公开(公告)号：US12107175B2

公开(公告)日：2024-10-01

申请号：US17572813

申请日：2022-01-11

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Ming-Hung Hsieh

IPC分类号： H01L23/495 ,  H01L25/16 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/102 ,  H10B99/00

CPC分类号： H01L31/02165 ,  H01L25/167 ,  H01L31/02327 ,  H01L31/102 ,  H10B99/00

摘要： An optical semiconductor device with cascade vias is disclosed. The semiconductor device a logic die having a core circuit area and a logic peripheral circuit area; a memory die positioned on the logic die and having a memory cell area and a memory peripheral area; a first inter-die via positioned in the memory peripheral area; a landing pad positioned on the first inter-die via; and a sensor die positioned on the memory die and including a sensor pixel area and a sensor peripheral area, a first intra-die via positioned in the sensor peripheral area. The first inter-die via and the first intra-die via are electrically coupled through the landing pad in a cascade manner.

公开(公告)号：US11848403B2

公开(公告)日：2023-12-19

申请号：US17386446

申请日：2021-07-27

申请人： BOLB INC.

发明人： Jianping Zhang ,  Ying Gao ,  Ling Zhou

IPC分类号： H01L33/32 ,  H01L33/06 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/102

CPC分类号： H01L33/325 ,  H01L31/03042 ,  H01L31/03048 ,  H01L31/035236 ,  H01L31/102 ,  H01L33/06

摘要： Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.

公开(公告)号：US11830892B2

公开(公告)日：2023-11-28

申请号：US17106350

申请日：2020-11-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chien-Chang Huang ,  Chien Nan Tu ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Ji Heng Jiang

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/102

CPC分类号： H01L27/1461 ,  H01L27/1464 ,  H01L27/14607 ,  H01L27/14638 ,  H01L27/14645 ,  H01L27/14689 ,  H01L31/0284 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/102 ,  H01L27/14621 ,  H01L27/14627

摘要： An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

公开(公告)号：US20230134457A1

公开(公告)日：2023-05-04

申请号：US18050465

申请日：2022-10-28

申请人： Asahi Kasei Microdevices Corporation

发明人： Hiromi FUJITA ,  Osamu MOROHARA ,  Daiki YASUDA

IPC分类号： H01L33/46 ,  H01L31/102 ,  H01L31/0304 ,  H01L33/32 ,  H01L31/0216

摘要： Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength λ comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0≤Al+Ga≤0.5 and 0≤As≤1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength λ is 2.5 μm or more at room temperature.

公开(公告)号：US20230071209A1

公开(公告)日：2023-03-09

申请号：US17823397

申请日：2022-08-30

申请人： Infineon Technologies AG

发明人： Hans TADDIKEN ,  Dirk OFFENBERG ,  Trinath Reddy PINNAPA ,  Steffen ROTHENHAEUSSER

IPC分类号： H01L31/102 ,  G01S7/481 ,  G01S17/32 ,  G01S7/4915 ,  H01L27/144 ,  H01L31/18 ,  H01L31/0352

摘要： A time of flight sensor includes at least one pixel, including: an epitaxially-grown Ge-based photosensitive structure including an upper portion and a trunk portion, a Si-based photocurrent collecting structure, a dielectric material layer arranged at least between the upper portion of the photosensitive structure and the photocurrent collecting structure, wherein the trunk portion of the photosensitive structure is arranged within an aperture in the dielectric material layer, and at least one n-contact configured to collect electrons of a photocurrent and at least one p-contact configured to collect holes of the photocurrent, the at least one n-contact and p-contact arranged in the photocurrent collecting structure.

公开(公告)号：US11450782B2

公开(公告)日：2022-09-20

申请号：US17011373

申请日：2020-09-03

申请人： Marvell Asia Pte, Ltd.

发明人： Yu Li ,  Masaki Kato

IPC分类号： H01L21/00 ,  H01L31/102 ,  H01L31/107 ,  H01L31/0232

摘要： A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping state and located from a first depth down to a second depth below a top surface of the silicon device layer; a second sub-layer of the central region modified to modest p doping state embedded from the top surface down to the first depth to interface with the first sub-layer; a layer of germanium with a bottom side attached to the top surface of the second sub-layer; and a third sub-layer embedded into a top side of the layer of germanium, characterized by heavy p++ doping state.

公开(公告)号：US11295962B2

公开(公告)日：2022-04-05

申请号：US16507777

申请日：2019-07-10

申请人： The Board of Trustees of the Leland Stanford Junior University

发明人： Christopher J. Kenney ,  Julie D. Segal

IPC分类号： H01L21/324 ,  H01L21/265 ,  H01L31/18 ,  H01L31/102 ,  G01T1/24

摘要： Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

公开(公告)号：US11276794B2

公开(公告)日：2022-03-15

申请号：US17046864

申请日：2019-04-11

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Tomoya Taguchi ,  Yuki Yoshida ,  Katsumi Shibayama

IPC分类号： H01L31/0352 ,  H01L31/102 ,  H01L31/12

摘要： A semiconductor substrate includes first and second main surfaces opposing each other. The semiconductor substrate includes second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. The second semiconductor regions are two-dimensionally distributed in a first direction and a second direction orthogonal to each other when viewed in a direction orthogonal to the semiconductor substrate. The first region and the second region are adjacent to each other in a direction crossing the first direction and the second direction. The textured surface of the first region is located toward the first main surface in comparison to the surface of the second region in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

公开(公告)号：US10964742B2

公开(公告)日：2021-03-30

申请号：US16752194

申请日：2020-01-24

申请人： Artilux, Inc.

发明人： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen ,  Che-Fu Liang ,  Yuan-Fu Lyu ,  Chien-Lung Chen ,  Chung-Chih Lin ,  Kuan-Chen Chu

IPC分类号： H01L27/146 ,  H04N1/193 ,  H01L31/0352 ,  H01L31/0376 ,  H01L31/102 ,  H01L31/075 ,  H01L31/109 ,  H01L31/103

摘要： A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.

公开(公告)号：US10830640B2

公开(公告)日：2020-11-10

申请号：US16329909

申请日：2017-08-22

申请人： SONY CORPORATION

发明人： Shinji Imaizumi ,  Koji Kadono

IPC分类号： G01J5/00 ,  G01J1/44 ,  H01L31/08 ,  H01Q1/38 ,  G01N21/17 ,  H01Q5/22 ,  H01L27/144 ,  H01L31/028 ,  H01L31/102 ,  H01Q1/36

摘要： To provide an electromagnetic wave detection element capable of detecting an electromagnetic wave with an arbitrary wavelength and being miniaturized. An electromagnetic wave detection element according to the present technology includes an antenna unit and a detection unit. The antenna unit includes a first conductive layer, a first dielectric layer that is laminated on the first conductive layer and is constituted of a dielectric body, and a first graphene layer that is laminated on the first dielectric layer and is made of graphene. The detection unit includes a second conductive layer that is made of a conductive material and is separated from the first conductive layer, a second dielectric layer that is laminated on the second conductive layer and is constituted of a dielectric body, and a second graphene layer that is laminated on the second dielectric layer, is made of graphene, and is separated from the first graphene layer.