公开(公告)号：US20240278966A1

公开(公告)日：2024-08-22

申请号：US18645060

申请日：2024-04-24

Applicant: TOPPAN HOLDINGS INC.

Inventor： Sayaka HOSHI

IPC: B65D65/42 ,  C09D7/61 ,  C09D133/02 ,  C23C16/02 ,  C23C16/40

CPC classification number: B65D65/42 ,  C09D7/61 ,  C09D133/02 ,  C23C16/02 ,  C23C16/403 ,  B65D2565/387

Abstract: A gas barrier laminate includes a substrate, an inorganic vapor deposition layer containing an inorganic oxide, and a coating layer, which are laminated in this order, the coating layer being composed of a single layer or a plurality of layers. The coating layer contains a carboxy group-containing polymer, and at least one type of polyvalent metal-containing particles, a total X-ray fluorescence intensity of metal elements contained in the polyvalent metal-containing particles is 3.0 kcps or greater and 8.0 kcps or less, and an absorbance X of the gas barrier laminate 10 obtained by subtracting an absorbance X2 at a wavelength of 500 nm from an absorbance X1 at a wavelength of 350 nm measured with an ultraviolet-visible spectrophotometer after hot water treatment at 130° C. for 30 minutes using a 0.3 mass % L-cysteine aqueous solution satisfies the following formula: X=X1−X2≥0.02 (abs).

公开(公告)号：US11851378B2

公开(公告)日：2023-12-26

申请号：US17375557

申请日：2021-07-14

Applicant: Raytheon Technologies Corporation

Inventor： Brendan M. Lenz ,  Sarah A. Frith ,  Daniel L. Becerra ,  Olivier H. Sudre

IPC: C04B35/80 ,  B28B23/00 ,  C04B35/628 ,  C04B35/634 ,  C23C16/02 ,  D03D3/00 ,  D06N3/00 ,  D06M10/10

CPC classification number: C04B35/80 ,  B28B23/0006 ,  C04B35/62863 ,  C04B35/62884 ,  C04B35/6342 ,  C04B35/63416 ,  C23C16/02 ,  D03D3/005 ,  D06N3/0006 ,  D06N3/0015 ,  C04B2235/3826 ,  C04B2235/5244 ,  C04B2235/5256 ,  C04B2235/614 ,  D06M10/10

Abstract: A method of preparing a woven fabric material for use in a ceramic matrix composite includes passing a desized woven fabric tape having a first inter-filament spacing through a dispersal module configured to transform the desized woven fabric tape into a dispersed woven fabric tape having a second inter-filament spacing greater than the first inter-filament spacing. The dispersal module includes a first charging element with a charged surface and disposed to apply an electric charge to the desized woven fabric tape. The method further includes applying a polymer binder to the dispersed woven fabric tape to create a stabilized woven fabric tape having the second inter-filament spacing.

公开(公告)号：US11846018B2

公开(公告)日：2023-12-19

申请号：US17665871

申请日：2022-02-07

Applicant: MacDermid Enthone Inc.

Inventor： Richard W. Hurtubise ,  Eric Yakobson ,  Shaopeng Sun ,  Taylor L. Wilkins ,  Elie H. Najjar ,  Wenbo Shao

IPC: C23C14/02 ,  C23C16/02 ,  C25D3/00 ,  C23C16/40 ,  C23C14/08

CPC classification number: C23C16/403 ,  C23C14/02 ,  C23C14/081 ,  C23C16/02 ,  C25D3/00

Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

公开(公告)号：US11746418B2

公开(公告)日：2023-09-05

申请号：US16674195

申请日：2019-11-05

Applicant: Moxtek, Inc.

Inventor： Matthew R. Linford ,  Brian Johnson ,  Anubhav Diwan

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/48 ,  C23C16/56 ,  G02B5/30 ,  C23C16/50 ,  C23C16/448 ,  C23C16/02

CPC classification number: C23C16/45548 ,  C23C16/02 ,  C23C16/402 ,  C23C16/4485 ,  C23C16/48 ,  C23C16/50 ,  C23C16/56 ,  G02B5/3025

Abstract: Thick, inorganic coatings can be deposited on a polarizer by chemical vapor deposition. In one embodiment, the method can comprise activating a surface of the polarizer with an oxygen plasma in an oven; injecting a solution including tetrakis(dimethylamino)silane dissolved in cyclohexane and water into the oven; and vapor depositing silicon dioxide onto the polarizer. These three steps can be repeated multiple times until desired thickness is attained.

