- 专利标题： Semiconductor formation by lateral diffusion liquid phase epitaxy
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申请号： US13812089申请日： 2012-05-17
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公开(公告)号： US09824892B2公开(公告)日： 2017-11-21
- 发明人: Adrian Kitai , Haoling Yu , Bo Li
- 申请人： Adrian Kitai , Haoling Yu , Bo Li
- 申请人地址： CA Hamilton, Ontario
- 专利权人： McMaster University
- 当前专利权人： McMaster University
- 当前专利权人地址： CA Hamilton, Ontario
- 代理机构： Pepper Hamilton LLP
- 国际申请： PCT/CA2012/050327 WO 20120517
- 国际公布： WO2012/155273 WO 20121122
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/06 ; C30B9/10 ; C30B19/12 ; C30B29/06
摘要：
A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.
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