公开(公告)号：US20240340589A1

公开(公告)日：2024-10-10

申请号：US18750466

申请日：2024-06-21

申请人： Samsung Display Co., LTD.

发明人： Seung Lyong BOK ,  Jong In BAEK ,  Young Seok SEO ,  Sun Mi YU ,  Jong Hyun LEE ,  Jin Oh KWAG

IPC分类号： H04R7/04 ,  G06F3/041 ,  G06F3/044 ,  G06F3/045 ,  G06F3/046 ,  G06V10/10 ,  G06V40/13 ,  H01L27/12 ,  H01L31/105 ,  H01L31/12 ,  H04R1/02 ,  H10K50/80 ,  H10K50/844 ,  H10K50/856 ,  H10K59/122 ,  H10K59/65

CPC分类号： H04R7/04 ,  G06F3/0412 ,  G06F3/0443 ,  G06F3/046 ,  G06V10/17 ,  G06V40/1306 ,  G06V40/1318 ,  H01L27/1214 ,  H01L31/1055 ,  H01L31/12 ,  H10K50/844 ,  H10K50/856 ,  H10K50/868 ,  H10K59/122 ,  H10K59/65 ,  G06F3/045 ,  G06F2203/04105 ,  G06F2203/04107 ,  H04R1/025 ,  H04R2499/15

摘要： A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

公开(公告)号：US12100792B2

公开(公告)日：2024-09-24

申请号：US17589121

申请日：2022-01-31

申请人： X Display Company Technology Limited

发明人： Matthew Alexander Meitl ,  Ronald S. Cok

IPC分类号： H01L27/15 ,  H01L25/075 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L33/62 ,  H05B45/20

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H05B45/20

摘要： A white-light-emitting inorganic light-emitting-diode (iLED) structure comprises first iLEDs electrically connected in series, each first iLED emitting a different color of light from any other first iLED when electrical power is provided to the first iLEDs, and a second iLED electrically connected to one of the first iLEDs, the second iLED emitting the same color of light as the one of the first iLEDs when electrical power is provided to the first iLEDs. The second iLED can be electrically connected in series or in parallel with the one of the first iLEDs. Such iLED structures can be used at least in displays, lamps, and indicators.

公开(公告)号：US12087874B2

公开(公告)日：2024-09-10

申请号：US17771661

申请日：2020-10-27

申请人： Kyocera Corporation

发明人： Akihiko Funahashi

IPC分类号： H01L31/12 ,  H01L31/0232

CPC分类号： H01L31/12 ,  H01L31/02327

摘要： A mounting board includes a base portion and a frame portion. The base portion includes a first upper surface including a first mounting region. The frame portion includes a second upper surface including a second mounting region and an inner wall surface intersecting with the second upper surface. The inner wall surface of the frame portion includes a first portion connecting with the second upper surface, and a second portion located opposite to the first portion with the first mounting region interposed therebetween. In the second portion, a first film that absorbs light and having a reflectance lower than a reflectance of the inner wall surface of the frame portion is located.

公开(公告)号：US20240282844A1

公开(公告)日：2024-08-22

申请号：US18442767

申请日：2024-02-15

申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

发明人： Hadeel ALAMOUDI ,  Iman S. ROQAN

IPC分类号： H01L29/66 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/12

CPC分类号： H01L29/66984 ,  H01L31/0321 ,  H01L31/035218 ,  H01L31/109 ,  H01L31/125

摘要： An ultraviolet based spin-electronics device includes a Si-based substrate, an n-type semiconductor layer located on the Si-based substrate, wherein the n-type semiconductor layer includes an Sn-doped β-Ga2O3 material, a p-type semiconductor layer located on the n-type semiconductor layer to form a p-n junction, the p-type semiconductor layer including MnO quantum dots, QDs, and first and second electrodes electrically connected to the n-type semiconductor layer and the p-type semiconductor layer, respectively. Spins of charge carriers in the p-type semiconductor layer are aligned according to a first direction when incident UV light has a first polarization, and according to a second direction, opposite to the first direction, when the incident UV light has a second polarization, different from the first polarization.

公开(公告)号：US12051706B2

公开(公告)日：2024-07-30

申请号：US17778037

申请日：2021-05-28

申请人： BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

发明人： Peng Jia ,  Lei Wang ,  Xiaoliang Ding ,  Yunke Qin ,  Zhen Zhang

IPC分类号： H01L27/146 ,  H01L31/0224 ,  H01L31/105 ,  H01L31/12

CPC分类号： H01L27/14612 ,  H01L31/022466 ,  H01L31/105 ,  H01L31/12

摘要： A sensor device, an electronic apparatus and a method for reducing signal noise are provided. The sensor device includes a first detection region and a second detection region. The first detection region includes at least one detector unit, the detector unit includes a first detection electrode and a second detection electrode opposed to each other and a first insulating layer, the first detection electrode is electrically insulated from the second detection electrode by the first insulating layer, the second detection region includes at least one detector unit, the sensor unit includes a first sensor electrode, a second sensor electrode and a first photosensitive layer, and the first photosensitive layer is electrically connected to the first sensor electrode and the second sensor electrode.

