281 ,  H01L31/02161 ,  H01L31/0547

摘要： In a light receiving element, a first semiconductor layer that is formed on the upper surface of a substrate and is formed with a semiconductor of a first conductivity type, a light absorbing layer formed with a semiconductor, a second semiconductor layer formed with a semiconductor of a second conductivity type, a first electrode that is formed in contact with the second semiconductor layer, is formed with a metal, and functions as a reflective film, and a second electrode formed on the first semiconductor layer are formed in a vertical direction on the upper surface of the substrate. In the light receiving element, a slope that is neither perpendicular nor parallel to the substrate plane is formed on the substrate, and incident light that has perpendicularly entered the slope is made to enter the light absorbing layer obliquely with respect to the vertical direction.

公开(公告)号：US20240128386A1

公开(公告)日：2024-04-18

申请号：US18243753

申请日：2023-09-08

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Wei DONG

IPC分类号： H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

CPC分类号： H01L31/02363 ,  H01L31/02161 ,  H01L31/022408

摘要： A photodetector includes a first conduction-type semiconductor layer, a semiconductor light absorption layer provided on the first conduction-type semiconductor layer, and a second conduction-type semiconductor layer provided on the semiconductor light absorption layer. Inside the semiconductor light absorption layer, finely modified portions forming a localized inhomogeneous electric field inside the semiconductor light absorption layer by scattering incident light are provided in a manner of being separated from the second conduction-type semiconductor layer.

公开(公告)号：US11938700B2

公开(公告)日：2024-03-26

申请号：US17063682

申请日：2020-10-05

申请人： FACE INTERNATIONAL CORPORATION

发明人： Clark D Boyd ,  Bradbury R Face ,  Jeffrey D Shepard

IPC分类号： B32B17/00 ,  B32B7/02 ,  B32B27/06 ,  B60J3/04 ,  E06B9/24 ,  G01J1/04 ,  G02B1/10 ,  G02B5/02 ,  G02B5/20 ,  G02B27/10 ,  G02F1/00 ,  G02F1/01 ,  G02F1/13 ,  G02F1/19 ,  G06F1/16 ,  H01L31/0216 ,  H01L31/0232 ,  H02S40/00 ,  G01J3/12 ,  G02B5/26

CPC分类号： B32B17/00 ,  B32B7/02 ,  B32B27/06 ,  G01J1/0488 ,  G02B1/10 ,  G02B5/0242 ,  G02B5/0263 ,  G02B5/0268 ,  G02B5/0284 ,  G02B5/0289 ,  G02B5/201 ,  G02B5/206 ,  G02B27/1006 ,  G02F1/0018 ,  G02F1/01 ,  G02F1/0102 ,  G02F1/0121 ,  G02F1/19 ,  G06F1/16 ,  H01L31/02161 ,  H01L31/02168 ,  H01L31/02327 ,  H02S40/00 ,  B32B2255/00 ,  B32B2255/20 ,  B32B2255/26 ,  B32B2255/28 ,  B32B2307/404 ,  B32B2307/41 ,  B32B2307/412 ,  B32B2307/418 ,  B32B2457/12 ,  B32B2559/00 ,  G01J2003/1213 ,  G02B5/26 ,  Y02E10/52

摘要： A system and method are provided for forming one-way light transmissive layers implementing optical light scattering techniques in those layers, and to objects, object portions, lenses, filters, screens and the like that are formed of, or that otherwise incorporate, such one-way light transmissive layers. Processes are provided by which to form, or otherwise incorporate, one or more one-way light transmissive, or substantially transparent, object portions or layers in solid or hollow objects Individual one-way light transmissive layers are formed of substantially-transparent sub-micrometer spheres, including micro-particles and/or nano-particles, with nano-voids incorporated between them. Refractive indices of the sub-micrometer particles are tunable in order that the finished layers provide an opaque appearance when viewed from a light incident side that is rendered according to an individual user's desires, but that are substantially-transparent to light passing through the finished layers to areas or sensors behind those finished layers.

公开(公告)号：US11923466B2

公开(公告)日：2024-03-05

申请号：US16807622

申请日：2020-03-03

申请人： InnoLight Technology (Suzhou) LTD.

发明人： Chih-Kuo Tseng ,  Guoliang Chen ,  Xiaoyao Li ,  Yuzhou Sun ,  Yue Xiao

IPC分类号： H01L31/0216 ,  G02B5/18 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18

CPC分类号： H01L31/02161 ,  H01L31/035272 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1812 ,  G02B5/1861

摘要： A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.

公开(公告)号：US11908960B2

公开(公告)日：2024-02-20

申请号：US17255817

申请日：2019-07-03

申请人： University of Kansas

发明人： Judy Z. Wu ,  Qingfeng Liu

IPC分类号： H01L31/0216 ,  C23C16/448 ,  G01N21/65 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/18 ,  C23C16/18 ,  C23C16/26 ,  C23C16/52 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： H01L31/02161 ,  C23C16/18 ,  C23C16/26 ,  C23C16/448 ,  C23C16/52 ,  G01N21/658 ,  H01L31/028 ,  H01L31/0232 ,  H01L31/02363 ,  H01L31/18 ,  B82Y30/00 ,  B82Y40/00

摘要： A method of making a plasmonic metal/graphene heterostructure comprises heating an organometallic complex precursor comprising a metal at a first temperature T1 for a first period of time t1 to deposit a layer of the metal on a surface of a heated substrate, the heated substrate in fluid communication with the precursor; and heating, in situ, the precursor at a second temperature T2 for a second period of time t2 to simultaneously form on the layer of the metal, a monolayer of graphene and a plurality of carbon-encapsulated metal nanostructures comprising the metal, thereby providing the plasmonic metal/graphene heterostructure. The heated substrate is characterized by a third temperature T3. The plasmonic metal/graphene heterostructures, devices incorporating the heterostructures, and methods of using the heterostructures are also provided.

公开(公告)号：US20240030366A1

公开(公告)日：2024-01-25

申请号：US18265010

申请日：2021-09-08

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Hayato ISHIDA ,  Masaki HIROSE ,  Noburo HOSOKAWA ,  Soh UENOYAMA ,  Kazuyoshi HIROSE ,  Kazunori TANAKA

IPC分类号： H01L31/0232 ,  H01L31/0216

CPC分类号： H01L31/02327 ,  H01L31/02161

摘要： The light detector includes: a substrate including at least one light receiving area and a light incident surface on which light is incident; and a meta-lens formed on the light incident surface of the substrate to focus the light incident on the light incident surface. When viewed from the thickness direction (Z-axis direction) of the substrate, the meta-lens is formed so as to overlap both an adjacent region adjacent to the light receiving area and a peripheral region that is continuous with the adjacent region and is a region inside the light receiving area along the outer edge of the light receiving area. When viewed from the Z-axis direction, a non-forming region in which the meta-lens is not formed is provided in a region overlapping a central region of the light receiving area in the light incident surface.