公开(公告)号：US20240287706A1

公开(公告)日：2024-08-29

申请号：US18568957

申请日：2022-05-02

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Hitoshi SUMIYA ,  Jin Hwa LEE ,  Minori TERAMOTO

IPC分类号： C30B29/04 ,  C30B9/10 ,  C30B33/02 ,  C30B33/04

CPC分类号： C30B29/04 ,  C30B9/10 ,  C30B33/02 ,  C30B33/04

摘要： A synthetic single crystal diamond that includes nitrogen atoms at a concentration of 50 ppm or more and 1200 ppm or less in terms of number of atoms, wherein an infrared absorption spectrum of the synthetic single crystal diamond has an absorption signal within a wavenumber range of 1460 cm−1 or more and 1470 cm−1 or less.

公开(公告)号：US10032958B2

公开(公告)日：2018-07-24

申请号：US14742798

申请日：2015-06-18

申请人： NGK INSULATORS, LTD.

发明人： Shuuhei Higashihara ,  Makoto Iwai

IPC分类号： H01L33/00 ,  H01L33/32 ,  C30B19/12 ,  H01L33/20 ,  H01L21/02 ,  C30B9/10 ,  C30B19/02 ,  C30B29/40 ,  H01L33/16 ,  H01L33/12

CPC分类号： H01L33/32 ,  C30B9/10 ,  C30B19/02 ,  C30B19/12 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20

摘要： A seed crystal substrate 8 includes a base body 1 and a plurality of rows of stripe-shaped seed crystal layers 3 formed on the base body 1. An upper face 3a of the seed crystal layer 3 is (11-22) plane, a groove 4 is formed between the adjacent seed crystal layers 3, and a longitudinal direction of the groove 4 is a direction in which a c-axis of a crystal forming the seed crystal layer is projected on the upper face. A nitride of a group 13 element is formed on the seed crystal substrate.

公开(公告)号：US09951439B2

公开(公告)日：2018-04-24

申请号：US14559362

申请日：2014-12-03

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Naofumi Shinya ,  Yu Hamaguchi ,  Norio Yamagata ,  Takehisa Minowa

IPC分类号： C30B13/02 ,  C30B17/00 ,  C30B29/36 ,  C30B13/14 ,  C30B15/02 ,  C30B15/20 ,  C30B11/08 ,  C30B15/10 ,  C30B19/04 ,  C30B9/10

CPC分类号： C30B13/02 ,  C30B9/10 ,  C30B11/08 ,  C30B13/14 ,  C30B15/02 ,  C30B15/10 ,  C30B15/206 ,  C30B17/00 ,  C30B19/04 ,  C30B29/36

摘要： In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. A metal element M (M is at least one metal element selected from at least one of a first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, a second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu and a third group consisting of Al, Ga, Ge, Sn, Pb and Zn) is added to the Si—C solution and the crucible is heated to elute Si and C, which are derived from a main component SiC of the crucible, from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution. In this way, precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution is suppressed.

公开(公告)号：US09903042B2

公开(公告)日：2018-02-27

申请号：US14958826

申请日：2015-12-03

申请人： TOYODA GOSEI CO., LTD.

发明人： Masateru Yamazaki ,  Miki Moriyama

IPC分类号： C30B9/10 ,  C30B29/40

CPC分类号： C30B9/10 ,  C30B29/406

摘要： An object of the present invention is to suppress macro step growth in the growth of GaN crystal through a flux method. As a crucible for holding a melt when growing a GaN crystal through the Na flux method, the crucible is made of alumina and produced by plaster mold casting. The crucible is used, in which there are alumina grains abnormally grown on the inner walls thereof, and the maximum grain size of the abnormally grown alumina grains is not less than 10 μm. When such a crucible is selected and used, the macro step growth can be suppressed, thereby improving the GaN crystal quality.

公开(公告)号：US09824892B2

公开(公告)日：2017-11-21

申请号：US13812089

申请日：2012-05-17

申请人： Adrian Kitai ,  Haoling Yu ,  Bo Li

发明人： Adrian Kitai ,  Haoling Yu ,  Bo Li

IPC分类号： H01L21/02 ,  H01L29/06 ,  C30B9/10 ,  C30B19/12 ,  C30B29/06

CPC分类号： H01L21/02634 ,  C30B9/10 ,  C30B19/12 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02645 ,  H01L21/02658 ,  H01L29/0657

摘要： A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.

公开(公告)号：US09777405B2

公开(公告)日：2017-10-03

申请号：US14674567

申请日：2015-03-31

申请人： The Florida State University Research Foundation, Inc.

发明人： Jeffrey Whalen ,  Theo Siegrist

IPC分类号： C30B29/46 ,  H01B1/10 ,  C30B9/10 ,  H01B1/08 ,  C30B9/12 ,  C30B29/22

CPC分类号： C30B29/46 ,  C30B9/10 ,  C30B9/12 ,  C30B29/22 ,  H01B1/08 ,  H01B1/10

摘要： Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.

