公开(公告)号：US20210273038A1

公开(公告)日：2021-09-02

申请号：US16807034

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Liang Chen ,  Yu-Lung Yeh ,  Chihchous Chuang ,  Yen-Hsiu Chen ,  Tsai-Ji Liou ,  Yung-Hsiang Chen ,  Ching-Hung Huang

IPC: H01L49/02 ,  H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

公开(公告)号：US11502160B2

公开(公告)日：2022-11-15

申请号：US16807034

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Liang Chen ,  Yu-Lung Yeh ,  Chihchous Chuang ,  Yen-Hsiu Chen ,  Tsai-Ji Liou ,  Yung-Hsiang Chen ,  Ching-Hung Huang

IPC: H01L21/02 ,  H01L49/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.