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    Imaging in curved arrays: methods to produce free-formed curved detectors
    1.
    发明授权
    Imaging in curved arrays: methods to produce free-formed curved detectors 有权

    公开(公告)号：US12087803B2

    公开(公告)日：2024-09-10

    申请号：US17955679

    申请日：2022-09-29

    Applicant: California Institute of Technology

    Inventor： Todd J. Jones ,  Shouleh Nikzad

    IPC: H01L27/146 ,  H01L27/148 ,  H01L31/0392

    CPC classification number: H01L27/14875 ,  H01L27/14683 ,  H01L31/03926

    Abstract: A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing an increased radius of curvature of the curved surface as compared to without the distribution.

    ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS
    3.
    发明申请
    ATOMICALLY PRECISE SURFACE ENGINEERING FOR PRODUCING IMAGERS 审中-公开
    用于生产图像的原始精密表面工程

    公开(公告)号：US20160005786A1

    公开(公告)日：2016-01-07

    申请号：US14829238

    申请日：2015-08-18

    Applicant: California Institute of Technology

    Inventor： Frank Greer ,  Todd J. Jones ,  Shouleh Nikzad ,  Michael E. Hoenk

    IPC: H01L27/146

    CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/1464

    Abstract: High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches.

    Abstract translation: 提供高质量的表面涂层以及结合分子束外延原子精度和原子层沉积的技术，以制造这种高质量的表面涂层。 根据本发明提出的技术制成的涂层被证明能够形成在近紫外（155nm-300nm）的世界记录检测器量子效率（> 50％）的硅CCD检测器。 使用的表面工程方法证明了通过在涂层制造过程中的所有步骤实现原子级精度而获得的检测器性能的鲁棒性。 作为概念证明，产生的表征，材料和示例性设备与其他方法的比较一起呈现。

    2D-Doped Surface Passivation Structure and Method of Manufacture
    4.
    发明公开
    2D-Doped Surface Passivation Structure and Method of Manufacture 审中-公开

    公开(公告)号：US20240030269A1

    公开(公告)日：2024-01-25

    申请号：US18356970

    申请日：2023-07-21

    Applicant: California Institute of Technology

    Inventor： Michael E. Hoenk ,  April D. Jewell ,  Todd J. Jones ,  Shouleh Nikzad

    IPC: H01L27/146

    CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/14687

    Abstract: Disclosed herein is a method of coating a detector. The method includes: providing the detector including a detector surface; performing a planarization process to the detector surface; performing a piranha clean process to the planarized surface; performing a slight etch to the piranha cleaned surface; performing an ammonium fluoride etching step to the slight etched surface to create a decontaminated surface. The decontaminated surface is an atomically flat silicon surface with surface and subsurface damage and contamination significantly reduced. A multilayer 2D-doped layer may be epitaxially grown on the decontaminated surface. The detector may provide high quantum efficiency with uniform and stable performance from room temperature to cryogenic temperatures.

    IMAGING IN CURVED ARRAYS: METHODS TO PRODUCE FREE-FORMED CURVED DETECTORS
    5.
    发明公开
    IMAGING IN CURVED ARRAYS: METHODS TO PRODUCE FREE-FORMED CURVED DETECTORS 审中-公开

    公开(公告)号：US20230146048A1

    公开(公告)日：2023-05-11

    申请号：US17955679

    申请日：2022-09-29

    Applicant: California Institute of Technology

    Inventor： Todd J. Jones ,  Shouleh Nikzad

    IPC: H01L27/148 ,  H01L27/146 ,  H01L31/0392

    CPC classification number: H01L27/14875 ,  H01L27/14683 ,  H01L31/03926

    Abstract: A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing an increased radius of curvature of the curved surface as compared to without the distribution.

    IMAGING IN CURVED ARRAYS: METHODS TO PRODUCE FREE-FORMED CURVED DETECTORS
    6.
    发明申请
    IMAGING IN CURVED ARRAYS: METHODS TO PRODUCE FREE-FORMED CURVED DETECTORS 有权

    公开(公告)号：US20210091136A1

    公开(公告)日：2021-03-25

    申请号：US17027495

    申请日：2020-09-21

    Applicant: California Institute of Technology

    Inventor： Todd J. Jones ,  Shouleh Nikzad

    IPC: H01L27/148 ,  H01L31/0392 ,  H01L27/146

    Abstract: A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount or substrate attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing thereby allowing a decreased radius of curvature (more severe curving) as compared to without the distribution.

    Atomically precise surface engineering for producing imagers
    8.
    发明授权
    Atomically precise surface engineering for producing imagers 有权

    公开(公告)号：US10541266B2

    公开(公告)日：2020-01-21

    申请号：US14829238

    申请日：2015-08-18

    Applicant: California Institute of Technology

    Inventor： Frank Greer ,  Todd J. Jones ,  Shouleh Nikzad ,  Michael E. Hoenk

    IPC: H01L27/146

    Abstract: High-quality surface coatings, and techniques combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate such high-quality surface coatings are provided. The coatings made in accordance with the techniques set forth by the invention are shown to be capable of forming silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155 nm-300 nm). The surface engineering approaches used demonstrate the robustness of detector performance that is obtained by achieving atomic level precision at all steps in the coating fabrication process. As proof of concept, the characterization, materials, and exemplary devices produced are presented along with a comparison to other approaches.

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