公开(公告)号：US11342372B2

公开(公告)日：2022-05-24

申请号：US16924538

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.

公开(公告)号：US09666619B2

公开(公告)日：2017-05-30

申请号：US14688941

申请日：2015-04-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Chang Huang ,  Wei-Tung Huang ,  Yen-Hsiang Hsu ,  Yu-Lung Yeh ,  Chun-Chieh Fang

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469

Abstract: A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

公开(公告)号：US10211244B2

公开(公告)日：2019-02-19

申请号：US15638971

申请日：2017-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

公开(公告)号：US10157944B2

公开(公告)日：2018-12-18

申请号：US15586200

申请日：2017-05-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Chang Huang ,  Wei-Tung Huang ,  Yen-Hsiang Hsu ,  Yu-Lung Yeh ,  Chun-Chieh Fang

IPC: H01L27/00 ,  H01L27/146

Abstract: A semiconductor device includes a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes recesses in the second surface, and surfaces of each of the recesses are wet etched surfaces. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

公开(公告)号：US20220238572A1

公开(公告)日：2022-07-28

申请号：US17658704

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ming-Chi Wu ,  Chun-Chieh Fang ,  Bo-Chang Su ,  Chien Nan Tu ,  Yu-Lung Yeh ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L27/146 ,  H01L21/762 ,  H01L21/3205

Abstract: A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

公开(公告)号：US10734427B2

公开(公告)日：2020-08-04

申请号：US16277375

申请日：2019-02-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.