2D-Doped Surface Passivation Structure and Method of Manufacture

    公开(公告)号:US20240030269A1

    公开(公告)日:2024-01-25

    申请号:US18356970

    申请日:2023-07-21

    CPC classification number: H01L27/14685 H01L27/1462 H01L27/14687

    Abstract: Disclosed herein is a method of coating a detector. The method includes: providing the detector including a detector surface; performing a planarization process to the detector surface; performing a piranha clean process to the planarized surface; performing a slight etch to the piranha cleaned surface; performing an ammonium fluoride etching step to the slight etched surface to create a decontaminated surface. The decontaminated surface is an atomically flat silicon surface with surface and subsurface damage and contamination significantly reduced. A multilayer 2D-doped layer may be epitaxially grown on the decontaminated surface. The detector may provide high quantum efficiency with uniform and stable performance from room temperature to cryogenic temperatures.

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