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    APPARATUS AND PROCESS FOR PRODUCING A SINGLE CRYSTAL OF SILICON
    2.
    发明申请
    APPARATUS AND PROCESS FOR PRODUCING A SINGLE CRYSTAL OF SILICON 有权
    生产单晶硅的装置和工艺

    公开(公告)号：US20150292109A1

    公开(公告)日：2015-10-15

    申请号：US14670477

    申请日：2015-03-27

    Applicant: SILTRONIC AG

    Inventor： Georg BRENNINGER ,  Waldemar STEIN ,  Maik HAEBERLEN

    IPC: C30B11/10 ,  C30B11/02 ,  C30B29/06 ,  C30B11/00

    CPC classification number: C30B11/10 ,  C30B11/001 ,  C30B11/003 ,  C30B13/08 ,  C30B13/14 ,  C30B13/20 ,  C30B15/02 ,  C30B15/12 ,  C30B29/06

    Abstract: An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate;a device for metering granular silicon onto the plate; a first induction heating coil above the plate, provided for melting of the granular silicon deposited;a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, the distance between the elevations in a radial direction being not less than 2 mm and not more than 15 mm.

    Abstract translation: 用于制造单晶硅的装置包括具有顶侧，外边缘和内边缘的板，与内边缘相邻的中心开口，以及从中心开口延伸到板的底侧下方的管 ; 用于将颗粒状硅计量到板上的装置; 在板上方的第一感应加热线圈，用于熔化沉积的颗粒状硅; 设置在板下方的第二感应加热线圈，用于稳定硅熔体，该熔体存在于生长的单晶硅上。 板的顶部由陶瓷材料构成，具有高度，径向上的高度之间的距离不小于2mm且不大于15mm。

    Method of preparing group III-V compound semiconductor crystal
    3.
    再颁专利
    Method of preparing group III-V compound semiconductor crystal 有权
    III-V族化合物半导体晶体的制备方法

    公开(公告)号：USRE39778E1

    公开(公告)日：2007-08-21

    申请号：US09824965

    申请日：2001-04-03

    Applicant: Tomohiro Kawase ,  Masami Tatsumi

    Inventor： Tomohiro Kawase ,  Masami Tatsumi

    IPC: C30B11/04

    CPC classification number: C30B11/10 ,  C30B27/00 ,  C30B29/40 ,  C30B29/42

    Abstract: A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible within an airtight vessel formed of a gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.

    Abstract translation: 提供了一种以高再现性制备具有良好电特性并从其中除去杂质的碳掺杂III-V族化合物半导体晶体的方法，其中在晶体生长期间可以容易地调节掺杂碳的量。 该方法包括以下步骤：用复合原料，固体碳和氧化硼填充坩埚; 将填充的坩埚密封在由不透气材料形成的气密容器内; 在密封状态下将复合原料加热并熔化在气密容器中; 并固化熔融的复合原料以生长掺碳化合物半导体晶体。

    Apparatus for producing monocrystals by the Verneuil technique
    5.
    发明授权
    Apparatus for producing monocrystals by the Verneuil technique 失效
    用VERNEUIL技术生产单晶的装置

    公开(公告)号：US4000977A

    公开(公告)日：1977-01-04

    申请号：US563165

    申请日：1975-03-28

    Applicant: Richard Falckenberg

    Inventor： Richard Falckenberg

    IPC: C30B11/10 ,  B01J17/24

    CPC classification number: C30B11/10 ,  Y10S117/90 ,  Y10T117/1028

    Abstract: An apparatus for producing monocrystals having a relatively large cross-section by the Verneuil technique wherein a seed crystal is mounted on a movable crystal support member within a furnace means having a burner guiding flame gases and crystal growth material for impingement against the seed crystal so that the material melts and adheres to the seed crystal and forms a monocrystal which grows axially upwardly therefrom while the seed crystal member is moved axially downwardly a distance corresponding to the amount of axial crystal growth so that substantially uniform growth conditions are maintained throughout the growing process. A relatively massive flame deflector member having a central passage therein is positioned within a furnace means in spaced registry from the burner and radially about the crystal support member so as to deflect the flame gases laterally away from the growing crystal and to receive sufficient heat therefrom to form a heat reservoir for the growing crystal after flame shutdown. At least one axially movable insert member is positioned within the through passage of the deflector member and radially spaced from the crystal support member and the deflector member so as to be selectively movable in relation to the deflector member and the support member.

    Producing monocrystalline bodies by the verneuil method
    7.
    发明授权
    Producing monocrystalline bodies by the verneuil method 失效
    通过verneuil方法生产单晶体

    公开(公告)号：US3892540A

    公开(公告)日：1975-07-01

    申请号：US31327072

    申请日：1972-12-08

    Applicant: UGINE KUHLMANN

    Inventor： CIOCCOLANI ARNALDO

    IPC: C30B11/10 ,  B01J17/00 ,  B01J17/20

    CPC classification number: C30B11/10 ,  Y10S117/918 ,  Y10T117/1028

    Abstract: A flame fusion process for the production of synthetic monocrystalline bodies which comprises horizontally supporting a monocrystalline rod at each end of its axis within a furnace, the rod having at least one radially enlarged portion thereon, passing powdered material of the same composition as the rod through a flame to fuse the same, directing the flame at the outer periphery of the radially enlarged portion of the rod thereby depositing and building up the fused material by crystallization on such outer periphery, rotating the rod about its axis at a rate fast enough so that the part of the outer periphery of the radially enlarged portion of the rod which is in contact with the flame is in the molten state thereby resulting in a radially outwardly enlarging crystal of increasing diameter and varying the distance between the flame and the outer periphery of the radially enlarged portion of the rod as the diameter of the crystal increases to maintain a predetermined relationship between the flame and such outer periphery.

