公开(公告)号：US20190195797A1

公开(公告)日：2019-06-27

申请号：US16216014

申请日：2018-12-11

申请人： Illumina, Inc.

发明人： Xiuyu CAI ,  Joseph Francis PINTO ,  Thomas A. BAKER ,  Tracy Helen FUNG

IPC分类号： G01N21/64 ,  G01N33/58 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0232 ,  H01L27/144

CPC分类号： G01N21/6428 ,  B01L3/502715 ,  B01L3/5085 ,  B01L3/50853 ,  G01J1/44 ,  G01N21/05 ,  G01N21/6454 ,  G01N33/582 ,  G01N2021/6439 ,  G02B6/4214 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14629 ,  H01L31/02019 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/02327

摘要： Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

公开(公告)号：US10078142B2

公开(公告)日：2018-09-18

申请号：US15019863

申请日：2016-02-09

申请人： California Institute of Technology

发明人： Michael E. Hoenk ,  John J. Hennessy ,  Shouleh Nikzad ,  April D. Jewell

IPC分类号： G01T1/20 ,  H01L31/107 ,  H01L31/102 ,  G01T1/24 ,  G01T1/29 ,  H01L27/146 ,  H01L27/148

CPC分类号： G01T1/2018 ,  G01T1/244 ,  G01T1/2985 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/148 ,  H01L31/02165 ,  H01L31/102 ,  H01L31/107

摘要： A filter for electromagnetic radiation including one or more dielectric spacer regions and one or more reflective regions integrated on a semiconductor substrate, the semiconductor substrate including a semiconductor photodetector, such that the filter transmits ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and the filter suppresses transmission of electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.

公开(公告)号：US09954158B2

公开(公告)日：2018-04-24

申请号：US15126125

申请日：2014-05-12

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Lixing You ,  Hao Li ,  Xiaoyan Yang ,  Weijun Zhang ,  Zhen Wang

IPC分类号： G01J1/44 ,  H01L39/16 ,  H01L39/02 ,  H01L31/0232 ,  H01L31/0216 ,  H01L31/09

CPC分类号： H01L39/16 ,  G01J1/0433 ,  G01J1/0488 ,  G01J1/44 ,  G01J2001/442 ,  G01J2005/208 ,  G02B5/28 ,  H01L27/144 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/09 ,  H01L39/02 ,  H01L39/10

摘要： A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation.

公开(公告)号：US20170179178A1

公开(公告)日：2017-06-22

申请号：US15363653

申请日：2016-11-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hongkyu PARK

IPC分类号： H01L27/146 ,  G02B27/10

CPC分类号： H01L27/14625 ,  G02B27/1013 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/02162 ,  H01L31/02165

摘要： A color separation element array, an image sensor including the color separation element array, and an electronic device including the color separation element array are provided. The color separation element array includes a plurality of color separation elements configured to separate an incident light into a color light according to wavelength bands in a transparent layer, the plurality of color separation elements including a first element and a second element having different refractive indices, and the first element and second element being arranged in a horizontal direction.

公开(公告)号：US20170084651A1

公开(公告)日：2017-03-23

申请号：US15368272

申请日：2016-12-02

申请人： Sony Semiconductor Solutions Corporation

发明人： Tetsuji Yamaguchi

IPC分类号： H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/307 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/0232 ,  H01L51/442 ,  H01L51/447

摘要： A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

公开(公告)号：US09450114B2

公开(公告)日：2016-09-20

申请号：US14527221

申请日：2014-10-29

申请人： Sony Corporation

发明人： Tetsuji Yamaguchi

IPC分类号： H01L31/0216 ,  H01L27/146 ,  H01L31/0232

CPC分类号： H01L27/14621 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/307 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/0232 ,  H01L51/442 ,  H01L51/447

摘要： A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

摘要翻译： 一种固态成像装置，其特征在于，具备：与形成有半导体基板的布线层的第一面相反一侧的第二表面侧设置的光电转换膜，相对于规定的半导体基板的光进行光电转换 并在其他波长区域透射光; 以及光电转换层，其设置在所述半导体基板中，对于已经透射了所述光电转换膜的其他波长区域的光进行光电转换，所述光电转换膜的输入光相对于所述光电转换膜从所述第二表面侧入射 转换膜和光电转换层。

