公开(公告)号：US12243893B2

公开(公告)日：2025-03-04

申请号：US18362866

申请日：2023-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC: H01L27/146 ,  H01L31/036

Abstract: A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors, a plurality of deep trench isolation (DTI) structures, and a plurality of isolation structures. The transistors are over a front-side surface of the semiconductor substrate. The DTI structures extend a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate. The isolation structures extend a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. From a plan view, each of the plurality of isolation structures has a triangular profile at the backside surface of the semiconductor substrate.

公开(公告)号：US12154933B2

公开(公告)日：2024-11-26

申请号：US17816000

申请日：2022-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng-Chien Hsieh ,  Kuo-Cheng Lee ,  Ying-Hao Chen ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.

公开(公告)号：US11843013B2

公开(公告)日：2023-12-12

申请号：US17717495

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC: H01L27/146 ,  G02B5/30

CPC classification number: H01L27/14625 ,  G02B5/3008 ,  G02B5/3058 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

公开(公告)号：US11791299B2

公开(公告)日：2023-10-17

申请号：US15965116

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yuan Li ,  Kuo-Cheng Lee ,  Yun-Wei Cheng ,  Yen-Liang Lin

IPC: H01L23/00

CPC classification number: H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/2105 ,  H01L2224/24145 ,  H01L2224/8212 ,  H01L2224/82896

Abstract: Exemplary embodiments for redistribution layers of integrated circuits are disclosed. The redistribution layers of integrated circuits of the present disclosure include one or more arrays of conductive contacts that are configured and arranged to allow a bonding wave to displace air between the redistribution layers during bonding. This configuration and arrangement of the one or more arrays minimize discontinuities, such as pockets of air to provide an example, between the redistribution layers during the bonding.

公开(公告)号：US11728364B2

公开(公告)日：2023-08-15

申请号：US16990647

申请日：2020-08-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Huei Lin ,  Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Cheng Yuan Wang

IPC: H01L27/146 ,  G02B5/20

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685 ,  G02B5/20

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

公开(公告)号：US11670562B2

公开(公告)日：2023-06-06

申请号：US17107312

申请日：2020-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

IPC: H01L23/367 ,  H01L23/48 ,  H01L25/065

CPC classification number: H01L23/367 ,  H01L23/481 ,  H01L25/0657

Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.

公开(公告)号：US11367745B2

公开(公告)日：2022-06-21

申请号：US16998498

申请日：2020-08-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Ying-Hao Chen

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/028

Abstract: Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

公开(公告)号：US11177304B2

公开(公告)日：2021-11-16

申请号：US16728568

申请日：2019-12-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H01L27/00 ,  H01J40/14 ,  H01L27/146

Abstract: A method for forming a light-sensing device is provided. The method includes forming a light-sensing region in a semiconductor substrate. The semiconductor substrate has a front surface and a light-receiving surface opposite to the front surface. The method also includes forming a first dielectric layer over the front surface and forming a second dielectric layer over the first dielectric layer. The second dielectric layer has a different refractive index than that of the first dielectric layer, and the first dielectric layer and the second dielectric layer together form a (or a part of a) light-reflective element. The method further includes partially removing the first dielectric layer and the second dielectric layer to form a contact opening. In addition, the method includes forming a conductive contact to partially (or completely) fill the contact opening.

公开(公告)号：US11140309B2

公开(公告)日：2021-10-05

申请号：US16699752

申请日：2019-12-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC: H04N5/232 ,  H04N5/369 ,  H01L27/146 ,  H04N9/04

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

公开(公告)号：US11004886B2

公开(公告)日：2021-05-11

申请号：US15996636

申请日：2018-06-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei Cheng ,  Horng Huei Tseng ,  Chao-Hsiung Wang ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Tzu-Hsuan Hsu ,  Yung-Lung Hsu

IPC: H01L27/146

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.