公开(公告)号：US11713248B2

公开(公告)日：2023-08-01

申请号：US17138194

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok Lee ,  Changhyun Kim ,  Kyung-Eun Byun ,  Keunwook Shin ,  Hyeonjin Shin ,  Eunkyu Lee

IPC: C23C16/26 ,  C01B32/186 ,  C01B32/194 ,  C23C16/513 ,  C23C16/04 ,  C23C16/02

CPC classification number: C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

Abstract: A method of selectively growing graphene includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

公开(公告)号：US11680312B2

公开(公告)日：2023-06-20

申请号：US17850022

申请日：2022-06-27

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Seshadri Ganguli ,  Xi Cen

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/02 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45534 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L1(L2)y, wherein M is a metal, L1 is an aromatic ligand, L2 is an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the L2 comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

公开(公告)号：US20190189422A1

公开(公告)日：2019-06-20

申请号：US16270099

申请日：2019-02-07

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Yoshinobu NAKAMURA ,  Kiyohiko MAEDA ,  Yoshiro HIROSE ,  Ryota HORIIKE ,  Yoshitomo HASHIMOTO

IPC: H01L21/02 ,  C23C16/02 ,  H01L21/306 ,  H01L21/308 ,  C23C16/56 ,  C23C16/52 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/02 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02247 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

公开(公告)号：US20180355465A1

公开(公告)日：2018-12-13

申请号：US15781242

申请日：2016-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Toshiki HINATA ,  Kazuya DOBASHI ,  Kyoko IKEDA ,  Shuji MORIYA

IPC: C23C14/02 ,  C23C16/02 ,  H01L21/304 ,  C23C14/56 ,  C23C14/50 ,  H01L21/687 ,  H01L21/02

CPC classification number: C23C14/022 ,  C23C14/02 ,  C23C14/505 ,  C23C14/564 ,  C23C16/02 ,  H01L21/02041 ,  H01L21/302 ,  H01L21/304 ,  H01L21/68714

Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

公开(公告)号：US20180198006A1

公开(公告)日：2018-07-12

申请号：US15668164

申请日：2017-08-03

Applicant: NANOCLEAR TECHNOLOGIES INC.

Inventor： Harold Frank GREER ,  Scott S. HARRIED ,  Ryan Morrow BRIGGS ,  Tony LEE

IPC: H01L31/0236 ,  H01L31/0216 ,  B05D1/12

CPC classification number: H01L31/02363 ,  B05D1/12 ,  C23C16/02 ,  C23C16/04 ,  H01L31/02168

Abstract: The physical and chemical properties of surfaces can be controlled by bonding nanoparticles, microspheres, or nanotextures to the surface via inorganic precursors. Surfaces can acquire a variety of desirable properties such as antireflection or reflection, antifogging, antifrosting, UV blocking, and IR absorption, while maintaining transparency to visible light. Micro or nanomaterials can also be used as etching masks to texture a surface and control its physical and chemical properties via its micro or nanotexture.

公开(公告)号：US20180194686A1

公开(公告)日：2018-07-12

申请号：US15738727

申请日：2016-06-21

Applicant: SAFRAN CERAMICS

Inventor： Sylvie LOISON ,  Chrystel HUGUET ,  Adrien DELCAMP ,  Emilien BUET

IPC: C04B35/565 ,  C04B35/626 ,  C04B35/628 ,  C04B35/80 ,  C04B41/45 ,  C04B41/53 ,  D06M11/79 ,  B29B15/08 ,  B29B11/14

CPC classification number: C04B35/565 ,  B29B11/14 ,  B29B11/16 ,  B29B15/08 ,  B29L2031/082 ,  C04B35/573 ,  C04B35/6265 ,  C04B35/62849 ,  C04B35/62868 ,  C04B35/62873 ,  C04B35/62884 ,  C04B35/62894 ,  C04B35/62897 ,  C04B35/806 ,  C04B41/4558 ,  C04B41/5353 ,  C04B2235/5244 ,  C23C16/02 ,  C23C16/26 ,  D06M11/79

Abstract: A method of treating at least one silicon carbide fiber, the method including a) putting at least one silicon carbide fiber presenting an oxygen content that is less than or equal to 1% in atomic percentage into contact with an oxidizing medium in order to transform the surface of the fiber chemically and form a surface layer of silica; b) eliminating the resulting silica layer by putting the fiber obtained after performing step a) into contact with an acid liquid medium comprising at least hydrofluoric acid; and c) depositing an interphase layer on the surface of the fiber obtained after performing step b).