- 专利标题: Optoelectronic semiconductor device having dielectric layers, and method for manufacturing the same
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申请号: US17421394申请日: 2019-12-19
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公开(公告)号: US12087878B2公开(公告)日: 2024-09-10
- 发明人: Laura Kreiner , Martin Rudolf Behringer
- 申请人: OSRAM Opto Semiconductors GmbH
- 申请人地址: DE Regensburg
- 专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人: OSRAM OPTO SEMICONDUCTORS GMBH
- 当前专利权人地址: DE Regensburg
- 代理机构: VIERING, JENTSCHURA & PARTNER MBB
- 优先权: DE 2019100624.4 2019.01.11
- 国际申请: PCT/EP2019/086456 2019.12.19
- 国际公布: WO2020/144047A 2020.07.16
- 进入国家日期: 2021-07-08
- 主分类号: H01L33/22
- IPC分类号: H01L33/22 ; H01L31/0216 ; H01L31/036 ; H01L31/18 ; H01L33/00 ; H01L33/16 ; H01L33/44 ; F21S41/14 ; G03B21/20
摘要:
An optoelectronic semiconductor device may include a semiconductor body having a first main surface, a first dielectric layer over the first main surface, and a second dielectric layer on a side of the first dielectric layer facing away from the first main surface. The second dielectric layer is patterned to form an ordered photonic structure. The semiconductor body is suitable for emitting or receiving electromagnetic radiation through the first main surface. The first main surface is roughened, and the first dielectric layer is suitable for leveling a roughening of the first main surface.
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