公开(公告)号：US11830892B2

公开(公告)日：2023-11-28

申请号：US17106350

申请日：2020-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Chang Huang ,  Chien Nan Tu ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Ji Heng Jiang

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/102

CPC classification number: H01L27/1461 ,  H01L27/1464 ,  H01L27/14607 ,  H01L27/14638 ,  H01L27/14645 ,  H01L27/14689 ,  H01L31/0284 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/102 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.

公开(公告)号：US11502160B2

公开(公告)日：2022-11-15

申请号：US16807034

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Liang Chen ,  Yu-Lung Yeh ,  Chihchous Chuang ,  Yen-Hsiu Chen ,  Tsai-Ji Liou ,  Yung-Hsiang Chen ,  Ching-Hung Huang

IPC: H01L21/02 ,  H01L49/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

公开(公告)号：US20220238572A1

公开(公告)日：2022-07-28

申请号：US17658704

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ming-Chi Wu ,  Chun-Chieh Fang ,  Bo-Chang Su ,  Chien Nan Tu ,  Yu-Lung Yeh ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L27/146 ,  H01L21/762 ,  H01L21/3205

Abstract: A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

公开(公告)号：US10734427B2

公开(公告)日：2020-08-04

申请号：US16277375

申请日：2019-02-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

公开(公告)号：US10153319B2

公开(公告)日：2018-12-11

申请号：US15960780

申请日：2018-04-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Yuan Wen ,  Chien Nan Tu ,  Ming-Chi Wu ,  Yu-Lung Yeh

IPC: H01L21/00 ,  H01L27/146

Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor integrated chip. The method may be performed by forming an image sensing element within a substrate, and forming an absorption enhancement structure over a back-side of the substrate. The absorption enhancement structure is selectively etched to concurrently define a plurality of grid structure openings and a ground structure opening within the absorption enhancement structure. A grid structure is formed within the plurality of grid structure openings and a ground structure is formed within the ground structure opening. The grid structure extends from over the absorption enhancement structure to a location within the absorption enhancement structure.

公开(公告)号：US20180151759A1

公开(公告)日：2018-05-31

申请号：US15716714

申请日：2017-09-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Chien Nan Tu ,  Chi-Yuan Wen ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Hsin-Yi Kuo

IPC: H01L31/0232 ,  H01L27/30 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/0232 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/307 ,  H01L31/02002 ,  H01L31/0224

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

公开(公告)号：US09721983B2

公开(公告)日：2017-08-01

申请号：US14713773

申请日：2015-05-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Chang Huang ,  Chien-Nan Tu ,  Li-Ming Sun ,  Yu-Lung Yeh ,  Yi-Ping Pan

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685

Abstract: A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.

公开(公告)号：US09620553B2

公开(公告)日：2017-04-11

申请号：US15183595

申请日：2016-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Chang Huang ,  Hsing-Chih Lin ,  Chien-Nan Tu ,  Yu-Lung Yeh

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

公开(公告)号：US10553733B2

公开(公告)日：2020-02-04

申请号：US15716714

申请日：2017-09-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Han Huang ,  Chien Nan Tu ,  Chi-Yuan Wen ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Hsin-Yi Kuo

IPC: H01L31/0232 ,  H01L27/146 ,  H01L27/30 ,  H01L31/02 ,  H01L31/0224

Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

公开(公告)号：US10157944B2

公开(公告)日：2018-12-18

申请号：US15586200

申请日：2017-05-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Chang Huang ,  Wei-Tung Huang ,  Yen-Hsiang Hsu ,  Yu-Lung Yeh ,  Chun-Chieh Fang

IPC: H01L27/00 ,  H01L27/146

Abstract: A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.