FABRICATION OF HIGH ASPECT RATIO FEATURES IN A GLASS LAYER BY ETCHING
    3.
    发明申请
    FABRICATION OF HIGH ASPECT RATIO FEATURES IN A GLASS LAYER BY ETCHING 审中-公开
    通过蚀刻在玻璃层中制备高比例特征

    公开(公告)号:US20100304061A1

    公开(公告)日:2010-12-02

    申请号:US12472271

    申请日:2009-05-26

    摘要: Methods, apparatuses, systems, and devices relating to the fabrication of features for semiconductor devices are disclosed. The features may include vias and pillars. In some implementations, the vias may define light pipes for semiconductor image sensor devices that serve to guide electromagnetic radiation directly down to photodiodes or other radiation detecting elements formed on an underlying silicon substrate. These structures significantly improve the light collection efficiency and reduce the scattering and crosstalk losses in the dielectric layer. An etch mask may be used to produce features through a subsequent etching process. More specifically, the etch mask defines sidewalls in the glass layer, provides excellent dry etch resistance, and enables easy lift-off of the etch mask from the glass layer. Two embodiments are disclosed herein: the first using amorphous silicon as the etch mask; and the second employing a photoresist as the etch mask. Both embodiments produce high aspect ratio features having generally vertical and smooth sidewalls.

    摘要翻译: 公开了与半导体器件的特征的制造相关的方法,装置,系统和装置。 特征可以包括通孔和支柱。 在一些实施方案中,通孔可以限定用于半导体图像传感器装置的光管,其用于将电磁辐射直接引导到形成在下面的硅衬底上的光电二极管或其它辐射检测元件。 这些结构显着提高了光的收集效率,并减少了介电层中的散射和串扰损失。 蚀刻掩模可以用于通过随后的蚀刻工艺产生特征。 更具体地,蚀刻掩模限定玻璃层中的侧壁,提供优异的耐干蚀刻性,并且能够容易地从玻璃层剥离蚀刻掩模。 本文公开了两个实施例:第一使用非晶硅作为蚀刻掩模; 第二种采用光致抗蚀剂作为蚀刻掩模。 两个实施例都产生具有大致垂直和平滑侧壁的高纵横比特征。