发明公开
- 专利标题: Light Sensitive Element
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申请号: US18553065申请日: 2021-04-09
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公开(公告)号: US20240186434A1公开(公告)日: 2024-06-06
- 发明人: Shoko Tatsumi , Yasuhiko Nakanishi , Masahiro Nada
- 申请人: Nippon Telegraph and Telephone Corporation
- 申请人地址: JP Tokyo
- 专利权人: Nippon Telegraph and Telephone Corporation
- 当前专利权人: Nippon Telegraph and Telephone Corporation
- 当前专利权人地址: JP Tokyo
- 国际申请: PCT/JP2021/015102 2021.04.09
- 进入国家日期: 2023-09-28
- 主分类号: H01L31/0352
- IPC分类号: H01L31/0352 ; H01L31/0216 ; H01L31/054
摘要:
In a light receiving element, a first semiconductor layer that is formed on the upper surface of a substrate and is formed with a semiconductor of a first conductivity type, a light absorbing layer formed with a semiconductor, a second semiconductor layer formed with a semiconductor of a second conductivity type, a first electrode that is formed in contact with the second semiconductor layer, is formed with a metal, and functions as a reflective film, and a second electrode formed on the first semiconductor layer are formed in a vertical direction on the upper surface of the substrate. In the light receiving element, a slope that is neither perpendicular nor parallel to the substrate plane is formed on the substrate, and incident light that has perpendicularly entered the slope is made to enter the light absorbing layer obliquely with respect to the vertical direction.
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