公开(公告)号：US20240222538A1

公开(公告)日：2024-07-04

申请号：US18608216

申请日：2024-03-18

申请人： EPISTAR CORPORATION

发明人： Chu-Jih SU ,  Chia-Hsiang CHOU ,  Wei-Chih PENG ,  Wen-Luh LIAO ,  Chao-Shun HUANG ,  Hsuan-Le LIN ,  Shih-Chang LEE ,  Mei Chun LIU ,  Chen OU

IPC分类号： H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/101 ,  H01L31/12

CPC分类号： H01L31/055 ,  H01L25/167 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/125

摘要： A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, an insulating layer located on the second semiconductor layer, and an electrode structure located on the insulating layer. The second semiconductor layer includes a first region having a first conductivity-type and a second region having a second conductivity-type different from the first conductivity-type. The first region is surrounded by the second region, and includes a geometric center and an interface between the first region and the second region. The insulating layer covers the first region and the second region. The electrode structure includes an outer sidewall located on the second region. In a top view, the interface is located between the geometric center and the outer sidewall.

公开(公告)号：US20240213215A1

公开(公告)日：2024-06-27

申请号：US18596076

申请日：2024-03-05

申请人： Google LLC

发明人： Woon-Seong Kwon ,  Nam Hoon Kim ,  Teckgyu Kang ,  Ryohei Urata

IPC分类号： H01L25/065 ,  G02B6/42 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L23/538 ,  H01L25/04 ,  H01L25/075 ,  H01L25/16 ,  H01L31/12 ,  H10K39/00

CPC分类号： H01L25/0652 ,  G02B6/4257 ,  H01L23/3121 ,  H01L23/3672 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/5385 ,  H01L23/5386 ,  H01L25/162 ,  H01L25/041 ,  H01L25/075 ,  H01L25/167 ,  H01L31/12 ,  H01L2225/06517 ,  H10K39/601

摘要： The technology relates to an integrated circuit (IC) package. The IC package may include a substrate. An IC die may be mounted to the substrate. One or more photonic modules may be attached to the substrate and one or more serializer/deserializer (SerDes) interfaces may connect the IC die to the one or more photonic modules. The IC die may be an application specific integrated circuit (ASIC) die and the one or more photonic modules may include a photonic integrated circuit (PIC) and fiber array. The one or more photonic modules may be mounted to one or more additional substrates which may be attached to the substrate via one or more sockets.

公开(公告)号：US11990560B2

公开(公告)日：2024-05-21

申请号：US17860664

申请日：2022-07-08

申请人： NICHIA CORPORATION

发明人： Toru Hashimoto ,  Masato Aihara

IPC分类号： H01L27/15 ,  H01L25/075 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L33/60 ,  H01L33/62

CPC分类号： H01L33/0095 ,  H01L25/0753 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0058 ,  H01L2933/0066

摘要： A light-emitting device includes: a structure including: a layered body including: a light-emitting element comprising a pair of electrodes, and a light-transmissive member disposed on the light-emitting element; and a light-reflective member covering lateral surfaces of the layered body, in which structure has a first surface at which the pair of electrodes are exposed from the light-reflective member, and a second surface connected to the first surface, the second surface being a surface of the light-reflective member. A pair of first electrically conductive films disposed on the first surface of the structure such that each of the pair of first electrically conductive films is connected to a respective one of the pair of electrodes. A pair of second electrically conductive films disposed on the second surface of the structure, each of the pair of electrically conductive films being continuous with the pair of first electrically conductive films.

公开(公告)号：US11935981B2

公开(公告)日：2024-03-19

申请号：US17364175

申请日：2021-06-30

申请人： EPISTAR CORPORATION

发明人： Chu-Jih Su ,  Chia-Hsiang Chou ,  Wei-Chih Peng ,  Wen-Luh Liao ,  Chao-Shun Huang ,  Hsuan-Le Lin ,  Shih-Chang Lee ,  Mei Chun Liu ,  Chen Ou

IPC分类号： H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/101 ,  H01L31/12

CPC分类号： H01L31/055 ,  H01L25/167 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/125

摘要： A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

公开(公告)号：US20240063322A1

公开(公告)日：2024-02-22

申请号：US18345830

申请日：2023-06-30

申请人： Artilux, Inc.

发明人： Huei-Hsiung Hsu ,  Cheng-Te Yu ,  Yu-Ting Chiu

IPC分类号： H01L31/12 ,  H01L31/0203 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/028

CPC分类号： H01L31/125 ,  H01L31/0203 ,  H01L31/02164 ,  H01L31/1808 ,  H01L31/028

摘要： Systems, apparatuses, and methods for optical sensing are provided. For example, an optical sensing apparatus can include a substrate, a light-receiving device, a light-emitting device, an encapsulating structure, a covering cap, and an adhesive layer. The light-receiving device and the light-emitting device can be disposed on and electrically connected to the substrate. The encapsulating structure can be disposed on the substrate and cover the light-emitting device and the light-receiving device. The encapsulating structure can include a top surface, a first side surface, and a lower surface. The first side surface and the lower surface can collectively form a recess. The covering cap can be disposed on the encapsulating structure and can include a first opening, a top portion, a protruding portion, and an extending portion. The adhesive layer can be arranged between the encapsulating structure and the covering cap to adhere the encapsulating structure and the covering cap.