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    Method for Crystallizing Group IV Semiconductor, and Film Forming Apparatus
    1.
    发明申请
    Method for Crystallizing Group IV Semiconductor, and Film Forming Apparatus 审中-公开
    结晶IV族半导体的方法和成膜装置

    公开(公告)号：US20160244892A1

    公开(公告)日：2016-08-25

    申请号：US15042875

    申请日：2016-02-12

    申请人： TOKYO ELECTRON LIMITED

    发明人： Kazuya TAKAHASHI ,  Mitsuhiro OKADA ,  Katsuhiko KOMORI ,  Hiromasa YONEKURA

    IPC分类号： C30B29/06 ,  H01L21/67 ,  C30B29/08 ,  C30B9/10 ,  C30B33/08 ,  H01L21/02 ,  C30B19/02

    CPC分类号： C30B29/06 ,  C30B9/10 ,  C30B29/08 ,  C30B33/08 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02672 ,  H01L21/67109

    摘要： A method for crystallizing a group IV semiconductor to form group IV semiconductor crystals on a process surface of a workpiece on which a process is performed, includes forming an additive-containing group IV semiconductor film on the process surface of the workpiece by supplying a group IV semiconductor precursor gas serving as a precursor of the group IV semiconductor and an additive gas which lowers a melting point of the group IV semiconductor and which includes an additive whose segregation coefficient is smaller than “1”, liquefying the additive-containing group IV semiconductor film, and solidifying the liquefied additive-containing group IV semiconductor film from the side of the process surface of the workpiece to form the group IV semiconductor crystals.

    摘要翻译： 一种用于使IV族半导体结晶以在其上进行工艺的工件的工艺表面上形成IV族半导体晶体的方法包括在工件的工艺表面上形成含添加剂的IV族半导体膜， 用作IV族半导体的前体的半导体前体气体和降低IV族半导体的熔点的添加气体，其包含偏析系数小于“1”的添加剂，液化含添加剂的IV族半导体膜 并从工件的工艺表面侧固化含有液化添加剂的IV族半导体膜，形成IV族半导体晶体。

    IMPURITY DIFFUSION METHOD, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    4.
    发明申请
    IMPURITY DIFFUSION METHOD, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    强化扩散方法，基板加工装置及制造半导体器件的方法

    公开(公告)号：US20130288470A1

    公开(公告)日：2013-10-31

    申请号：US13871297

    申请日：2013-04-26

    申请人： TOKYO ELECTRON LIMITED

    发明人： Kazuya TAKAHASHI ,  Yoshikazu FURUSAWA ,  Mitsuhiro OKADA

    IPC分类号： H01L21/223

    CPC分类号： H01L21/2236 ,  H01L21/28035

    摘要： The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation 1); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation 3); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation 4), wherein in the operation 4, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.

    摘要翻译： 杂质扩散方法包括：将形成有薄膜的物体转印到处理室中（操作1）; 将物体的温度升高到处理室中的蒸气扩散温度（操作3）; 并将含有杂质的含杂质的气体与惰性气体一起供给到处理室中，并将形成在温度升高对象物上的薄膜中的杂质扩散到蒸气扩散温度（操作4），其中 在操作4中，用于加速杂质扩散到薄膜中的杂质扩散加速气体与含杂质气体和惰性气体一起被供应到处理室中。

    METHOD OF VAPOR-DIFFUSING IMPURITIES
    6.
    发明申请
    METHOD OF VAPOR-DIFFUSING IMPURITIES 有权
    蒸汽渗透方法

    公开(公告)号：US20140030879A1

    公开(公告)日：2014-01-30

    申请号：US13954472

    申请日：2013-07-30

    申请人： Tokyo Electron Limited

    发明人： Kazuya TAKAHASHI ,  Yoshikazu FURUSAWA ,  Mitsuhiro OKADA

    IPC分类号： H01L21/22

    CPC分类号： H01L21/22 ,  H01L21/223 ,  H01L21/67109

    摘要： A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.

    摘要翻译： 提供了使用虚设基板将杂质气相扩散到待加工对象基板的扩散区域的方法。 该方法包括将目标衬底和虚拟衬底加载到衬底装载夹具中，将装载有目标衬底和虚设衬底的衬底装载夹具容纳在处理装置的处理室中，并将杂质蒸发扩散到 处理室中的目标衬底具有容纳衬底加载夹具。 蒸气扩散的杂质是硼，虚拟衬底的外表面包括具有不允许硼吸附的特性的材料。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220384473A1

    公开(公告)日：2022-12-01

    申请号：US17331813

    申请日：2021-05-27

    申请人： Tokyo Electron Limited

    发明人： Sara OTSUKI ,  Genji NAKAMURA ,  Muneyuki OTANI ,  Kazuya TAKAHASHI

    IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L21/02

    摘要： A method of manufacturing a semiconductor device according to the present disclosure includes forming a stack by alternately stacking insulating films and sacrificial films on a substrate; forming, in the stack, a through-hole extending in a thickness direction of the stack; forming a block insulating film, a charge trapping film, a tunnel insulating film, and a channel film on an inner surface of the through-hole in this order; forming, in the stack, a slit extending in the thickness direction of the stack separately from the through-hole; removing the sacrificial films through the slit so as to form a recess between adjacent insulating films; forming a first metal oxide film on an inner surface of the recess; forming, on the first metal oxide film, a second metal oxide film having a crystallization temperature lower than that of the first metal oxide film; and filling the recess with an electrode layer.

    Silicon Film Forming Method, Thin Film Forming Method and Cross-Sectional Shape Control Method
    9.
    发明申请
    Silicon Film Forming Method, Thin Film Forming Method and Cross-Sectional Shape Control Method 有权
    硅膜成型方法，薄膜成型方法和横截面形状控制方法

    公开(公告)号：US20150037970A1

    公开(公告)日：2015-02-05

    申请号：US14447060

    申请日：2014-07-30

    申请人： TOKYO ELECTRON LIMITED

    发明人： Kazuhide HASEBE ,  Kazuya TAKAHASHI ,  Katsuhiko KOMORI ,  Yoshikazu FURUSAWA ,  Mitsuhiro OKADA ,  Hiroyuki HAYASHI ,  Akinobu KAKIMOTO

    IPC分类号： H01L21/768 ,  H01L21/285

    CPC分类号： C23C16/045 ,  C23C16/24 ,  H01L21/28556 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

    摘要： The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

    摘要翻译： 本公开内容提供了一种用于在具有加工表面的工件上形成硅膜的硅膜形成方法，包括：通过将分子式中含有两个或更多个硅原子的高级氨基硅烷系气体供给到 并且通过使硅吸附在处理过的表面上; 以及通过将不含有氨基的硅烷类气体供给到种子层上并通过在种子层上沉积硅而形成硅膜，其中，当形成种子层时，将处理温度设定在350℃的范围内 或更低，室温以上。