    Abstract translation: 一种用于生产合成单晶体的火焰熔融方法，其包括在炉内在其轴线的每个端部处水平地支撑单晶棒，所述棒在其上具有至少一个径向扩大的部分，通过与棒材相同组成的粉末材料通过 将火焰熔合在该杆的径向扩大部分的外周处，从而通过在该外周上结晶沉积并建立熔融材料，以足够快的速度旋转杆，使得杆以足够快的速度旋转，使得 与火焰接触的杆的径向扩大部分的外周的部分处于熔融状态，从而导致直径增大的径向向外扩大的晶体，并且改变火焰与外周之间的距离 当晶体的直径增加时，棒的径向扩大部分保持预定的关系 消灭火焰和这样的外围。

    Method and apparatus for growing crystals by annealing the crystal after formation
    8.
    发明授权
    Method and apparatus for growing crystals by annealing the crystal after formation 失效
    通过在形成后退火晶体来生长晶体的方法和装置

    公开(公告)号：US3870472A

    公开(公告)日：1975-03-11

    申请号：US88000069

    申请日：1969-11-26

    Applicant: ADAMSKI JOSEPH A ,  WEINER JOSEPH R ,  LAVOIE GIRARD H

    Inventor： ADAMSKI JOSEPH A ,  WEINER JOSEPH R ,  LAVOIE GIRARD H

    IPC: C30B11/10 ,  C30B33/00 ,  B01J17/22

    CPC classification number: C30B11/10 ,  C30B29/20 ,  C30B33/00 ,  Y10S117/906 ,  Y10T117/1028

    Abstract: This invention is directed toward a method and apparatus for producing fracture-free crystalline boules through a simultaneous growing and annealing technique. It involves a conventional flame-fusion crystal-growing process and apparatus modified to effect crystal growth by using a high temperature fusion flame within a controlled heated zone. The temperature of the zone is controlled in the top portion at a temperature sufficient to effect crystal growth and in the bottom portion at a temperature sufficient to effect a complete anneal of the grown crystal. The device of this invention comprises a conventional Verneuil type crystal growing apparatus modified by the addition of a high temperature furnace arranged concentrically around the growing chamber. The growing chamber comprises an elongated tube of high temperature resistant material, such as zirconia, positioned and aligned directly below a powder dispensing assembly and burner assembly. The growing chamber passes through the center of the furnace which includes a high temperature tungsten mesh heating element, heat shields and a water-jacketed cover.

    Abstract translation: 本发明涉及一种用于通过同时生长和退火技术生产无破裂结晶块的方法和装置。 它涉及常规的火焰熔融晶体生长方法和改进以通过在受控加热区内使用高温熔融火焰来实现晶体生长的装置。 在足以实现晶体生长的温度下和在足以实现生长晶体的完全退火的温度下在顶部控制区的温度。 本发明的装置包括通过添加围绕生长室同心布置的高温炉而改进的常规Verneuil型晶体生长装置。 生长室包括长度高的耐高温材料管，例如氧化锆，其定位并直接对准粉末分配组件和燃烧器组件的下方。 生长室通过炉的中心，炉中心包括高温钨网加热元件，隔热罩和水套盖。

    Apparatus for manufacturing semiconductor substances from germanium-silicon or molybdenum-silicon
    9.
    发明授权
    Apparatus for manufacturing semiconductor substances from germanium-silicon or molybdenum-silicon 失效
    用于从锗 - 硅或硅 - 硅制造半导体物质的装置

    公开(公告)号：US3675709A

    公开(公告)日：1972-07-11

    申请号：US3675709D

    申请日：1969-08-14

    Applicant: CONSORTIUM ELEKTROCHEM IND

    Inventor： VOGERL MANFRED ,  DAXER HILMAR ,  RODER MANFRED ,  DIETZ WOLFGANG

    IPC: C23C4/123 ,  C30B11/10 ,  C30B15/08 ,  H01L35/34 ,  B22D25/00 ,  B22D39/00

    CPC classification number: C30B11/10 ,  C23C4/123

    Abstract: A method and apparatus for manufacturing semiconductor bodies from germanium-silicon or molybdenum-silicon in which a homogeneous melt of the substance under treatment is made in a melting vessel which has a capillary opening in the bottom. A vertically movable receiver, such as a crucible, is mounted beneath the capillary opening, and a piston is movable up and down in the melting vessel above said capillary opening to press drops of the molten substance in said vessel out through said opening and into the receiver where said substance is solidified in crystalline form. The method and apparatus insure that the dropping sequence of said drops causes each consecutive drop to enter the receiver before the preceding drop has fully solidified.

    Abstract translation: 一种用于从锗硅或钼 - 硅制造半导体本体的方法和装置，其中处理物质的均匀熔体在底部具有毛细管开口的熔融容器中制备。 诸如坩埚的可垂直移动的接收器安装在毛细管开口下方，并且活塞可在上述毛细管开口上方的熔融容器中上下移动，以将所述容器中的熔融物质的液滴压出所述开口并进入 接收器，其中所述物质以结晶形式固化。 所述方法和装置确保所述液滴的下落顺序在上一滴完全凝固之前使每个连续液滴进入接收器。

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