公开(公告)号：US09653649B2

公开(公告)日：2017-05-16

申请号：US14923598

申请日：2015-10-27

申请人： NGK INSULATORS, LTD.

发明人： Makoto Iwai ,  Masahiro Sakai ,  Katsuhiro Imai ,  Yoshitaka Kuraoka

IPC分类号： H01L33/00 ,  C30B25/00 ,  H01L33/32 ,  C30B9/10 ,  C30B19/02 ,  C30B29/40 ,  H01L33/20 ,  C30B25/02 ,  H01L33/02

CPC分类号： H01L33/32 ,  C30B9/10 ,  C30B19/02 ,  C30B25/02 ,  C30B29/406 ,  H01L33/02 ,  H01L33/20

摘要： The maximum value of peak intensities of cathode luminescence of a wavelength corresponding to a band gap of gallium nitride and in a measured visual field of 0.1 mm×0.1 mm is 140 percent or higher of an average value of the peak intensities of the cathode luminescence, provided that the peak intensities of the cathode luminescence are measured on a surface of the gallium nitride substrate.

公开(公告)号：US20170081780A1

公开(公告)日：2017-03-23

申请号：US15365316

申请日：2016-11-30

申请人： Toyoda Gosei Co., Ltd.

发明人： Seiji NAGAI ,  Miki MORIYAMA ,  Shohei KUMEGAWA ,  Shiro YAMAZAKI

IPC分类号： C30B19/12 ,  H01L21/78 ,  C30B29/40 ,  H01L21/02 ,  C30B9/06 ,  C30B19/04

CPC分类号： C30B19/12 ,  C30B9/06 ,  C30B9/10 ,  C30B19/02 ,  C30B19/04 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/7806

摘要： A method for producing a Group III nitride semiconductor single crystal, includes forming a mask layer on an underlayer, to thereby form a seed crystal in which a portion of the underlayer is covered with the mask layer and in which the remaining portion of the underlayer is not covered with the mask layer, etching the remaining portion, and growing a Group III nitride semiconductor single crystal on the seed crystal.

公开(公告)号：US09464367B2

公开(公告)日：2016-10-11

申请号：US14474924

申请日：2014-09-02

申请人： Hirokazu Iwata

发明人： Hirokazu Iwata

IPC分类号： C30B29/40 ,  C30B9/10 ,  H01B1/06 ,  C30B9/00 ,  C30B29/38 ,  C01B21/06

CPC分类号： C30B29/406 ,  C01B21/0632 ,  C30B9/00 ,  C30B9/10 ,  C30B19/02 ,  C30B19/12 ,  C30B29/38 ,  C30B29/403 ,  H01B1/06 ,  H01L33/0075 ,  Y10T117/1068

摘要： A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.

摘要翻译： 制造n型III族氮化物单晶的方法包括将至少包含III族元素，碱金属和氧化硼的物质的原料放入反应容器中; 通过将反应容器加热至氧化硼的熔点来熔化氧化硼; 通过将反应容器加热至III族氮化物的晶体生长温度，在反应容器中形成包含III族元素，碱金属和氧化硼的混合熔体; 通过使含氮气体与混合熔体接触将氮气混合到混合熔体中; 并且从溶解在混合熔体中的氧化硼中的III族元素，氮和氧生长出掺杂有氧作为供体的n型III族氮化物单晶。

公开(公告)号：US20160244892A1

公开(公告)日：2016-08-25

申请号：US15042875

申请日：2016-02-12

申请人： TOKYO ELECTRON LIMITED

发明人： Kazuya TAKAHASHI ,  Mitsuhiro OKADA ,  Katsuhiko KOMORI ,  Hiromasa YONEKURA

IPC分类号： C30B29/06 ,  H01L21/67 ,  C30B29/08 ,  C30B9/10 ,  C30B33/08 ,  H01L21/02 ,  C30B19/02

CPC分类号： C30B29/06 ,  C30B9/10 ,  C30B29/08 ,  C30B33/08 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02672 ,  H01L21/67109

摘要： A method for crystallizing a group IV semiconductor to form group IV semiconductor crystals on a process surface of a workpiece on which a process is performed, includes forming an additive-containing group IV semiconductor film on the process surface of the workpiece by supplying a group IV semiconductor precursor gas serving as a precursor of the group IV semiconductor and an additive gas which lowers a melting point of the group IV semiconductor and which includes an additive whose segregation coefficient is smaller than “1”, liquefying the additive-containing group IV semiconductor film, and solidifying the liquefied additive-containing group IV semiconductor film from the side of the process surface of the workpiece to form the group IV semiconductor crystals.

摘要翻译： 一种用于使IV族半导体结晶以在其上进行工艺的工件的工艺表面上形成IV族半导体晶体的方法包括在工件的工艺表面上形成含添加剂的IV族半导体膜， 用作IV族半导体的前体的半导体前体气体和降低IV族半导体的熔点的添加气体，其包含偏析系数小于“1”的添加剂，液化含添加剂的IV族半导体膜 并从工件的工艺表面侧固化含有液化添加剂的IV族半导体膜，形成IV族半导体晶体。