公开(公告)号：US20150145095A1

公开(公告)日：2015-05-28

申请号：US14606893

申请日：2015-01-27

申请人： University of Washington through its Center for Commercialization

发明人： Samuel Kim ,  Babak Amirparviz

IPC分类号： H01L31/0224 ,  H01L27/14

CPC分类号： H01L31/022416 ,  H01L27/14 ,  H01L31/02165 ,  H01L31/103 ,  H01L31/1035 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/184 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： Devices having features deposited on two sides of a device substrate and methods for making the same. The devices are useful, for example, as the components in a macroelectronic system. In a preferred embodiment, the devices are photosensors having a plurality of electrodes patterned on a first side of the device and an electromagnetic interference filter patterned on a second side of the device. The method facilitates the fabrication of two-sided devices through the use of an immobilizing layer deposited on top of devices patterned on a first side of a device substrate; flipping the device substrate; processing the second side of the device substrate to produce patterned features on the second side of the device substrate; and releasing the devices having patterned elements on two sides of each device.

摘要翻译： 具有沉积在器件基板两侧的特征的器件及其制造方法。 这些装置例如作为宏电子系统中的组件是有用的。 在优选实施例中，装置是具有在装置的第一侧上图案化的多个电极的光电传感器和在装置的第二侧上图案化的电磁干扰滤光器。 该方法通过使用沉积在器件衬底的第一侧上图案化的器件的顶部上的固定层来促进制造双面器件; 翻转装置基板; 处理器件衬底的第二面以在器件衬底的第二侧上产生图案化特征; 并且在每个装置的两侧释放具有图案元素的装置。

公开(公告)号：US20150054105A1

公开(公告)日：2015-02-26

申请号：US14527221

申请日：2014-10-29

申请人： Sony Corporation

发明人： Tetsuji Yamaguchi

IPC分类号： H01L31/0216 ,  H01L31/0232

CPC分类号： H01L27/14621 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/307 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/0232 ,  H01L51/442 ,  H01L51/447

摘要： A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

摘要翻译： 一种固态成像装置，其特征在于，具备：与形成有半导体基板的布线层的第一面相反一侧的第二表面侧设置的光电转换膜，相对于规定的半导体基板的光进行光电转换 并在其他波长区域透射光; 以及光电转换层，其设置在所述半导体基板中，对于已经透射了所述光电转换膜的其他波长区域的光进行光电转换，所述光电转换膜的输入光相对于所述光电转换膜从所述第二表面侧入射 转换膜和光电转换层。

公开(公告)号：US08907262B2

公开(公告)日：2014-12-09

申请号：US13456418

申请日：2012-04-26

申请人： Tetsuji Yamaguchi

发明人： Tetsuji Yamaguchi

IPC分类号： H01L27/00 ,  H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/307 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/0232 ,  H01L51/442 ,  H01L51/447

摘要： A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer.

摘要翻译： 一种固态成像装置，其特征在于，具备：与形成有半导体基板的布线层的第一面相反一侧的第二表面侧设置的光电转换膜，相对于规定的半导体基板的光进行光电转换 并在其他波长区域透射光; 以及光电转换层，其设置在所述半导体基板中，对于已经透射了所述光电转换膜的其他波长区域的光进行光电转换，所述光电转换膜的输入光相对于所述光电转换膜从所述第二表面侧入射 转换膜和光电转换层。

公开(公告)号：US08890271B2

公开(公告)日：2014-11-18

申请号：US12966535

申请日：2010-12-13

申请人： Turgut Tut ,  Peter Duane ,  Young-June Yu ,  Winnie N. Ye ,  Munib Wober ,  Kenneth B. Crozier

发明人： Turgut Tut ,  Peter Duane ,  Young-June Yu ,  Winnie N. Ye ,  Munib Wober ,  Kenneth B. Crozier

IPC分类号： H01L27/14 ,  H01L31/0216 ,  H01L21/311 ,  H01L31/105

CPC分类号： H01L21/31116 ,  H01L31/02164 ,  H01L31/02165 ,  H01L31/105

摘要： Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.

摘要翻译： 描述了用于蚀刻氮化硅（SixNy）光管，波导和柱，制造光电二极管元件以及氮化硅元件与光电二极管元件的集成的各种实施例。 结果表明，使用垂直氮化硅垂直波导可以提高光电探测器（PD）的量子效率。