知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

93 条记录 (耗时 0.022 秒)

    CRYSTAL GROWTH DOPING APPARATUS AND CRYSTAL GROWTH DOPING METHOD
    1.
    发明申请
    CRYSTAL GROWTH DOPING APPARATUS AND CRYSTAL GROWTH DOPING METHOD 有权

    公开(公告)号：US20230042128A1

    公开(公告)日：2023-02-09

    申请号：US17826359

    申请日：2022-05-27

    申请人： GlobalWafers Co., Ltd.

    发明人： YU-CHIH CHU ,  Tang-Chi Lin ,  Han-Sheng Wu ,  Hsien-Ta Tseng

    IPC分类号： C30B35/00 ,  C30B15/04 ,  C30B11/04

    摘要： A crystal growth doping apparatus and a crystal growth doping method are provided. The crystal growth doping apparatus includes a crystal growth furnace and a doping device that includes a feeding tube inserted to the furnace body along an oblique insertion direction, and a storage cover and a gate tube that are disposed in the feeding tube. The feeding tube extends from an outer surface thereof to form a placement opening, and the placement opening is recessed from an edge thereof to form an upper recessed portion and a lower recessed portion along the oblique insertion direction. The storage cover includes a storage tank and a handle. When the storage cover is disposed in the gate tube body, the gate tube body is configured to isolate an inner space of the feeding tube from the placement opening.

    Method for producing PbTiO3-containing single crystal
    2.
    发明授权
    Method for producing PbTiO3-containing single crystal 有权

    公开(公告)号：US11299818B2

    公开(公告)日：2022-04-12

    申请号：US16312109

    申请日：2017-06-28

    申请人： JFE MINERAL COMPANY, LTD.

    发明人： Kazuhiko Echizenya

    IPC分类号： C30B11/04 ,  C30B11/02 ,  C30B29/32 ,  C30B11/00

    摘要： Provided is a method for producing a single crystal, wherein compositional variations and defects in the single crystal can be prevented and a single crystal having uniform characteristics in the growth direction can be produced at high yield. In this method for producing a single crystal, a PbTiO3-containing single crystal is produced by the vertical Bridgman technique, wherein the thickness of a melt layer containing the melt in a crucible is at least 30 mm.

    Fabrication of a scintillator material of elpasolite type
    3.
    发明授权
    Fabrication of a scintillator material of elpasolite type 有权

    公开(公告)号：US10180503B2

    公开(公告)日：2019-01-15

    申请号：US15960061

    申请日：2018-04-23

    申请人： Saint-Gobain Cristaux Et Detecteurs

    发明人： Vladimir Ouspenski ,  Samuel Blahuta ,  Raphaël Huchet ,  Julien Lejay

    IPC分类号： H05B33/00 ,  G01T1/202 ,  C30B11/00 ,  C30B15/00 ,  C30B29/12 ,  C09K11/77 ,  C30B11/02 ,  C30B11/04 ,  C30B15/04

    摘要： The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.

    Method of producing GaAs single crystal and GaAs single crystal wafer
    4.
    发明授权
    Method of producing GaAs single crystal and GaAs single crystal wafer 有权
    制造GaAs单晶和GaAs单晶晶片的方法

    公开(公告)号：US09469916B2

    公开(公告)日：2016-10-18

    申请号：US14122042

    申请日：2012-05-16

    申请人： Ryoichi Nakamura ,  Motoichi Murakami ,  Takehiro Miyaji

    发明人： Ryoichi Nakamura ,  Motoichi Murakami ,  Takehiro Miyaji

    IPC分类号： C30B11/04 ,  C30B11/00 ,  C30B27/00 ,  C30B29/42

    CPC分类号： C30B11/006 ,  C30B11/00 ,  C30B27/00 ,  C30B29/42

    摘要： A method of producing a GaAs single crystal having high carrier concentration and high crystallinity and to provide a GaAs single crystal wafer using such a GaAs single crystal. In the method of producing a GaAs single crystal, a vertical boat method is performed with a crucible receiving a seed crystal, a Si material, a GaAs material serving as an impurity, solid silicon dioxide, and a boron oxide material, thereby growing a GaAs single crystal.

    摘要翻译： 一种制造具有高载流子浓度和高结晶度的GaAs单晶的方法，并且使用这种GaAs单晶来提供GaAs单晶晶片。 在制造GaAs单晶的方法中，使用接收晶种的坩埚，Si材料，作为杂质的GaAs材料，固体二氧化硅和氧化硼材料进行垂直舟形法，由此生长GaAs 单晶。

    Fluorite
    5.
    发明授权
    Fluorite 有权
    萤石

    公开(公告)号：US09448330B2

    公开(公告)日：2016-09-20

    申请号：US14073900

    申请日：2013-11-07

    申请人： Nihon Kessho Kogaku Co., Ltd.

    发明人： Takafumi Yamazaki ,  Yusuke Shiro

    IPC分类号： G02B1/02 ,  C30B29/12 ,  G03F7/20 ,  C01F11/22 ,  G03F1/60 ,  C30B11/04

    CPC分类号： G02B1/02 ,  C01F11/22 ,  C30B11/04 ,  C30B29/12 ,  G03F1/60 ,  G03F7/70958 ,  Y10T428/24355

    摘要： A fluorite having all the more excellent laser durability compared to a conventional fluorite is provided. A fluorite is proposed, in which the standard deviation of the surface areas of the Voronoi regions in a diagram from a Voronoi decomposition of the distribution of etch-pits in the (111) plane is 6,000 μm2 or less, or, in which the standard deviation of the distances of the Delaunay edges in a diagram from a Delaunay decomposition of the distribution of etch-pits of the (111) plane is 80 μm or less.

    摘要翻译： 提供了与常规萤石相比具有更好的激光耐久性的萤石。 提出了一种萤石，其中从（111）面中蚀刻凹坑分布的Voronoi分解图中的Voronoi区域的表面积的标准偏差为6,000μm2以下，或者其中标准 图中的Delaunay边缘的距离与（111）面的蚀刻坑分布的Delaunay分解的偏差为80μm以下。